SSM3J35CT TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J35CT High-Speed Switching Applications Unit: mm Analog Switch Applications 1.2-V drive Low ON-resistance : Ron = 44 (max) ( VGS = -1.2 V) : Ron = 22 (max) ( VGS = -1.5 V) : Ron = 11 (max) ( VGS = -2.5 V) : Ron = 8 (max) ( VGS = -4.0 V) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drainsource voltage V -20 V DSS Gatesource voltage V 10 V GSS DC I -100 D Drain current mA Pulse I -200 DP Drain power dissipation P (Note 1) 100 mW CST3 D Channel temperature T 150 C ch JEDEC - Storage temperature T 55 to 150 C stg JEITA - Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-1J1B temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 0.75 mg (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board 2 (10 mm 10 mm 1.0 mm, Cu Pad: 100 mm ) Marking (top view) Pin Assignment (top view) Equivalent Circuit (top view) Polarity mark Polarity mark (on the top) 3 1 3 1 S3 2 2 1. Gate 2. Source 3. Drain *Electrodes: on the bottom Start of commercial production 2008-03 1 2015-09-29 SSM3J35CT Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I V = 10 V, V = 0 V 10 A GSS GS DS Drainsource breakdown voltage V I = -0.1 mA, V = 0 V -20 V (BR) DSS D GS Drain cutoff current I V = -20 V, V = 0 V -1 A DSS DS GS Gate threshold voltage V V = -3 V, I = -1 mA -0.4 -1.0 V th DS D Forward transfer admittance Y V = -3 V, I = -50 mA (Note 2) 77 mS fs DS D I = -50 mA, V = -4 V (Note 2) 4.3 8 D GS I = -50 mA, V = -2.5 V (Note 2) 5.6 11 D GS Drainsource ON-resistance R DS (ON) I = -5 mA, V = -1.5 V (Note 2) 8.2 22 D GS I = -2 mA, V = -1.2 V (Note 2) 11 44 D GS Input capacitance C 12.2 iss Reverse transfer capacitance C V = -3 V, V = 0 V, f = 1 MHz 6.5 pF rss DS GS Output capacitance C 10.4 oss Turn-on time ton 175 V = -3 V, I = -50 mA, DD D Switching time ns V = 0 to -2.5 V GS Turn-off time t 251 off Drainsource forward voltage V I = 100 mA, V = 0 V (Note 2) DSF D GS 0.83 V 1.2 Note 2: Pulse test Switching Time Test Circuit (a) Test Circuit (b) VIN 0 V 10% OUT 0 IN 90% 2.5 V 2.5V R L V DS (ON) 90% (c) VOUT 10 s V DD V = -3 V DD 10% V DD Duty 1% t t r f V : t , t < 5 ns IN r f (Z = 50 ) out t t on off Common Source Ta = 25C Usage Considerations Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (1 mA for the SSM3J35CT). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on). Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2015-09-29 50