DMN1004UFDF-13 Diodes Incorporated

DMN1004UFDF 12V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.6mm Profile Ideal for Low-Profile Applications I Max D BV R Max DSS DS(ON) 2 TA = +25C PCB Footprint of 4mm Low Gate Threshold Voltage 4.8m V = 4.5V 15A GS Low On-Resistance 12V 12A 7.0m VGS = 2.5V ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), Description please refer to the related automotive grade (Q-suffix) part. A listing can be found at This new generation MOSFET is designed to minimize the on-state DMN1004UFDF Marking Information Site 1 4U = Product Type Marking Code N4 YM = Date Code Marking 4U Y = Year (ex: H = 2020) M = Month (ex: 9 = September) Date Code Key Year 2016 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029 Code D H I J K L M N O P R Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Site 2 4U = Product Type Marking Code YWX = Date Code Marking Y = Year (ex: 0 = 2020) 4U W = Week (ex: a = Week 27 z Represents Week 52 and 53) X = Internal Code (ex: U = Monday) Date Code Key Year 2016 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029 Code 6 0 1 2 3 4 5 6 7 8 9 Week 1-26 27-52 53 Code A-Z a-z z Internal Code Sun Mon Tue Wed Thu Fri Sat Code T U V W X Y Z 2 of 8 January 2020 DMN1004UFDF www.diodes.com Diodes Incorporated Datasheet number: DS39159 Rev. 3 - 2 YWX YM