IRF9610, SiHF9610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating V (V) - 200 DS P-Channel Available R ()V = - 10 V 3.0 DS(on) GS Fast Switching RoHS* Q (Max.) (nC) 11 g COMPLIANT Ease of Paralleling Q (nC) 7.0 gs Simple Drive Requirements Q (nC) 4.0 gd Lead (Pb)-free Available Configuration Single DESCRIPTION S The Power MOSFETs technology is the key to Vishays TO-220 advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs G design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The TO-220 package is universally preferred for all S commercial-industrial applications at power dissipation D D G levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide P-Channel MOSFET acceptance throughout the industry. ORDERING INFORMATION Package TO-220 IRF9610PbF Lead (Pb)-free SiHF9610-E3 IRF9610 SnPb SiHF9610 ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V - 200 DS V Gate-Source Voltage V 20 GS T = 25 - 1.8 C Continuous Drain Current V at - 10 V I GS D T = 100 - 1.0 A C a Pulsed Drain Current I - 7.0 DM Linear Derating Factor 0.16 W/C Maximum Power Dissipation T = 25 C P 20 W C D Inductive Current, Clamp I - 7.0 A LM c Peak Diode Recovery dV/dt dV/dt - 5.0 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 5). b. Not applicable. c. I - 1.8 A, dI/dt 70 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91080 www.vishay.com S09-0046-Rev. A, 19-Jan-09 1IRF9610, SiHF9610 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Case-to-Sink, Flat, Greased Surface R 0.50 - C/W thCS Maximum Junction-to-Case (Drain) R -6.4 thJC SPECIFICATIONS T = 25 C, unless otherwise noted J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 200 - - DS GS D V V Temperature Coefficient V /T Reference to 25 C, I = - 1 mA - - 0.23 - DS DS J D V/C Gate-Source Threshold Voltage V V = V , I = - 250 A - 2.0 - GS(th) DS GS D - 4.0 V Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = - 200 V, V = 0 V - - - 100 DS GS Zero Gate Voltage Drain Current I A DSS V = - 160 V, V = 0 V, T = 125 C - - DS GS J - 500 b Drain-Source On-State Resistance R V = - 10 V I = -0.90 A -- DS(on) GS D 3.0 b Forward Transconductance g V = - 50 V, I = - 0.90 A 0.90 - - fs DS D S Dynamic Input Capacitance C - 170 - iss V = 0 V, GS Output Capacitance C -5V = - 25 V, 0- pF oss DS f = 1.0 MHz, see fig. 10 Reverse Transfer Capacitance C -15- rss Total Gate Charge Q -- 11 g I = - 3.5 A, V = - 160 V, D DS Gate-Source Charge Q --V = - 10 V 7.0 nC gs GS b see fig. 11 and 18 Gate-Drain Charge Q --4.0 gd Turn-On Delay Time t -8.0 - d(on) Rise Time t -15 - r V = - 100 V, I = - 0.90 A, DD D ns b R = 50 , R = 110 , see fig. 17 G D Turn-Off Delay Time t -10- d(off) Fall Time t -8.0- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal Source Inductance L die contact -7.5 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- - 1.8 S showing the A G integral reverse a Pulsed Diode Forward Current I -- - 7.0 SM p - n junction diode S b Body Diode Voltage V T = 25 C, I = - 1.8 A, V = 0 V -- - 5.8 V SD J S GS Body Diode Reverse Recovery Time t - 240 360 ns rr b T = 25 C, I = - 1.8 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -1.7 2.6 C rr Forward Turn-On Time t on Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 5). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91080 2 S09-0046-Rev. A, 19-Jan-09