X-On Electronics has gained recognition as a prominent supplier of IRF9510 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRF9510 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRF9510 Vishay

IRF9510 electronic component of Vishay
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Part No.IRF9510
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET RECOMMENDED ALT 844-IRF9510PBF
Datasheet: IRF9510 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 3.5607
10 : USD 2.8671
100 : USD 2.6026
250 : USD 2.3595
500 : USD 2.1092
1000 : USD 1.9531
2000 : USD 1.9531
5000 : USD 1.9192
10000 : USD 1.8515
N/A

Obsolete
   
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RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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We are delighted to provide the IRF9510 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRF9510 and other electronic components in the MOSFETs category and beyond.

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IRF9510 www.vishay.com Vishay Siliconix Power MOSFET FEATURES S Dynamic dV/dt rating TO-220AB Repetitive avalanche rated Available P-channel Available G 175 C operating temperature Fast switching Ease of paralleling S Simple drive requirements D G D Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 P-Channel MOSFET Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For PRODUCT SUMMARY example, parts with lead (Pb) terminations are not RoHS-compliant. V (V) -100 DS Please see the information / tables in this datasheet for details R ()V = -10 V 1.2 DS(on) GS DESCRIPTION Q max. (nC) 8.7 g Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, Q (nC) 2.2 gs ruggedized device design, low on-resistance and Q (nC) 4.1 gd cost-effectiveness. Configuration Single The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB Lead (Pb)-free IRF9510PbF Lead (Pb)-free and halogen-free IRF9510PbF-BE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V -100 DS V Gate-source voltage V 20 GS T = 25 C -4.0 C Continuous drain current V at 10 V I GS D T = 100 C -2.8 A C a Pulsed drain current I -16 DM Linear derating factor 0.29 W/C b Single pulse avalanche energy E 200 mJ AS a Repetitive avalanche current I -4.0 A AR a Repetitive avalanche energy E 4.3 mJ AR Maximum power dissipation T = 25 C P 43 W C D c Peak diode recovery dV/dt dV/dt -5.5 V/ns Operating junction and storage temperature range T , T -55 to +175 J stg C d Soldering recommendations (peak temperature) For 10 s 300 10 lbf in Mounting torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = -25 V, starting T = 25 C, L = 18 mH, R = 25 , I = -4.0 A (see fig. 12) DD J g AS c. I -4.0 A, dI/dt 75 A/s, V V , T 175 C SD DD DS J d. 1.6 mm from case S21-0852-Rev. C, 16-Aug-2021 Document Number: 91072 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRF9510 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -62 thJA Case-to-sink, flat, greased surface R 0.50 - C/W thCS Maximum junction-to-case (drain) R -3.5 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = -250 A -100 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = -1 mA - - 0.091 - V/C DS DS J D Gate-source threshold voltage V V = V , I = -250 A -2.0 - -4.0 V GS(th) DS GS D Gate-source leakage I V = 20 V - - 100 nA GSS GS V = -100 V, V = 0 V - - -100 DS GS Zero gate voltage drain current I A DSS V = -80 V, V = 0 V, T = 150 C - - -500 DS GS J b Drain-source on-state resistance R V = -10 V I = -2.4 A -- 1.2 DS(on) GS D b Forward transconductance g V = -50 V, I = -2.4 A 1.0 - - S fs DS D Dynamic Input capacitance C - 200 - iss V = 0 V, GS Output capacitance C -9V = -25 V, 4- pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -18- rss Total gate charge Q -- 8.7 g I = -4.0 A, V = -80 V, D DS Gate-source charge Q --V = -10 V 2.2 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --4.1 gd Turn-on delay time t -10 - d(on) Rise time t -27 - r V = -50 V, I = -4.0 A, DD D ns b R = 24 , R = 11 , see fig. 10 Turn-off delay time t -1g D 5- d(off) Fall time t -17- f Gate input resistance R f = 1 MHz, open drain 1.5 - 7.9 g D Between lead, Internal drain inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G die contact Internal source inductance L -7.5 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- -4.0 S showing the A G integral reverse a Pulsed diode forward current I -- -16 SM p - n junction diode S b Body diode voltage V T = 25 C, I = -4.0 A, V = 0 V -- -5.5 V SD J S GS Body diode reverse recovery time t - 82 160 ns rr b T = 25 C, I = -4.0 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q - 0.15 0.30 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S21-0852-Rev. C, 16-Aug-2021 Document Number: 91072 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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