Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 75 V V = 0V, I = 250 A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.094 V/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 5.0 6.4 V = 10V, I = 75A DS(on) m GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 150 A GS(th) DS GS D R Internal Gate Resistance 0.70 G(int) I Drain-to-Source Leakage Current 20 A V = 75V, V = 0V DSS DS GS 250 V = 75V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 320 S V = 50V, I = 75A DS D Q Total Gate Charge 79 110 I = 75A g D Q Gate-to-Source Charge 19 V = 38V gs DS nC Q Gate-to-Drain Mille) Charge 24 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q ) 55 I = 75A, V =0V, V = 10V sync g gd D DS GS t Turn-On Delay Time 15 V = 49V d(on) DD t Rise Time 64 I = 75A r D ns t Turn-Off Delay Time 38 R = 2.6 d(off) G t Fall Time 65 V = 10V f GS C Input Capacitance 4750 V = 0V iss GS C Output Capacitance 420 V = 50V oss DS C Reverse Transfer Capacitance 190 = 1.0MHz rss pF C eff. (ER) 440 V = 0V, V = 0V to 60V oss Effective Output Capacitance (Energy Related) GS DS C eff. (TR) 410 V = 0V, V = 0V to 60V oss Effective Output Capacitance (Time Related) GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I Continuous Source Current MOSFET symbol D S 120 (Body Diode) showing the A G I Pulsed Source Current 488 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 75A, V = 0V SD J S GS t Reverse Recovery Time 33 50 ns T = 25C V = 64V, rr J R T = 125C I = 75A 39 59 J F di/dt = 100A/ s Q T = 25C Reverse Recovery Charge 42 63 nC rr J T = 125C 56 84 J I Reverse Recovery Current 2.2 A T = 25C RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Calculated continuous current based on maximum allowable junction I 75A, di/dt 1570A/ s, V V , T 175C. SD DD (BR)DSS J temperature. Bond wire current limit is 120A. Note that current Pulse width 400 s duty cycle 2%. limitations arising from heating of the device leads may occur with C eff. (TR) is a fixed capacitance that gives the same charging time oss some lead mounting arrangements. as C while V is rising from 0 to 80% V . oss DS DSS Repetitive rating pulse width limited by max. junction C eff. (ER) is a fixed capacitance that gives the same energy as oss temperature. C while V is rising from 0 to 80% V . oss DS DSS Limited by T , starting T = 25C, L = 0.050mH Jmax J R is measured at T approximately 90C. J R = 25, I = 75A, V =10V. Part not recommended for use GS G AS above this value.