SSM3K09FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K09FU High Speed Switching Applications Unit: mm Small package Low on resistance : R = 0.7 (max) ( V = 10 V) on GS : R = 1.2 (max) ( V = 4 V) on GS Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-Source voltage V 30 V DS Gate-Source voltage V 20 V GSS DC I 400 D Drain current mA Pulse I 800 DP Drain power dissipation (Ta = 25C) P (Note 1) 150 mW D Channel temperature T 150 C ch Storage temperature T 55~150 C JEDEC stg JEITA SC-70 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in TOSHIBA 2-2E1E temperature, etc.) may cause this product to decrease in the Weight: 0.006 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board 2 (25.4 mm 25.4 mm 1.6 t, Cu Pad: 0.6 mm 3) Figure 1. Marking Equivalent Circuit Figure 1: 25.4 mm 25.4 mm 1.6 t, 2 (top view) Cu Pad: 0.6 mm 3 3 3 0.6 mm 1.0 mm D J 1 2 1 2 Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 1 2007-11-01 SSM3K09FU Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V = 16 V, V = 0 1 A GSS GS DS Drain-Source breakdown voltage V I = 1 mA, V = 0 30 V (BR) DSS D GS Drain cut-off current I V = 30 V, V = 0 1 A DSS DS GS Gate threshold voltage V V = 5 V, I = 0.1 mA 1.1 1.8 V th DS D Forward transfer admittance Y V = 5 V, I = 200 mA (Note2) 270 mS fs DS D I = 200 mA, V = 10 V (Note2) 0.5 0.7 D GS Drain-Source ON resistance R I = 200 mA, V = 4 V (Note2) 0.8 1.2 DS (ON) D GS I = 200 mA, V = 3.3 V (Note2) 1.0 1.7 D GS Input capacitance C V = 5 V, V = 0, f = 1 MHz 20 pF iss DS GS Reverse transfer capacitance C V = 5 V, V = 0, f = 1 MHz 7 pF rss DS GS Output capacitance C V = 5 V, V = 0, f = 1 MHz 16 pF oss DS GS Turn-on time t V = 5 V, I = 200 mA, 72 ns on DD D Switching time Turn-off time t V = 0~4 V 68 ns GS off Note2: Pulse test Switching Time Test Circuit (a) Test circuit (b) V IN 4 V Output 90% 4 V Input 10% 0 0 V 10 s V DD (c) V V OUT DD 10% V = 5 V DD < D.U. 1% = 90% Input: t , t < 5 ns V r f DS (ON) t t r f (Z = 50 ) out Common Source t t on off Ta = 25C Precaution V can be expressed as voltage between gate and source when low operating current value is I = 100 A for this th D product. For normal switching operation, V requires higher voltage than V and V (off) requires lower GS (on) th GS voltage than V . th (relationship can be established as follows: V < V < V ) GS (off) th GS (on) Please take this into consideration for using the device. 2 2007-11-01 50 R L