IRF9510 www.vishay.com Vishay Siliconix Power MOSFET FEATURES S Dynamic dV/dt rating TO-220AB Repetitive avalanche rated Available P-channel Available G 175 C operating temperature Fast switching Ease of paralleling S Simple drive requirements D G D Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 P-Channel MOSFET Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For PRODUCT SUMMARY example, parts with lead (Pb) terminations are not RoHS-compliant. V (V) -100 DS Please see the information / tables in this datasheet for details R ()V = -10 V 1.2 DS(on) GS DESCRIPTION Q max. (nC) 8.7 g Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, Q (nC) 2.2 gs ruggedized device design, low on-resistance and Q (nC) 4.1 gd cost-effectiveness. Configuration Single The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB Lead (Pb)-free IRF9510PbF Lead (Pb)-free and halogen-free IRF9510PbF-BE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V -100 DS V Gate-source voltage V 20 GS T = 25 C -4.0 C Continuous drain current V at 10 V I GS D T = 100 C -2.8 A C a Pulsed drain current I -16 DM Linear derating factor 0.29 W/C b Single pulse avalanche energy E 200 mJ AS a Repetitive avalanche current I -4.0 A AR a Repetitive avalanche energy E 4.3 mJ AR Maximum power dissipation T = 25 C P 43 W C D c Peak diode recovery dV/dt dV/dt -5.5 V/ns Operating junction and storage temperature range T , T -55 to +175 J stg C d Soldering recommendations (peak temperature) For 10 s 300 10 lbf in Mounting torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = -25 V, starting T = 25 C, L = 18 mH, R = 25 , I = -4.0 A (see fig. 12) DD J g AS c. I -4.0 A, dI/dt 75 A/s, V V , T 175 C SD DD DS J d. 1.6 mm from case S21-0852-Rev. C, 16-Aug-2021 Document Number: 91072 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRF9510 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -62 thJA Case-to-sink, flat, greased surface R 0.50 - C/W thCS Maximum junction-to-case (drain) R -3.5 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = -250 A -100 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = -1 mA - - 0.091 - V/C DS DS J D Gate-source threshold voltage V V = V , I = -250 A -2.0 - -4.0 V GS(th) DS GS D Gate-source leakage I V = 20 V - - 100 nA GSS GS V = -100 V, V = 0 V - - -100 DS GS Zero gate voltage drain current I A DSS V = -80 V, V = 0 V, T = 150 C - - -500 DS GS J b Drain-source on-state resistance R V = -10 V I = -2.4 A -- 1.2 DS(on) GS D b Forward transconductance g V = -50 V, I = -2.4 A 1.0 - - S fs DS D Dynamic Input capacitance C - 200 - iss V = 0 V, GS Output capacitance C -9V = -25 V, 4- pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -18- rss Total gate charge Q -- 8.7 g I = -4.0 A, V = -80 V, D DS Gate-source charge Q --V = -10 V 2.2 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --4.1 gd Turn-on delay time t -10 - d(on) Rise time t -27 - r V = -50 V, I = -4.0 A, DD D ns b R = 24 , R = 11 , see fig. 10 Turn-off delay time t -1g D 5- d(off) Fall time t -17- f Gate input resistance R f = 1 MHz, open drain 1.5 - 7.9 g D Between lead, Internal drain inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G die contact Internal source inductance L -7.5 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- -4.0 S showing the A G integral reverse a Pulsed diode forward current I -- -16 SM p - n junction diode S b Body diode voltage V T = 25 C, I = -4.0 A, V = 0 V -- -5.5 V SD J S GS Body diode reverse recovery time t - 82 160 ns rr b T = 25 C, I = -4.0 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q - 0.15 0.30 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S21-0852-Rev. C, 16-Aug-2021 Document Number: 91072 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000