DMP2010UFG
20V P-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
Product Summary Features
I Max Low R Ensures On State Losses Are Minimized
D DS(ON)
V R Max
(BR)DSS DS(ON)
T = +25C Small Form Factor Thermally Efficient Package Enables Higher
C
Density End Products
9.5m @ V = -4.5V
GS
-20V -42A
Occupies Just 33% of The Board Area Occupied by SO-8
12.5m @ V = -2.5V
GS
Enabling Smaller End Product
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Description
This MOSFET is designed to minimize the on-state resistance
(R ), yet maintain superior switching performance, making it
DS(ON)
Mechanical Data
ideal for high efficiency power management applications.
Case: POWERDI 3333-8
Case Material: Molded Plastic,Gree Molding Compound.
UL Flammability Classification Rating 94V-0
Applications
Moisture Sensitivity: Level 1 per J-STD-020
Load Switch
Terminal Connections Indicator: See Diagram
Power Management Functions
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (Approximate)
POWERDI 3333-8
D
Pin 1
S
S
S
G
G
D
D
D
S
D
Equivalent Circuit
Top View Bottom View
Ordering Information (Note 4)
Part Number Case Packaging
DMP2010UFG-7 POWERDI 3333-8 2000/Tape & Reel
DMP2010UFG-13 POWERDI 3333-8 3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMP2010UFG
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage V -20 V
DSS
Gate-Source Voltage V 10 V
GSS
T = +25C -12.7
A
Continuous Drain Current, V = -4.5V (Note 6) I A
GS D
-42
T = +25C
C
Maximum Continuous Body Diode Forward Current (Note 6) -3 A
I
S
Pulsed Drain Current (380s Pulse, Duty Cycle = 1%) -80 A
I
DM
Avalanche Current, L=0.1mH (Note 7) -35 A
I
AS
Avalanche Energy, L=0.1mH (Note 7) E 64 mJ
AS
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5) P 0.9 W
D
Steady State
Thermal Resistance, Junction to Ambient (Note 5) 136 C/W
R
JA
Total Power Dissipation (Note 6) P 2.3 W
D
Steady State
Thermal Resistance, Junction to Ambient (Note 6) 54
R
JA
C/W
Thermal Resistance, Junction to Case (Note 6) 4
R
JC
Operating and Storage Temperature Range -55 to +150 C
T T
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage -20 V
BV V = 0V, I = -1mA
DSS GS D
Zero Gate Voltage Drain Current -1 A
I V = -16V, V = 0V
DSS DS GS
Gate-Source Leakage 100 nA
I V = 8V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage V -0.4 -1.2 V V = V , I = -250A
GS(TH) DS GS D
9.5 V = -4.5V, I = -3.6A
GS D
Static Drain-Source On-Resistance m
R
DS(ON)
12.5 V = -2.5V, I = -3.6A
GS D
Diode Forward Voltage V -0.7 -1.2 V V = 0V, I = -10A
SD GS S
DYNAMIC CHARACTERISTICS (Note 9)
3350
Input Capacitance C
iss
V = -10V, V = 0V
DS GS
527
Output Capacitance C pF
oss
f = 1.0MHz
Reverse Transfer Capacitance 460
C
rss
Gate Resistance 10.7
R V = 0V, V = 0V, f = 1.0MHz
G DS GS
50
Total Gate Charge (V = -4.5V) Q
GS g
103
Total Gate Charge (V = -10V) Q
GS g
nC V = -10V, I = -3.6A
DS D
Gate-Source Charge 6.0
Q
gs
14.4
Gate-Drain Charge Q
gd
9.7
Turn-On Delay Time t
D(ON)
30
Turn-On Rise Time t
R V = -10V, V = -4.5V,
DD GS
ns
235
Turn-Off Delay Time t R = 4.7, I = -3.6A
D(OFF) GEN D
110
Turn-Off Fall Time t
F
Reverse Recovery Time 64 ns
t
RR
I = -3.6A, di/dt = 100A/s
F
Reverse Recovery Charge 60 nC
Q
RR
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated.
2 of 7
DMP2010UFG September 2015
Diodes Incorporated
www.diodes.com
Document number: DS37848 Rev. 2 - 2
ADVANCE INFORMATION
ADVANCE INFORMATION
NEW PRODUCT