X-On Electronics has gained recognition as a prominent supplier of DMP4025LSSQ-13 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMP4025LSSQ-13 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMP4025LSSQ-13 Diodes Incorporated

DMP4025LSSQ-13 electronic component of Diodes Incorporated
DMP4025LSSQ-13 Diodes Incorporated
DMP4025LSSQ-13 MOSFETs
DMP4025LSSQ-13  Semiconductors

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See Product Specifications
Part No. DMP4025LSSQ-13
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET MOSFET BVDSS: 31V-40V
Datasheet: DMP4025LSSQ-13 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.2362 ea
Line Total: USD 1.24 
Availability - 4197
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4197
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 1.2362
10 : USD 0.9876
100 : USD 0.726
500 : USD 0.6325
1000 : USD 0.5291
2500 : USD 0.4961
25000 : USD 0.4884

   
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We are delighted to provide the DMP4025LSSQ-13 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMP4025LSSQ-13 and other electronic components in the MOSFETs category and beyond.

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DMP4025LSSQ 40V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Max (A) Low R Minimizes Conduction Losses D DS(ON) BV R Max DSS DS(ON) T = +25C A Fast Switching Speed Minimizes Switching Losses 25m V = -10V -8.0A Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) GS -40V Halogen and Antimony Free. Green Device (Note 3) -6.0A 45m V = -4.5V GS Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Mechanical Data Description and Applications Case: SO-8 This MOSFET is designed to meet the stringent requirements of Case Material: Molded Plastic, Green Molding Compound. Automotive applications. It is qualified to AEC-Q101, supported by a UL Flammability Classification Rating 94V-0 (Note 1) PPAP and is ideal for use in: Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Copper Leadframe. Motor Control Solderable per MIL-STD-202, Method 208 Backlighting Weight: 0.074 grams (Approximate) DC-DC Converters Printer Equipment SO-8 Top View Pin-Out Top View Internal Schematic Ordering Information (Note 5) Part Number Case Packaging DMP4025LSSQ-13 SO-8 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMP4025LSSQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage -40 VDSS V Gate-Source Voltage 20 V GSS (Note 7) -8.0 T = +70C A Continuous Drain Current V = -10V I -6.9 GS D (Note 7) (Note 6) -6.0 A Pulsed Drain Current (Note 8) -30 V = -10V I GS DM Continuous Source Current (Body Diode) (Note 8) -8.0 I S Pulsed Source Current (Body Diode) (Note 8) I -30 SM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit (Note 6) 1.52 Power Dissipation P W D (Note 7) 2.4 (Note 6) 82 Thermal Resistance, Junction to Ambient R JA (Note 7) 52 C/W Thermal Resistance, Junction to Lead (Note 9) 48.85 R JL Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 10) Drain-Source Breakdown Voltage BV -40 V I = -250A, V = 0V DSS D GS Zero Gate Voltage Drain Current I -1.0 A V = -40V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 10) Gate Threshold Voltage V -0.8 -1.3 -1.8 V I = -250A, V = V GS(TH) D DS GS 18 25 VGS = -10V, ID = -3A Static Drain-Source On-Resistance R m DS(ON) 30 45 V = -4.5V, I = -3A GS D Forward Transconductance 16.6 S g V = -5V, I = -3A FS DS D Diode Forward Voltage -0.7 -1.0 V V I = -1A, V = 0V SD S GS DYNAMIC CHARACTERISTICS (Note 11) Input Capacitance 1,640 C ISS V = -20V, V = 0V DS GS Output Capacitance C 179 pF OSS f = 1MHz Reverse Transfer Capacitance C 128 RSS Gate Resistance R 6.43 V = 0V, V = 0V, f = 1MHz G DS GS Total Gate Charge Q 14.0 V = -4.5V G GS Total Gate Charge Q 33.7 G V = -20V DS nC Gate-Source Charge 5.5 I = -3A QGS VGS = -10V D Gate-Drain Charge 7.3 Q GD Turn-On Delay Time 6.9 t D(ON) Turn-On Rise Time 14.7 t V = -20V, V = -10V R DD GS ns Turn-Off Delay Time 53.7 t I = -3A D(OFF) D Turn-Off Fall Time t 30.9 F Notes: 6. For a device surface mounted on minimum recommended FR4 PCB with high coverage of single sided 1oz copper, in still air conditions the device is measured when operating in a steady-state condition. 7. Same as Note (6), except the device is surface mounted on 25mm x 25mm x 1.6mm FR4 PCB. 8. Repetitive rating on 25mm X 25mm FR4 PCB, D=0.02, pulse width 300s pulse width by maximum junction temperature. 9. Thermal resistance from junction to solder-point (at the end of the drain lead). 10. Short duration pulse test used to minimize self-heating effect. 11. Guaranteed by design. Not subject to production testing. 2 of 7 DMP4025LSSQ May 2016 Diodes Incorporated www.diodes.com Document Number: DS38881 Rev: 1 - 2 ADVANCE INFORMATION

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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