X-On Electronics has gained recognition as a prominent supplier of IRF9540NSTRRPBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF9540NSTRRPBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF9540NSTRRPBF Infineon

Name: IRF9540NSTRRPBF
Brand: Infineon
SKU: IRF9540NSTRRPBF_Infineon
Availability: InStock
Rating: 5 (11 reviews)

IRF9540NSTRRPBF electronic component of Infineon

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See Product Specifications

Part No.	IRF9540NSTRRPBF
Manufacturer:	Infineon
Category:	MOSFETs
Description:	International Rectifier MOSFET 1 P-CH -100V HEXFET 117mOhms 64.7nC
Datasheet:	IRF9540NSTRRPBF Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 1.7995 ea
Line Total: USD 1.8

Availability - 137
Ship by Fri. 14 Mar to Wed. 19 Mar

MOQ: 1 Multiples: 1
Pack Size: 1

IRF9540NSTRRPBF More Buying Options & Price Grid(s)

Please wait...

Availability Price Buy Price Quantity

137

Ship by Fri. 14 Mar to Wed. 19 Mar

MOQ : 1
Multiples : 1

1 : USD 1.7995
10 : USD 1.5032
30 : USD 1.0341
100 : USD 0.8918
500 : USD 0.7587
800 : USD 0.7306

2328

Ship by Fri. 07 Mar to Thu. 13 Mar

MOQ : 800
Multiples : 800

800 : USD 1.0405
4000 : USD 1.0368
8000 : USD 1.033
12000 : USD 1.0291
20000 : USD 1.0252
24000 : USD 1.0213
100000 : USD 1.0171

776

Ship by Fri. 07 Mar to Thu. 13 Mar

MOQ : 431
Multiples : 1

431 : USD 1.0886
500 : USD 1.0424
1000 : USD 0.9844

Specifications

Manufacturer

Infineon Infineon

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

- 23 A - 23 A

Vds - Drain-Source Breakdown Voltage

- 100 V - 100 V

Rds On - Drain-Source Resistance

117 mOhms 117 mOhms

Transistor Polarity

P - Channel P - Channel

Vgs - Gate-Source Breakdown Voltage

20 V 20 V

Vgs th - Gate-Source Threshold Voltage

- 4 V - 4 V

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 175 C + 175 C

Pd - Power Dissipation

3.8 W 3.8 W

Mounting Style

Smd/Smt Smd/Smt

Package / Case

D - PAK - 3 D - PAK - 3

Packaging

Reel Reel

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

20 V 20 V

Qg - Gate Charge

64.7 nC 64.7 nC

Channel Mode

Enhancement Enhancement

Configuration

Single Single

Brand

Infineon Infineon

Forward Transconductance - Min

5.3 S 5.3 S

Fall Time

51 ns 51 ns

Rise Time

67 ns 67 ns

Factory Pack Quantity :

800 800

Typical Turn-Off Delay Time

51 ns 51 ns

Height

2.3 mm 2.3 mm

Length

6.5 mm 6.5 mm

Transistor Type

1 P - Channel 1 P - Channel

Width

6.22 mm 6.22 mm

Cnhts

8541290000 8541290000

Hts Code

8541290095 8541290095

Mxhts

85412999 85412999

Product Type

Mosfet Mosfet

Subcategory

Mosfets Mosfets

Taric

8541290000 8541290000

Typical Turn-On Delay Time

15 ns 15 ns

Notes:- Show Stocked Products With Similar Attributes.

IRF9540NSTRRPBF Alternative Parts

We are delighted to provide the IRF9540NSTRRPBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF9540NSTRRPBF and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

.The Infineon IRF9540NSTRRPBF is an International Rectifier-branded HEXFET power MOSFET. It is a single N-channel device for use in switching applications. It has a rated drain-source breakdown voltage of 100 volts, and a low on-state resistance of 117 milliohms. It exhibits fast switching characteristics with an average gate to source charge (Qg) of 64.7 nanocoulombs. The device features an integral fast-recovery diode and has an absolute maximum continuous drain current rating of 5.7 amperes. It is RoHS compliant and is housed in a Lead-Free (Pb-Free), RoHS-compliant package.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

CYP may also be referenced as

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CYPRESS SEMI
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Infineon (IRF)
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INFINEON TECH ICs
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INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
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INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
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SP9
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Availability	Price	Buy Price	Quantity
137 Ship by Fri. 14 Mar to Wed. 19 Mar MOQ : 1 Multiples : 1	1 : USD 1.7995 10 : USD 1.5032 30 : USD 1.0341 100 : USD 0.8918 500 : USD 0.7587 800 : USD 0.7306

2328 Ship by Fri. 07 Mar to Thu. 13 Mar MOQ : 800 Multiples : 800	800 : USD 1.0405 4000 : USD 1.0368 8000 : USD 1.033 12000 : USD 1.0291 20000 : USD 1.0252 24000 : USD 1.0213 100000 : USD 1.0171

776 Ship by Fri. 07 Mar to Thu. 13 Mar MOQ : 431 Multiples : 1	431 : USD 1.0886 500 : USD 1.0424 1000 : USD 0.9844

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