SiHB33N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM): R x Q on g V (V) at T max. 650 DS J Low input capacitance (C ) iss R max. ( ) at 25 C V = 10 V 0.099 DS(on) GS Reduced switching and conduction losses Q max. (nC) 150 g Ultra low gate charge (Q ) g Q (nC) 24 gs Available Avalanche energy rated (UIS) Q (nC) 42 gd Material categorization: for definitions of Configuration Single compliance please see www.vishay.com/doc 99912 D APPLICATIONS 2 D PAK (TO-263) Server and telecom power supplies Switch mode power supplies (SMPS) Power factor correction power supplies (PFC) G Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting D G S Industrial S N-Channel MOSFET - Welding - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters) ORDERING INFORMATION 2 Package D PAK (TO-263) Lead (Pb)-free SiHB33N60E-E3 SiHB33N60E-GE3 Lead (Pb)-free and Halogen-free SiHB33N60ET5-GE3 SiHB33N60ET1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 600 DS V Gate-Source Voltage V 30 GS T = 25 C 33 C Continuous Drain Current (T = 150 C) V at 10 V I J GS D T = 100 C 21 A C a Pulsed Drain Current I 88 DM Linear Derating Factor 2.2 W/C b Single Pulse Avalanche Energy E 793 mJ AS Maximum Power Dissipation P 278 W D Operating Junction and Storage Temperature Range T , T -55 to +150 C J stg Drain-Source Voltage Slope V = 0 V to 80 % V 70 DS DS dV/dt V/ns d Reverse Diode dV/dt 12 c Soldering Recommendations (Peak temperature) for 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature. b. V = 50 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 7.5 A. DD J g AS c. 1.6 mm from case. d. I I , dI/dt = 100 A/s, starting T = 25 C. SD D J S16-0799-Rev. H, 02-May-16 Document Number: 91524 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHB33N60E www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP.MAX.UNIT Maximum Junction-to-Ambient R -62 thJA C/W Maximum Junction-to-Case (Drain) R -0.45 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 600 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.71 - V/C DS DS J D Gate-Source Threshold Voltage (N) V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-Source Leakage I GSS V = 30 V - - 1 A GS V = 600 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 480 V, V = 0 V, T = 125 C - - 10 DS GS J Drain-Source On-State Resistance R V = 10 V I = 16.5 A - 0.083 0.099 DS(on) GS D a Forward Transconductance g V = 30 V, I = 16.5 A - 11 - S fs DS D Dynamic Input Capacitance C - 3508 - V = 0 V, iss GS Output Capacitance C -V = 100 V, 156- oss DS Reverse Transfer Capacitance C -6f = 1 MHz - rss pF Effective Output Capacitance, Energy C - 136 - o(er) b Related V = 0 V, V = 0 V to 480 V GS DS Effective Output Capacitance, Time C - 468 - o(tr) c Related Total Gate Charge Q - 100 150 g Gate-Source Charge Q -2V = 10 V I = 16.5 A, V = 480 V 4- nC gs GS D DS Gate-Drain Charge Q -42- gd Turn-On Delay Time t -28 56 d(on) Rise Time t -60 90 r V = 480 V, I = 16.5 A DD D ns R = 9.1 , V = 10 V Turn-Off Delay Time t -9g GS 9150 d(off) Fall Time t -5480 f Gate Input Resistance R f = 1 MHz, open drain 0.2 0.7 1.0 g Drain-Source Body Diode Characteristics D MOSFET symbol Continuous Source-Drain Diode Current I -- 33 S showing the A G integral reverse Pulsed Diode Forward Current I S -- 88 SM p - n junction diode Diode Forward Voltage V T = 25 C, I = 16.5 A, V = 0 V - 0.9 1.2 V SD J S GS Reverse Recovery Time t - 503 1006 ns rr T = 25 C, I = I , J F S Reverse Recovery Charge Q - 8.5 17 C rr dI/dt = 100 A/s, V = 20 V R Reverse Recovery Current I -26 - A RRM Notes a. Repetitive rating pulse width limited by maximum junction temperature. b. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V . oss(er) oss DS DSS c. C is a fixed capacitance that gives the charging time as C while V is rising from 0 % to 80 % V . oss(tr) oss DS DSS S16-0799-Rev. H, 02-May-16 Document Number: 91524 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000