DMP4025LSSQ 40V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Max (A) Low R Minimizes Conduction Losses D DS(ON) BV R Max DSS DS(ON) T = +25C A Fast Switching Speed Minimizes Switching Losses 25m V = -10V -8.0A Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) GS -40V Halogen and Antimony Free. Green Device (Note 3) -6.0A 45m V = -4.5V GS Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Mechanical Data Description and Applications Case: SO-8 This MOSFET is designed to meet the stringent requirements of Case Material: Molded Plastic, Green Molding Compound. Automotive applications. It is qualified to AEC-Q101, supported by a UL Flammability Classification Rating 94V-0 (Note 1) PPAP and is ideal for use in: Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Copper Leadframe. Motor Control Solderable per MIL-STD-202, Method 208 Backlighting Weight: 0.074 grams (Approximate) DC-DC Converters Printer Equipment SO-8 Top View Pin-Out Top View Internal Schematic Ordering Information (Note 5) Part Number Case Packaging DMP4025LSSQ-13 SO-8 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP4025LSSQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage -40 VDSS V Gate-Source Voltage 20 V GSS (Note 7) -8.0 T = +70C A Continuous Drain Current V = -10V I -6.9 GS D (Note 7) (Note 6) -6.0 A Pulsed Drain Current (Note 8) -30 V = -10V I GS DM Continuous Source Current (Body Diode) (Note 8) -8.0 I S Pulsed Source Current (Body Diode) (Note 8) I -30 SM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit (Note 6) 1.52 Power Dissipation P W D (Note 7) 2.4 (Note 6) 82 Thermal Resistance, Junction to Ambient R JA (Note 7) 52 C/W Thermal Resistance, Junction to Lead (Note 9) 48.85 R JL Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 10) Drain-Source Breakdown Voltage BV -40 V I = -250A, V = 0V DSS D GS Zero Gate Voltage Drain Current I -1.0 A V = -40V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 10) Gate Threshold Voltage V -0.8 -1.3 -1.8 V I = -250A, V = V GS(TH) D DS GS 18 25 VGS = -10V, ID = -3A Static Drain-Source On-Resistance R m DS(ON) 30 45 V = -4.5V, I = -3A GS D Forward Transconductance 16.6 S g V = -5V, I = -3A FS DS D Diode Forward Voltage -0.7 -1.0 V V I = -1A, V = 0V SD S GS DYNAMIC CHARACTERISTICS (Note 11) Input Capacitance 1,640 C ISS V = -20V, V = 0V DS GS Output Capacitance C 179 pF OSS f = 1MHz Reverse Transfer Capacitance C 128 RSS Gate Resistance R 6.43 V = 0V, V = 0V, f = 1MHz G DS GS Total Gate Charge Q 14.0 V = -4.5V G GS Total Gate Charge Q 33.7 G V = -20V DS nC Gate-Source Charge 5.5 I = -3A QGS VGS = -10V D Gate-Drain Charge 7.3 Q GD Turn-On Delay Time 6.9 t D(ON) Turn-On Rise Time 14.7 t V = -20V, V = -10V R DD GS ns Turn-Off Delay Time 53.7 t I = -3A D(OFF) D Turn-Off Fall Time t 30.9 F Notes: 6. For a device surface mounted on minimum recommended FR4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. 7. Same as Note (6), except the device is surface mounted on 25mm x 25mm x 1.6mm FR4 PCB. 8. Repetitive rating on 25mm X 25mm FR4 PCB, D=0.02, pulse width 300s pulse width by maximum junction temperature. 9. Thermal resistance from junction to solder-point (at the end of the drain lead). 10. Short duration pulse test used to minimize self-heating effect. 11. Guaranteed by design. Not subject to production testing. 2 of 7 DMP4025LSSQ May 2016 Diodes Incorporated www.diodes.com Document Number: DS38881 Rev: 1 - 2 ADVANCE INFORMATION