X-On Electronics has gained recognition as a prominent supplier of SSM3J46CTB(TPL3) MOSFETs across the USA, India, Europe, Australia, and various other global locations. SSM3J46CTB(TPL3) MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SSM3J46CTB(TPL3) Toshiba

SSM3J46CTB(TPL3) electronic component of Toshiba
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Part No.SSM3J46CTB(TPL3)
Manufacturer: Toshiba
Category: MOSFETs
Description: Toshiba MOSFET Small Sig FET 1.5V Low RDS 250mOhm
Datasheet: SSM3J46CTB(TPL3) Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6659 ea
Line Total: USD 0.67 
Availability - 6
Ship by Fri. 22 Nov to Wed. 27 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6
Ship by Fri. 22 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 0.6659
10 : USD 0.5516
30 : USD 0.5019
100 : USD 0.4409
500 : USD 0.4142
1000 : USD 0.397

   
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RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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We are delighted to provide the SSM3J46CTB(TPL3) from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSM3J46CTB(TPL3) and other electronic components in the MOSFETs category and beyond.

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SSM3J46CTB TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS VI) SSM3J46CTB Power Management Switch Applications Unit: mm 1.5 V drive Low ON-resistance: R = 250 m (max) ( V = -1.5 V) DS(ON) GS R = 178 m (max) ( V = -1.8 V) DS(ON) GS RDS(ON) = 133 m (max) ( VGS = -2.5 V) RDS(ON) = 103 m (max) ( VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-Source voltage V -20 V DSS Gate-Source voltage V 8 V GSS DC I -2.0 D Drain current A Pulse I -4.0 DP Power dissipation P (Note 1) 1000 mW D 1. Gate 2. Source Channel temperature T 150 C ch 3. Drain Storage temperature range T 55 to 150 C CST3B stg Note: Using continuously under heavy loads (e.g. the application of high JEDEC temperature/current/voltage and the significant change in JEITA temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. TOSHIBA 2-1T1A operating temperature/current/voltage, etc.) are within the Weight: 1.5 mg (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a FR4 board. 2 (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 645 mm ) Marking (top view) Pin Condition (top view) Equivalent Circuit 3 1 3 2 S V Polarity mark Polarity mark 1. Gate (on the top) 2. Source 1 2 3. Drain *Electrodes: on the bottom Start of commercial production 2010-02 1 2015-11-26 SSM3J46CTB Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Conditions Min Typ. Max Unit V (BR) DSS ID = 1 mA, VGS = 0 V 20 V Drain-Source breakdown voltage V I = 1 mA, V = 5 V (Note 3) 15 V (BR) DSX D GS Drain cut-off current I V = 20 V, V = 0 V 1 A DSS DS GS Gate leakage current I V = 8 V, V = 0 V 1 A GSS GS DS Gate threshold voltage V V = 3 V, I = 1 mA 0.3 1.0 V th DS D Forward transfer admittance Y V = 3 V, I = 1.0 A (Note 2) 5.2 S fs DS D I = -1.5 A, V = 4.5 V (Note 2) 103 D GS 88.5 I = -1.0 A, V = 2.5 V (Note 2) 107.5 133 D GS Drainsource ON-resistance R m DS (ON) I = -0.5 A, V = 1.8 V (Note 2) 130 178 D GS I = -0.25 A, V = 1.5 V (Note 2) 250 D GS 151 Input capacitance C 290 iss V = 10 V, V = 0 V DS GS Output capacitance C 44 pF oss f = 1 MHz Reverse transfer capacitance Crss 32 Turn-on time t 13.4 on V = 10 V, I = 0.5 A DD D Switching time ns Turn-off time t V = 0 to 2.5 V, R = 4.7 46.2 off GS G Total Gate Charge Q 4.7 g V = 10 V, I = 2.0 A, DD D Gate-Source Charge Q 0.4 nC gs1 V = 4.5 V GS Gate-Drain Charge Q 1.0 gd Drain-Source forward voltage V I = 2.0 A, V = 0 V (Note 2) 0.9 1.2 V DSF D GS Note2: Pulse test Note3: If a forward bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-source breakdown voltage is lowered in this mode. Switching Time Test Circuit (a) Test Circuit (b) VIN 0 V 90% OUT 0 IN 10% 2.5 V (c) VOUT 2.5V R L V DS (ON) 90% 10 s V DD V = -10 V DD 10% V DD R = 4.7 G t t r f Duty 1% V : t , t < 5 ns IN r f t t on off Common Source Ta = 25C Notice on Usage Vth can be expressed as the voltage between gate and source when the low operating current value is ID = -1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2015-11-26 R G

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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