X-On Electronics has gained recognition as a prominent supplier of DMTH4004SPS-13 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMTH4004SPS-13 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMTH4004SPS-13 Diodes Incorporated

DMTH4004SPS-13 electronic component of Diodes Incorporated
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Part No.DMTH4004SPS-13
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET N-Ch Enh Mode Fet 40Vdss 20Vgss
Datasheet: DMTH4004SPS-13 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 0.594 ea
Line Total: USD 1485 
Availability - 0
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 2500
Multiples : 2500
2500 : USD 0.6148

0
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 2500
Multiples : 2500
2500 : USD 0.6352

0
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.594

   
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We are delighted to provide the DMTH4004SPS-13 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMTH4004SPS-13 and other electronic components in the MOSFETs category and beyond.

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Green DMTH4004SPS 40V +175C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features Rated to +175C Ideal for High Ambient Temperature I D BV R Max Q Typ Environments DSS DS(ON) g T = +25C C (Note 9) 100% Unclamped Inductive Switching Ensures More Reliable and Robust End Application 40V 2.7m @ V = 10V 68.6nC 100A GS Low R Minimizes Power Losses DS(ON) Low Q Minimizes Switching Losses g Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability This MOSFET is designed to minimize the on-state resistance An Automotive-Compliant Part is Available Under Separate (R ), yet maintain superior switching performance, making it DS(ON) Datasheet (DMTH4004SPSQ) ideal for high efficiency power management applications. Mechanical Data Applications Case: PowerDI 5060-8 Engine Management Systems Case Material: Molded Plastic, Green Molding Compound. Body Control Electronics UL Flammability Classification Rating 94V-0 DC-DC Converters Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) PowerDI5060-8 S D Pin1 S D D S G D Top View Top View Bottom View Internal Schematic Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMTH4004SPS-13 PowerDI5060-8 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMTH4004SPS Maximum Ratings (@T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 40 V DSS Gate-Source Voltage V 20 V GSS T = +25C 31 A Continuous Drain Current (Note 5) I A D 26 T = +70C A T = +25C C 100 Continuous Drain Current (Note 6) (Note 9) A I D T = +100C 100 C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 350 A DM Maximum Continuous Body Diode Forward Current (Note 5) I 100 A S Pulsed Body Diode Forward Current (10s Pulse, Duty Cycle = 1%) I 350 A SM 45 Avalanche Current, L=0.2mH I A AS Avalanche Energy, L=0.2mH 200 mJ E AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) T = +25C P 3.6 W A D Thermal Resistance, Junction to Ambient (Note 5) R 41 C/W JA Total Power Dissipation (Note 6) T = +25C P 167 W C D Thermal Resistance, Junction to Case (Note 6) R 0.9 C/W JC Operating and Storage Temperature Range T T -55 to +175 C J, STG Electrical Characteristics (@T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 40 V BV V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current I 1 A V = 32V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 2 4 V V = V , I = 250A GS(TH) DS GS D Static Drain-Source On-Resistance R 2.3 2.7 m V = 10V, I = 90A DS(ON) GS D Diode Forward Voltage V 0.9 1.2 V V = 0V, I = 20A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 4,305 iss V = 25V, V = 0V, DS GS Output Capacitance 1,441 pF Coss f = 1MHz Reverse Transfer Capacitance 102 C rss Gate Resistance 0.77 R V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge 68.6 Q g V = 20V, I = 90A, DD D 16.8 Gate-Source Charge Q nC gs V = 10V GS 14.2 Gate-Drain Charge Q gd 9.5 Turn-On Delay Time t D(ON) 6.7 Turn-On Rise Time t R V = 20V, V = 10V, DD GS ns 26.4 Turn-Off Delay Time t I = 90A, R = 3.5 D(OFF) D G 8.1 Turn-Off Fall Time t F Body Diode Reverse Recovery Time 52.4 ns tRR IF = 50A, di/dt = 100A/s Body Diode Reverse Recovery Charge 78.2 nC Q RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 9. Package limited. 2 of 7 DMTH4004SPS April 2017 Diodes Incorporated www.diodes.com Document number: DS37325 Rev. 5 - 2 ADVANCED INFORMATION

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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