X-On Electronics has gained recognition as a prominent supplier of SIHD4N80E-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIHD4N80E-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIHD4N80E-GE3 Vishay

SIHD4N80E-GE3 electronic component of Vishay
SIHD4N80E-GE3 Vishay
SIHD4N80E-GE3 MOSFETs
SIHD4N80E-GE3  Semiconductors

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See Product Specifications
Part No. SIHD4N80E-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 800V Vds 30V Vgs DPAK (TO-252)
Datasheet: SIHD4N80E-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.8375 ea
Line Total: USD 1.84 
Availability - 2251
Ship by Wed. 12 Feb to Fri. 14 Feb
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2251
Ship by Wed. 12 Feb to Fri. 14 Feb
MOQ : 1
Multiples : 1
1 : USD 1.8375
10 : USD 1.1964
100 : USD 0.8118
500 : USD 0.7799
3000 : USD 0.7788

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
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We are delighted to provide the SIHD4N80E-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIHD4N80E-GE3 and other electronic components in the MOSFETs category and beyond.

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SiHD4N80E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES D Low figure-of-merit (FOM) R x Q on g DPAK (TO-252) Low input capacitance (C ) iss Reduced switching and conduction losses D G Ultra low gate charge (Q ) g Avalanche energy rated (UIS) S Material categorization: for definitions of compliance G please see www.vishay.com/doc 99912 S N-Channel MOSFET APPLICATIONS Server and telecom power supplies Switch mode power supplies (SMPS) PRODUCT SUMMARY Power factor correction power supplies (PFC) V (V) at T max. 850 DS J Lighting R typ. () at 25 C V = 10 V 1.1 DS(on) GS - High-intensity discharge (HID) Q max. (nC) 32 g Q (nC) 4 - Fluorescent ballast lighting gs Q (nC) 6 gd Industrial Configuration Single - Welding - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters) ORDERING INFORMATION Package DPAK (TO-252) SiHD4N80E-GE3 SiHD4N80ET1-GE3 Lead (Pb)-free and halogen-free SiHD4N80ET4-GE3 SiHD4N80ET5-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 800 DS V Gate-source voltage V 30 GS T = 25 C 4.3 C Continuous drain current (T = 150 C) V at 10 V I J GS D T = 100 C 2.7 A C a Pulsed drain current I 11 DM Linear derating factor 0.56 W/C b Single pulse avalanche energy E 56 mJ AS Maximum power dissipation P 69 W D Operating junction and storage temperature range T , T -55 to +150 C J stg Drain-source voltage slope T = 125 C 70 J dv/dt V/ns d Reverse diode dv/dt 0.3 c Soldering recommendations (peak temperature) For 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature b. V = 140 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 2.0 A DD J g AS c. 1.6 mm from case d. I I , di/dt = 100 A/s, starting T = 25 C SD D J S19-0414-Rev. B, 06-May-2019 Document Number: 92019 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHD4N80E www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -62 thJA C/W Maximum junction-to-case (drain) R -1.8 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 800 - - V DS GS D V /T -1.1 - V temperature coefficient DS J Reference to 25 C, I = 1 mA V/C DS D Gate-source threshold Voltage (N) V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-source leakage I GSS V = 30 V - - 1 A GS V = 800 V, V = 0 V - - 1 DS GS Zero gate voltage drain current I A DSS V = 640 V, V = 0 V, T = 125 C - - 10 DS GS J Drain-source on-state resistance R V = 10 V I = 2 A - 1.1 1.27 DS(on) GS D Forward transconductance g V = 30 V, I = 2 A - 1.5 - S fs DS D Dynamic Input capacitance C - 622 - iss V = 0 V, GS Output capacitance C V = 100 V, -34 - oss DS f = 1 MHz Reverse transfer capacitance C -5 - rss pF Effective output capacitance, energy C -21 - o(er) a related V = 0 V to 480 V, V = 0 V DS GS Effective output capacitance, time C -91 - o(tr) b related Total gate charge Q -16 32 g Gate-source charge Q V = 10 V I = 2 A, V = 480 V -4 - nC gs GS D DS Gate-drain charge Q -6 - gd Turn-on delay time t -12 24 d(on) Rise time t -7 14 r V = 480 V, I = 2 A, DD D ns Turn-off delay time t -26 52 V = 10 V, R = 9.1 d(off) GS g Fall time t -20 40 f Gate input resistance R f = 1 MHz, open drain 0.6 1.2 2.4 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 4.4 S showing the A integral reverse G Pulsed diode forward current I -- 11 S SM p - n junction diode Diode forward voltage V T = 25 C, I = 2 A, V = 0 V - - 1.2 V SD J S GS Reverse recovery time t - 248 496 ns rr T = 25 C, I = I = 2 A, J F S Reverse recovery charge Q -1.4 2.8 C rr di/dt = 100 A/s, V = 25 V R Reverse recovery current I -9.2 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 V to 480 V V oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 V to 480 V V oss(tr) oss DS DSS S19-0414-Rev. B, 06-May-2019 Document Number: 92019 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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