X-On Electronics has gained recognition as a prominent supplier of IRFB3407ZPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFB3407ZPBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRFB3407ZPBF Infineon

Hot IRFB3407ZPBF electronic component of Infineon
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See Product Specifications
Part No.IRFB3407ZPBF
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET TRENCH MOSFET - PACKAGE
Datasheet: IRFB3407ZPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.0932 ea
Line Total: USD 3.09 
Availability - 4
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 3.0932
10 : USD 2.3433
50 : USD 1.8967
100 : USD 1.4465
500 : USD 1.2405
1000 : USD 1.147

811
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 1.727
10 : USD 1.364
100 : USD 1.188
1000 : USD 1.177

27160
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1000
Multiples : 1000
1000 : USD 1.4942

970
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 35
Multiples : 1
35 : USD 1.1618
50 : USD 1.157
100 : USD 1.1522
200 : USD 1.1505
500 : USD 1.1472

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Brand
Factory Pack Quantity :
Configuration
Height
Length
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the IRFB3407ZPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFB3407ZPBF and other electronic components in the MOSFETs category and beyond.

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Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 75 V V = 0V, I = 250 A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.094 V/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 5.0 6.4 V = 10V, I = 75A DS(on) m GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 150 A GS(th) DS GS D R Internal Gate Resistance 0.70 G(int) I Drain-to-Source Leakage Current 20 A V = 75V, V = 0V DSS DS GS 250 V = 75V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 320 S V = 50V, I = 75A DS D Q Total Gate Charge 79 110 I = 75A g D Q Gate-to-Source Charge 19 V = 38V gs DS nC Q Gate-to-Drain Mille) Charge 24 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q ) 55 I = 75A, V =0V, V = 10V sync g gd D DS GS t Turn-On Delay Time 15 V = 49V d(on) DD t Rise Time 64 I = 75A r D ns t Turn-Off Delay Time 38 R = 2.6 d(off) G t Fall Time 65 V = 10V f GS C Input Capacitance 4750 V = 0V iss GS C Output Capacitance 420 V = 50V oss DS C Reverse Transfer Capacitance 190 = 1.0MHz rss pF C eff. (ER) 440 V = 0V, V = 0V to 60V oss Effective Output Capacitance (Energy Related) GS DS C eff. (TR) 410 V = 0V, V = 0V to 60V oss Effective Output Capacitance (Time Related) GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I Continuous Source Current MOSFET symbol D S 120 (Body Diode) showing the A G I Pulsed Source Current 488 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 75A, V = 0V SD J S GS t Reverse Recovery Time 33 50 ns T = 25C V = 64V, rr J R T = 125C I = 75A 39 59 J F di/dt = 100A/ s Q T = 25C Reverse Recovery Charge 42 63 nC rr J T = 125C 56 84 J I Reverse Recovery Current 2.2 A T = 25C RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Calculated continuous current based on maximum allowable junction I 75A, di/dt 1570A/ s, V V , T 175C. SD DD (BR)DSS J temperature. Bond wire current limit is 120A. Note that current Pulse width 400 s duty cycle 2%. limitations arising from heating of the device leads may occur with C eff. (TR) is a fixed capacitance that gives the same charging time oss some lead mounting arrangements. as C while V is rising from 0 to 80% V . oss DS DSS Repetitive rating pulse width limited by max. junction C eff. (ER) is a fixed capacitance that gives the same energy as oss temperature. C while V is rising from 0 to 80% V . oss DS DSS Limited by T , starting T = 25C, L = 0.050mH Jmax J R is measured at T approximately 90C. J R = 25, I = 75A, V =10V. Part not recommended for use GS G AS above this value.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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