X-On Electronics has gained recognition as a prominent supplier of Si4434ADY-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. Si4434ADY-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Si4434ADY-T1-GE3 Vishay

Si4434ADY-T1-GE3 electronic component of Vishay
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Part No.Si4434ADY-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 250V Vds 20V Vgs SO-8
Datasheet: Si4434ADY-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5000: USD 1.1463 ea
Line Total: USD 5731.5 
Availability - 0
MOQ: 5000  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 5000
Multiples : 2500
5000 : USD 1.1463

0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 2.7202
10 : USD 2.1801
100 : USD 1.6055
500 : USD 1.4056
1000 : USD 1.2837
5000 : USD 1.1619

0
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 2.8173
10 : USD 2.0305
100 : USD 1.6522
500 : USD 1.3339
1000 : USD 1.1424
2500 : USD 1.0769

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
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We are delighted to provide the Si4434ADY-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the Si4434ADY-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Si4434ADY www.vishay.com Vishay Siliconix N-Channel 250 V (D-S) MOSFET FEATURES SO-8 Single ThunderFET power MOSFET D D 5 100 % R tested g D 6 Material categorization 7 D 8 for definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS D 4 G 33 DC/DC converters SS 22 Boost converters SS 11 S LED backlighting Top View G PD switch Marking code: 4848A Load switch PRODUCT SUMMARY S V (V) 250 DS R max. ( ) at V = 10 V 0.150 N-Channel MOSFET DS(on) GS R max. ( ) at V = 7.5 V 0.170 DS(on) GS Q typ. (nC) 8.6 g d I (A) 4.1 D Configuration Single ORDERING INFORMATION Package SO-8 Lead (Pb)-free and halogen-free Si4434ADY-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V 250 DS V Gate-source voltage V 20 GS T = 25 C 4.1 C T = 70 C 3.3 C Continuous drain current (T = 150 C) I J D a, b T = 25 C 2.8 A a, b T = 70 C 2.3 A A Pulsed drain current (t = 100 s) I 25 DM T = 25 C 5 C Continuous source-drain diode current I S a, b T = 25 C 2.4 A Single pulse avalanche current I 12 AS L = 0.1 mH Single pulse avalanche energy E 7.2 mJ AS T = 25 C 6 C T = 70 C 3.8 C Maximum power dissipation P W D a, b T = 25 C 2.9 A a, b T = 70 C 1.9 A Operating junction and storage temperature range T , T -55 to +150 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT a, c Maximum junction-to-ambient t 10 s R 36 43 thJA C/W Maximum junction-to-foot (drain) Steady state R 16 21 thJF Notes a. Surface mounted on 1 x 1 FR4 board b. t = 10 s c. Maximum under steady state conditions is 84 C/W d. T = 25 C C S17-1737-Rev. A, 20-Nov-17 Document Number: 76230 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Si4434ADY www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 250 - - V DS GS D V temperature coefficient V /T - 254 - DS DS J I = 250 A mV/C D V temperature coefficient V /T --6.9- GS(th) GS(th) J Gate-source threshold voltage V V = V , I = 250 A 2 - 4 V GS(th) DS GS D Gate-source leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 250 V, V = 0 V - - 1 DS GS Zero gate voltage drain current I A DSS V = 250 V, V = 0 V, T = 70 C - - 10 DS GS J a On-state drain current I V 10 V, V = 10 V 10 - - A D(on) DS GS V = 10 V, I = 2.8 A - 0.125 0.150 GS D a Drain-source on-state resistance R DS(on) V = 7.5 V, I = 2.7 A - 0.135 0.170 GS D a Forward transconductance g V = 10 V, I = 2.8 A - 10 - S fs DS D b Dynamic Input capacitance C - 600 - iss Output capacitance C V = 125 V, V = 0 V, f = 1 MHz -65 - pF oss DS GS Reverse transfer capacitance C -2 - rss V = 125 V, V = 10 V, I = 2 A - 10.9 16.5 DS GS D Total gate charge Q g - 8.6 12.9 Gate-source charge Q V = 125 V, V = 7.5 V, I = 2 A -2.7 - nC gs DS GS D Gate-drain charge Q -2.9 - gd Output charge Q V = 125 V, V = 0 V - 30 45 oss DS GS Gate resistance R f = 1 MHz 0.5 2.3 4.6 g Turn-on delay time t -8 16 d(on) Rise time t -22 35 r V = 125 V, R = 54.4 , I 2.3 A, DD L D V = 10 V, R = 1 Turn-off delay time t GEN g -18 30 d(off) Fall time t -22 35 f ns Turn-on delay time t -10 20 d(on) Rise time t -22 40 r V = 125 V, R = 54.4 , I 2.3 A, DD L D V = 7.5 V, R = 1 Turn-off delay time t GEN g -18 30 d(off) Fall time t -25 50 f Drain-Source Body Diode Characteristics Continuous source-drain diode current I T = 25 C - - 5 S C A Pulse diode forward current I -- 25 SM Body diode voltage V I = 2.3 A, V = 0 V - 0.8 1.2 V SD S GS Body diode reverse recovery time t - 100 150 ns rr Body diode reverse recovery charge Q - 356 550 nC rr I = 2.3 A, di/dt = 100 A/s, T = 25 C F J Reverse recovery fall time t -65 - a ns Reverse recovery rise time t -35 - b Notes a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-1737-Rev. A, 20-Nov-17 Document Number: 76230 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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