SiHP30N60AEL
www.vishay.com
Vishay Siliconix
EL Series Power MOSFET
FEATURES
D
Low figure-of-merit (FOM) R x Q
on g
TO-220AB
Low input capacitance (C )
iss
Reduced switching and conduction losses
G
Ultra low gate charge (Q )
g
Avalanche energy rated (UIS)
S
Material categorization: for definitions of compliance
D
S
G please see www.vishay.com/doc?99912
N-Channel MOSFET
APPLICATIONS
Server and telecom power supplies
PRODUCT SUMMARY
Switch mode power supplies (SMPS)
V (V) at T max. 650
DS J
Power factor correction power supplies (PFC)
R typ. () at 25 C V = 10 V 0.105
DS(on) GS
Lighting
Q max. (nC) 120
g
- High-intensity discharge (HID)
Q (nC) 14
gs
- Fluorescent ballast lighting
Q (nC) 19
gd
Industrial
Configuration Single
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Renewable energy
- Solar (PV inverters)
ORDERING INFORMATION
Package TO-220AB
Lead (Pb)-free and halogen-free SiHP30N60AEL-GE3
ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted)
C
PARAMETER SYMBOLLIMITUNIT
Drain-source voltage V 600
DS
V
Gate-source voltage V 30
GS
T = 25 C 28
C
Continuous drain current (T = 150 C) V at 10 V I
J GS D
T = 100 C 18 A
C
a
Pulsed drain current I 68
DM
Linear derating factor 2W/C
b
Single pulse avalanche energy E 353 mJ
AS
Maximum power dissipation P 250 W
D
Operating junction and storage temperature range T , T -55 to +150 C
J stg
d
Reverse diode dv/dt dv/dt 32 V/ns
c
Soldering recommendations (peak temperature) For 10 s 260 C
Notes
Initial samples marked as SiHP30N60BE
a. Repetitive rating; pulse width limited by maximum junction temperature
b. V = 120 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 5 A
DD J g AS
c. 1.6 mm from case
d. I I , di/dt = 100 A/s, starting T = 25 C
SD D J
S18-0173-Rev. A, 12-Feb-18 Document Number: 92041
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000SiHP30N60AEL
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOLTYP. MAX. UNIT
Maximum junction-to-ambient R -62
thJA
C/W
Maximum junction-to-case (drain) R -0.5
thJC
SPECIFICATIONS (T = 25 C, unless otherwise noted)
J
PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT
Static
Drain-source breakdown voltage V V = 0 V, I = 250 A 600 - - V
DS GS D
V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.68 - V/C
DS DS J D
Gate-source threshold Voltage (N) V V = V , I = 250 A 2.0 - 4.0 V
GS(th) DS GS D
V = 20 V - - 100 nA
GS
Gate-source leakage I
GSS
V = 30 V - - 1 A
GS
V = 600 V, V = 0 V - - 1
DS GS
Zero gate voltage drain current I A
DSS
V = 480 V, V = 0 V, T = 125 C - - 10
DS GS J
Drain-source on-state resistance R V = 10 V I = 15 A - 0.105 0.120
DS(on) GS D
Forward transconductance g V = 20 V, I = 15 A - 19 - S
fs DS D
Dynamic
Input capacitance C - 2565 -
iss
V = 0 V,
GS
Output capacitance C V = 100 V, - 109 -
oss DS
f = 1 MHz
Reverse transfer capacitance C -6 -
rss
pF
Effective output capacitance, energy
C -71 -
o(er)
a
related
V = 0 V to 480 V, V = 0 V
DS GS
Effective output capacitance, time
C - 367 -
o(tr)
b
related
Total gate charge Q -60 120
g
Gate-source charge Q V = 10 V I = 15 A, V = 480 V -14 - nC
gs GS D DS
Gate-drain charge Q -19 -
gd
Turn-on delay time t -26 52
d(on)
Rise time t -24 48
r V = 480 V, I = 15 A,
DD D
ns
V = 10 V, R = 9.1
Turn-off delay time t GS g -79 158
d(off)
Fall time t -33 66
f
Gate input resistance R f = 1 MHz, open drain 0.35 0.72 1.45
g
Drain-Source Body Diode Characteristics
MOSFET symbol
D
Continuous source-drain diode current I -- 26
S
showing the
A
integral reverse
G
p - n junction diode
Pulsed diode forward current I -- 68
S
SM
Diode forward voltage V T = 25 C, I = 15 A, V = 0 V - - 1.2 V
SD J S GS
Reverse recovery time t - 335 670 ns
rr
T = 25 C, I = I = 15 A,
J F S
Reverse recovery charge Q - 5.4 10.8 C
rr
di/dt = 100 A/s, V = 400 V
R
Reverse recovery current I -30 - A
RRM
Notes
a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V
oss(er) oss DS DSS
b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V
oss(tr) oss DS DSS
S18-0173-Rev. A, 12-Feb-18 Document Number: 92041
2
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000