SiHD14N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES D Low figure-of-merit (FOM) R x Q on g Low input capacitance (C ) iss DPAK Reduced switching and conduction losses (TO-252) Ultra low gate charge (Q ) g D G Avalanche energy rated (UIS) Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 S G S APPLICATIONS N-Channel MOSFET Server and telecom power supplies Switch mode power supplies (SMPS) Power factor correction power supplies (PFC) PRODUCT SUMMARY Lighting V (V) at T max. 650 DS J - High-intensity discharge (HID) R typ. () at 25 C V = 10 V 0.269 DS(on) GS - Fluorescent ballast lighting Q max. (nC) 64 g Industrial Q (nC) 8 gs - Welding Q (nC) 13 gd - Induction heating Configuration Single - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters) ORDERING INFORMATION Package DPAK (TO-252) SiHD14N60E-GE3 SiHD14N60ET1-GE3 Lead (Pb)-free and halogen-free SiHD14N60ET4-GE3 SiHD14N60ET5-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 600 DS V Gate-source voltage V 30 GS T = 25 C 13 C Continuous drain current (T = 150 C) V at 10 V I J GS D T = 100 C 8 A C a Pulsed drain current I 32 DM Linear derating factor 1.2 W/C b Single pulse avalanche energy E 136 mJ AS Maximum power dissipation P 147 W D Operating junction and storage temperature range T , T -55 to +150 C J stg Drain-source voltage slope T = 125 C 70 J dV/dt V/ns d Reverse diode dV/dt 32 c Soldering recommendations (peak temperature) for 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature b. V = 140 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 3.1 A DD J g AS c. 1.6 mm from case d. I I , dI/dt = 100 A/s, starting T = 25 C SD D J S17-1422-Rev. B, 11-Sep-17 Document Number: 91663 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHD14N60E www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -62 thJA C/W Maximum junction-to-case (drain) -0.85 R thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 600 - - V DS GS D V /T -0.73 - V temperature coefficient Reference to 25 C, I = 1 mA V/C DS DS J D Gate-source threshold voltage (N) V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-source leakage I GSS V = 30 V - - 1 A GS V = 600 V, V = 0 V - - 1 DS GS Zero gate voltage drain current I A DSS V = 480 V, V = 0 V, T = 125 C - - 10 DS GS J Drain-source on-state resistance R V = 10 V I = 7 A - 0.269 0.309 DS(on) GS D Forward transconductance g V = 30 V, I = 7 A - 3.8 - S fs DS D Dynamic Input capacitance C - 1205 - iss V = 0 V, GS Output capacitance C -6V = 100 V, 2- oss DS f = 1 MHz Reverse transfer capacitance C -5- rss pF Effective output capacitance, energy C -52 - a o(er) related V = 0 V to 480 V, V = 0 V DS GS Effective output capacitance, time C - 177 - o(tr) b related Total gate charge Q -32 64 g Gate-source charge Q -8V = 10 V I = 7 A, V = 480 V- nC gs GS D DS Gate-drain charge Q -13- gd Turn-on delay time t -15 30 d(on) Rise time t -19 38 r V = 480 V, I = 7 A, DD D ns Turn-off delay time t -3570 V = 10 V, R = 9.1 d(off) GS g Fall time t -1530 f Gate input resistance R f = 1 MHz, open drain 0.38 0.75 1.5 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 13 S showing the A G integral reverse Pulsed diode forward current I -- 32 S SM p - n junction diode Diode forward voltage V T = 25 C, I = 7 A, V = 0 V - - 1.2 V SD J S GS Reverse recovery time t - 281 - ns rr T = 25 C, I = I = 7 A, J F S Reverse recovery charge Q -3.4 - C rr dI/dt = 100 A/s, V = 25 V R Reverse recovery current I -22 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V oss(tr) oss DS DSS S17-1422-Rev. B, 11-Sep-17 Document Number: 91663 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000