X-On Electronics has gained recognition as a prominent supplier of IRFB3004GPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFB3004GPBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRFB3004GPBF Infineon

IRFB3004GPBF electronic component of Infineon
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Part No.IRFB3004GPBF
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET MOSFT 40V 195A 1.7 mOhm 160nC
Datasheet: IRFB3004GPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 4.0679
10 : USD 2.3423
100 : USD 2.2176
250 : USD 2.0721
500 : USD 1.9889
1000 : USD 1.9263
2500 : USD 1.9263
5000 : USD 1.9263
10000 : USD 1.8737
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Vgs - Gate-Source Voltage
Qg - Gate Charge
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the IRFB3004GPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFB3004GPBF and other electronic components in the MOSFETs category and beyond.

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IRFB3004GPbF HEXFET Power MOSFET Applications D High Efficiency Synchronous Rectification in SMPS V 40V DSS Uninterruptible Power Supply R typ. 1.4m DS(on) High Speed Power Switching Hard Switched and High Frequency Circuits max. 1.75m G I 340A D (Silicon Limited) Benefits I 195A S D (Package Limited) Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche D SOA Enhanced body diode dV/dt and dI/dt Capability S Lead-Free D G Halogen-Free TO-220AB IRFB3004GPbF GD S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 340 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 240 D C GS A I T = 25C Continuous Drain Current, V 10V (Wire Bond Limited) 195 D C GS I Pulsed Drain Current 1310 DM P T = 25C 380 W D C Maximum Power Dissipation Linear Derating Factor 2.5 W/C V Gate-to-Source Voltage 20 V GS 4.4 dv/dt Peak Diode Recovery V/ns T Operating Junction and -55 to + 175 J T C Storage Temperature Range STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 10lbf in (1.1N m) Mounting torque, 6-32 or M3 screw Avalanche Characteristics Single Pulse Avalanche Energy E 300 mJ AS (Thermally limited) Avalanche Current I See Fig. 14, 15, 22a, 22b A AR Repetitive Avalanche Energy E mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 0.40 JC R 0.50 C/W CS Case-to-Sink, Flat Greased Surface, TO-220 R Junction-to-Ambient, TO-220 62 JA www.irf.com 1 06/29/09 Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.037 V/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 1.4 1.75 V = 10V, I = 195A DS(on) m GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D I Drain-to-Source Leakage Current 20 A V = 40V, V = 0V DSS DS GS 250 V = 40V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 2.2 G Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 1170 S V = 10V, I = 195A DS D Q Total Gate Charge 160 240 nC I = 187A g D Q Gate-to-Source Charge 40 V =20V gs DS Q Gate-to-Drain Mille) Charge 68 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q ) 92 I = 187A, V =0V, V = 10V sync g gd D DS GS t Turn-On Delay Time 23 ns V = 26V d(on) DD t Rise Time 220 I = 195A r D t Turn-Off Delay Time 90 R = 2.7 d(off) G t f Fall Time 130 V = 10V GS C Input Capacitance 9200 pF V = 0V iss GS C Output Capacitance 2020 V = 25V oss DS C Reverse Transfer Capacitance 1340 = 1.0 MHz, See Fig. 5 rss C eff. (ER) 2440 V = 0V, V = 0V to 32V , See Fig. 11 Effective Output Capacitance (Energy Related) oss GS DS C eff. (TR) 2690 V = 0V, V = 0V to 32V oss Effective Output Capacitance (Time Related) GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I D Continuous Source Current A MOSFET symbol S 340 (Body Diode) showing the G I Pulsed Source Current 1310 A integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 195A, V = 0V SD J S GS t T = 25C V = 34V, Reverse Recovery Time 27 ns rr J R 31 T = 125C I = 195A J F di/dt = 100A/s Q T = 25C Reverse Recovery Charge 18 nC rr J T = 125C 41 J I T = 25C Reverse Recovery Current 1.2 A RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Calculated continuous current based on maximum allowable junction I 195A, di/dt 930A/s, V V , T 175C. SD DD (BR)DSS J temperature. Bond wire current limit is 195A. Note that current Pulse width 400s duty cycle 2%. limitations arising from heating of the device leads may occur with C eff. (TR) is a fixed capacitance that gives the same charging time oss some lead mounting arrangements. as C while V is rising from 0 to 80% V . oss DS DSS Repetitive rating pulse width limited by max. junction C eff. (ER) is a fixed capacitance that gives the same energy as oss temperature. C while V is rising from 0 to 80% V . oss DS DSS Limited by T , starting T = 25C, L = 0.016mH Jmax J R = 25, I = 195A, V =10V. Part not recommended for use GS JC G AS above this value . 2 www.irf.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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