Green
DMTH4005SPS
40V +175C N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI5060-8
Product Summary Features
Rated to +175C Ideal For High Ambient Temperature
I
D
BV R Max Environments
DSS DS(ON) T = +25C
C
(Note 9)
100% Unclamped Inductive Switching Ensures More Reliable
And Robust End Application
40V 100A
3.7m @ V = 10V
GS
Low R Minimizes Power Losses
DS(ON)
Low Q Minimizes Switching Losses
g
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Description and Applications
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
This MOSFET is designed to minimize the on-state resistance
An Automotive-Compliant Part is Available Under Separate
(R ), yet maintain superior switching performance, making it
DS(ON)
Datasheet (DMTH4005SPSQ)
ideal for high-efficiency power management applications.
Mechanical Data
Engine Management Systems
Body Control Electronics
Case: PowerDI 5060-8
DC-DC Converters Case Material: Molded Plastic, Green Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
PowerDI5060-8
S
D
Pin1
S D
D
S
D
G
Top View Top View
Bottom View Internal Schematic
Pin Configuration
Ordering Information (Note 4)
Part Number Case Packaging
DMTH4005SPS-13 PowerDI5060-8 2,500 / Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See
DMTH4005SPS
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage V 40 V
DSS
Gate-Source Voltage V 20 V
GSS
T = +25C 20.9
A
Continuous Drain Current (Note 5) I A
D
17.5
T = +70C
A
T = +25C 100
C
Continuous Drain Current (Notes 6 & 9) I A
D
100
T = +100C
C
Maximum Continuous Body Diode Forward Current (Note 6) 100 A
I
S
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 320 A
I
DM
21
Avalanche Current, L=0.6mH I A
AS
132.3
Avalanche Energy, L=0.6mH E mJ
AS
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5) 2.6 W
T = +25C P
A D
Thermal Resistance, Junction to Ambient (Note 5) 57 C/W
R
JA
Total Power Dissipation (Note 6) 150 W
T = +25C P
C D
Thermal Resistance, Junction to Case (Note 6) 1 C/W
R
JC
Operating and Storage Temperature Range T T -55 to +175 C
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BV 40 V V = 0V, I = 1mA
DSS GS D
Zero Gate Voltage Drain Current 1 A
I V = 32V, V = 0V
DSS DS GS
Gate-Source Leakage 100 nA
I V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage V 2 4 V V = V , I = 250A
GS(TH) DS GS D
Static Drain-Source On-Resistance R 2.9 3.7 m V = 10V, I = 50A
DS(ON) GS D
Diode Forward Voltage 0.88 V
V V = 0V, I = 50A
SD GS S
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance 3062
C
iss
V = 20V, V = 0V,
DS GS
Output Capacitance C 902.2 pF
oss
f = 1MHz
Reverse Transfer Capacitance 179.2
C
rss
Gate Resistance R 0.67 V = 0V, V = 0V, f = 1MHz
g DS GS
Total Gate Charge 49.1
Q
g
V = 20V, I = 50A,
DD D
Gate-Source Charge Q 10.3 nC
gs
V = 10V
GS
Gate-Drain Charge 13
Q
gd
Turn-On Delay Time t 8.7
D(ON)
Turn-On Rise Time t 6.8
R
V = 20V, V = 10V,
DD GS
ns
I = 50A, R = 3
D G
Turn-Off Delay Time 18.6
t
D(OFF)
Turn-Off Fall Time t 7.3
F
Body Diode Reverse Recovery Time ns
t 31.8
RR
I = 50A, di/dt = 100A/s
F
Body Diode Reverse Recovery Charge 26.5 nC
Q
RR
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
9. Package limited.
2 of 7
DMTH4005SPS September 2017
Diodes Incorporated
www.diodes.com
Document number: DS38150 Rev. 3 - 2