X-On Electronics has gained recognition as a prominent supplier of SSM3J355R,LF MOSFETs across the USA, India, Europe, Australia, and various other global locations. SSM3J355R,LF MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SSM3J355R,LF Toshiba

SSM3J355R,LF electronic component of Toshiba
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Part No.SSM3J355R,LF
Manufacturer: Toshiba
Category: MOSFETs
Description: MOSFET LowON Res MOSFET ID=-6A VDSS=-20V
Datasheet: SSM3J355R,LF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.1753 ea
Line Total: USD 1.18 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.1096
6000 : USD 0.1079
9000 : USD 0.1069
12000 : USD 0.1057
15000 : USD 0.1046
24000 : USD 0.1036
30000 : USD 0.1026
45000 : USD 0.1015
75000 : USD 0.1006

0
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 1.1753
10 : USD 0.8815
100 : USD 0.2191
500 : USD 0.1507
1000 : USD 0.1154
3000 : USD 0.0972

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Product Type
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
LoadingGif
 
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We are delighted to provide the SSM3J355R,LF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSM3J355R,LF and other electronic components in the MOSFETs category and beyond.

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SSM3J355R MOSFETs Silicon P-Channel MOS SSM3J355RSSM3J355RSSM3J355RSSM3J355R 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Power Management Switches 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) 1.8 V drive (2) Low drain-source on-resistance : R = 36.0 m (typ.) (V = -1.8 V) DS(ON) GS R = 28.0 m (typ.) (V = -2.5 V) DS(ON) GS R = 23.0 m (typ.) (V = -4.5 V) DS(ON) GS 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Source 3: Drain SOT-23F Start of commercial production 2016-11 2016 Toshiba Corporation 2016-11-30 1 Rev.1.0SSM3J355R 4. 4. 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Rating Unit Drain-source voltage V -20 V DSS Gate-source voltage V 10 GSS Drain current (DC) (Note 1) I -6 A D Drain current (pulsed) (Note 1), (Note 2) I -24 DP Power dissipation (Note 3) P 1 W D Power dissipation (t = 10 s) (Note 3) 2 Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Pulse width (PW) 1 ms, duty 1 % Note 3: Device mounted on a 25.4 mm 25.4 mm 1.6 mm FR4 glass epoxy board (Cu pad: 645 mm2) Note: This transistor is sensitive to electrostatic discharge and should be handled with care. Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables, operators, soldering irons and other objects should be protected against anti-static discharge. Note: The channel-to-ambient thermal resistance, R , and the drain power dissipation, P , vary according to th(ch-a) D the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account. 2016 Toshiba Corporation 2016-11-30 2 Rev.1.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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