PD - 91523A IRF9530NS/L HEXFET Power MOSFET l Advanced Process Technology D l Surface Mount (IRF9530NS) V = -100V DSS l Low-profile through-hole (IRF9530NL) l 175C Operating Temperature R = 0.20 DS(on) l Fast Switching G l P-Channel I = -14A D l Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. 2 The D Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the 2 D Pak TO-262 highest power capability and the lowest possible on- resistance in any existing surface mount package. The 2 D Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF9530NL) is available for low- profile applications. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V -10V -14 D C GS I T = 100C Continuous Drain Current, V -10V -10 A D C GS I Pulsed Drain Current -56 DM P T = 25C Power Dissipation 3.8 W D A P T = 25C Power Dissipation 79 W D C Linear Derating Factor 0.53 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 250 mJ AS I Avalanche Current -8.4 A AR E Repetitive Avalanche Energy 7.9 mJ AR dv/dt Peak Diode Recovery dv/dt -5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 1.9 JC C/W R Junction-to-Ambient ( PCB Mounted,steady-state)** 40 JA 5/13/98IRF9530NS/L Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage -100 V V = 0V, I = -250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient -0.11 V/C Reference to 25C, I = -1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 0.20 V = -10V, I = -8.4A DS(on) GS D V Gate Threshold Voltage -2.0 -4.0 V V = V , I = -250A GS(th) DS GS D g Forward Transconductance 3.2 S V = -50V, I = -8.4A fs DS D -25 V = -100V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS -250 V = -80V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS Q Total Gate Charge 58 I = -8.4A g D Q Gate-to-Source Charge 8.3 nC V = -80V gs DS Q Gate-to-Drain Mille) Charge 32 V = -10V, See Fig. 6 and 13 gd GS t Turn-On Delay Time 15 V = -50V d(on) DD t Rise Time 58 I = -8.4A r D ns t Turn-Off Delay Time 45 R = 9.1 d(off) G t Fall Time 46 R = 6.2, See Fig. 10 f D Between lead, L Internal Source Inductance nH S 7.5 and center of die contact C Input Capacitance 760 V = 0V iss GS C Output Capacitance 260 pF V = -25V oss DS C Reverse Transfer Capacitance 170 = 1.0MHz, See Fig. 5 rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S -14 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM -56 (Body Diode) p-n junction diode. S V Diode Forward Voltage -1.6 V T = 25C, I = -8.4A, V = 0V SD J S GS t Reverse Recovery Time 130 190 ns T = 25C, I = -8.4A rr J F Q Reverse Recovery Charge 650 970 nC di/dt = -100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Notes: Repetitive rating pulse width limited by Pulse width 300s duty cycle 2%. max. junction temperature. ( See fig. 11 ) Uses IRF9530N data and test conditions Starting T = 25C, L =7.0mH J R = 25, I = -8.4A. (See Figure 12) G AS I -8.4A, di/dt -490A/s, V V , SD DD (BR)DSS T 175C J ** When mounted on 1 square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note AN-994.