DMP2010UFV 20V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary Features I Max Low R Ensures On State Losses Are Minimized D DS(ON) BV R Max DSS DS(ON) T = +25C Small Form Factor Thermally Efficient Package Enables Higher C Density End Products 9.5m V = -4.5V GS -20V -50A Occupies Just 33% of The Board Area Occupied by SO-8 12.5m V = -2.5V GS Enabling Smaller End Product Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description This MOSFET is designed to minimize the on-state resistance (R ), yet maintain superior switching performance, making it DS(ON) Mechanical Data ideal for high efficiency power management applications. Case: PowerDI 3333-8 (Type UX) Case Material: Molded Plastic,Gree Molding Compound. UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Load Switch Terminal Connections Indicator: See Diagram Power Management Functions Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate) PowerDI3333-8 (Type UX) Pin1 D S S S G G D D D S D Top View Bottom View Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMP2010UFV-7 PowerDI3333-8 (Type UX) 2000/Tape & Reel DMP2010UFV-13 PowerDI3333-8 (Type UX) 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP2010UFV Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -20 V DSS Gate-Source Voltage V 10 V GSS T = +25C -50 C Continuous Drain Current, V = -4.5V (Note 7) I A GS D -40 T = +70C C Maximum Continuous Body Diode Forward Current (Note 7) -50 A I S Pulsed Drain Current (380s Pulse, Duty Cycle = 1%) -80 A I DM Avalanche Current, L = 0.1mH (Note 8) -35 A I AS Avalanche Energy, L = 0.1mH (Note 8) E 64 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 1.0 W D Steady State Thermal Resistance, Junction to Ambient (Note 5) 122 C/W R JA Total Power Dissipation (Note 6) P 2.0 W D Steady State Thermal Resistance, Junction to Ambient (Note 6) 62 R JA C/W Thermal Resistance, Junction to Case (Note 7) 3.5 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage BV -250A DSS Zero Gate Voltage Drain Current A I DSS Gate-Source Leakage I GSS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage V V V = V , I = -250A GS(TH) DS GS D 7.5 Static Drain-Source On-Resistance m R DS(ON) 9.5 Diode Forward Voltage V -0.7 -1.2 V V = 0V, I = -10A SD GS S DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance C iss V = -10V, V = 0V DS GS Output Capacitance C pF oss f = 1.0MHz Reverse Transfer Capacitance C rss Gate Resistance R V = 0V, V = 0V, f = 1.0MHz G DS GS Total Gate Charge (V = -4.5V) Q GS g Total Gate Charge (V = -10V) Q GS g nC V = -10V, I = -3.6A DS D Gate-Source Charge Q gs Gate-Drain Charge Q gd Turn-On Delay Time t D(ON) Turn-On Rise Time t R V GS ns Turn-Off Delay Time t D(OFF) Turn-Off Fall Time t F Reverse Recovery Time ns t RR I = -3.6A, di/dt = 100A/s F Reverse Recovery Charge nC Q RR Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. 2 of 7 DMP2010UFV March 2017 Diodes Incorporated www.diodes.com Document number: DS39131 Rev. 1 - 2