Green
DMTH4004SPS
40V +175C N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI5060-8
Product Summary Features
Rated to +175C Ideal for High Ambient Temperature
I
D
BV R Max Q Typ Environments
DSS DS(ON) g T = +25C
C
(Note 9)
100% Unclamped Inductive Switching Ensures More Reliable and
Robust End Application
40V 2.7m @ V = 10V 68.6nC 100A
GS
Low R Minimizes Power Losses
DS(ON)
Low Q Minimizes Switching Losses
g
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Description
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
This MOSFET is designed to minimize the on-state resistance
An Automotive-Compliant Part is Available Under Separate
(R ), yet maintain superior switching performance, making it
DS(ON)
Datasheet (DMTH4004SPSQ)
ideal for high efficiency power management applications.
Mechanical Data
Applications
Case: PowerDI 5060-8
Engine Management Systems
Case Material: Molded Plastic, Green Molding Compound.
Body Control Electronics
UL Flammability Classification Rating 94V-0
DC-DC Converters
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
PowerDI5060-8
S
D
Pin1
S D
D
S
G D
Top View
Top View
Bottom View Internal Schematic
Pin Configuration
Ordering Information (Note 4)
Part Number Case Packaging
DMTH4004SPS-13 PowerDI5060-8 2,500/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See
DMTH4004SPS
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage V 40 V
DSS
Gate-Source Voltage V 20 V
GSS
T = +25C 31
A
Continuous Drain Current (Note 5) I A
D
26
T = +70C
A
T = +25C
C
100
Continuous Drain Current (Note 6) (Note 9) A
I
D
T = +100C 100
C
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 350 A
DM
Maximum Continuous Body Diode Forward Current (Note 5) I 100 A
S
Pulsed Body Diode Forward Current (10s Pulse, Duty Cycle = 1%) I 350 A
SM
45
Avalanche Current, L=0.2mH I A
AS
Avalanche Energy, L=0.2mH 200 mJ
E
AS
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5) T = +25C P 3.6 W
A D
Thermal Resistance, Junction to Ambient (Note 5) R 41 C/W
JA
Total Power Dissipation (Note 6) T = +25C P 167 W
C D
Thermal Resistance, Junction to Case (Note 6) R 0.9 C/W
JC
Operating and Storage Temperature Range T T -55 to +175 C
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage 40 V
BV V = 0V, I = 1mA
DSS GS D
Zero Gate Voltage Drain Current I 1 A V = 32V, V = 0V
DSS DS GS
Gate-Source Leakage I 100 nA V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage V 2 4 V V = V , I = 250A
GS(TH) DS GS D
Static Drain-Source On-Resistance R 2.3 2.7 m V = 10V, I = 90A
DS(ON) GS D
Diode Forward Voltage V 0.9 1.2 V V = 0V, I = 20A
SD GS S
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance C 4,305
iss
V = 25V, V = 0V,
DS GS
Output Capacitance 1,441 pF
Coss
f = 1MHz
Reverse Transfer Capacitance 102
C
rss
Gate Resistance 0.77
R V = 0V, V = 0V, f = 1MHz
g DS GS
Total Gate Charge 68.6
Q
g
V = 20V, I = 90A,
DD D
16.8
Gate-Source Charge Q nC
gs
V = 10V
GS
14.2
Gate-Drain Charge Q
gd
9.5
Turn-On Delay Time t
D(ON)
6.7
Turn-On Rise Time t
R V = 20V, V = 10V,
DD GS
ns
26.4
Turn-Off Delay Time t I = 90A, R = 3.5
D(OFF) D G
8.1
Turn-Off Fall Time t
F
Body Diode Reverse Recovery Time 52.4 ns
tRR
IF = 50A, di/dt = 100A/s
Body Diode Reverse Recovery Charge 78.2 nC
Q
RR
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
9. Package limited.
2 of 7
DMTH4004SPS April 2017
Diodes Incorporated
www.diodes.com
Document number: DS37325 Rev. 5 - 2
ADVANCED INFORMATION