X-On Electronics has gained recognition as a prominent supplier of SSM3J35CTC,L3F(T MOSFETs across the USA, India, Europe, Australia, and various other global locations. SSM3J35CTC,L3F(T MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SSM3J35CTC,L3F(T Toshiba

SSM3J35CTC,L3F(T electronic component of Toshiba
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Part No.SSM3J35CTC,L3F(T
Manufacturer: Toshiba
Category: MOSFETs
Description: Transistor: P-MOSFET; unipolar; -20V; -250mA; 500mW; CST3C
Datasheet: SSM3J35CTC,L3F(T Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
685: USD 0.0556 ea
Line Total: USD 38.09 
Availability - 0
MOQ: 685  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1
Multiples : 10000
1 : USD 0.0864
10 : USD 0.0813

0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 5
Multiples : 1
5 : USD 0.215
10 : USD 0.1475
100 : USD 0.096
500 : USD 0.0777
1000 : USD 0.0722
5000 : USD 0.0714

0
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 5
Multiples : 5
5 : USD 0.1997
25 : USD 0.0985
100 : USD 0.0894
235 : USD 0.0644
645 : USD 0.0605

0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 685
Multiples : 1
685 : USD 0.0556
1000 : USD 0.0538
2000 : USD 0.0531
10000 : USD 0.0515

0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 10000
Multiples : 10000
10000 : USD 0.07

   
Manufacturer
Product Category
Kind Of Package
Mounting
Case
Kind Of Channel
Polarisation
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
Power Dissipation
On-State Resistance
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We are delighted to provide the SSM3J35CTC,L3F(T from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSM3J35CTC,L3F(T and other electronic components in the MOSFETs category and beyond.

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SSM3J35CTC MOSFETs Silicon P-Channel MOS SSM3J35CTCSSM3J35CTCSSM3J35CTCSSM3J35CTC 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Analog Switches 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) 1.2 V drive (2) ESD(HBM) level 2 kV (3) Low drain-source on-resistance : R = 3.2 (typ.) ( V = -1.2 V) DS(ON) GS R = 2.3 (typ.) ( V = -1.5 V) DS(ON) GS R = 2.0 (typ.) ( V = -1.8 V) DS(ON) GS R = 1.5 (typ.) ( V = -2.5 V) DS(ON) GS R = 1.1 (typ.) ( V = -4.5 V) DS(ON) GS 3. 3. Packaging and Pin AssignmentPackaging and Pin Assignment 3. 3. Packaging and Pin AssignmentPackaging and Pin Assignment CST3C Start of commercial production 2016-01 2016-2017 2017-11-30 1 Toshiba Electronic Devices & Storage Corporation Rev.2.0SSM3J35CTC 4. 4. 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Rating Unit Drain-source voltage V -20 V DSS Gate-source voltage V 10 GSS Drain current (DC) (Note 1) I -250 mA D Drain current (pulsed) (Note 1) I -600 DP Power dissipation (Note 2) P 500 mW D Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Device mounted on a 25.4 mm 25.4 mm 1.6 mm FR4 glass epoxy board (Cu pad: 645 mm2) Note: This transistor is sensitive to electrostatic discharge and should be handled with care. Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables, operators, soldering irons and other objects should be protected against anti-static discharge. Note: The channel-to-ambient thermal resistance, R , and the drain power dissipation, P , vary according to th(ch-a) D the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account. 2016-2017 2017-11-30 2 Toshiba Electronic Devices & Storage Corporation Rev.2.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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