X-On Electronics has gained recognition as a prominent supplier of IPA60R280CFD7XKSA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPA60R280CFD7XKSA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPA60R280CFD7XKSA1 Infineon

IPA60R280CFD7XKSA1 electronic component of Infineon
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See Product Specifications
Part No.IPA60R280CFD7XKSA1
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET LOW POWER_NEW
Datasheet: IPA60R280CFD7XKSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.1554 ea
Line Total: USD 3.16 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 500
Multiples : 500
500 : USD 1.6079
1000 : USD 1.4751
2000 : USD 1.4669
2500 : USD 1.4479
3000 : USD 1.4396
4000 : USD 1.4311
5000 : USD 1.4009
10000 : USD 1.3923
20000 : USD 1.3836

0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 3.1554
10 : USD 1.9574
100 : USD 1.8182
500 : USD 1.3624
1000 : USD 1.2049
5000 : USD 1.1812

0
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 8.5956
10 : USD 3.0861
100 : USD 2.5269

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
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Series
Transistor Type
Brand
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We are delighted to provide the IPA60R280CFD7XKSA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPA60R280CFD7XKSA1 and other electronic components in the MOSFETs category and beyond.

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IPA60R280CFD7 MOSFET PG-TO 220 FP 600V CoolMOS CFD7 Power Device CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications such as phase-shift full-bridge (ZVS) and LLC. Resulting from reduced gate charge (Q ), best-in-class g reverse recovery charge (Q ) and improved turn off behavior CoolMOS rr CFD7 offers highest efficiency in resonant topologies. As part of Infineons fast body diode portfolio, this new product series blends all advantages of a fast switching technology together with superior hard commutation robustness, without sacrificing easy implementation in the design-in process. The CoolMOS CFD7 technology meets highest efficiency and reliability standards and furthermore supports high power density Drain solutions. Altogether, CoolMOS CFD7 makes resonant switching Pin 2 topologies more efficient, more reliable, lighter and cooler. *1 Gate Pin 1 Features Source Ultra-fast body diode Pin 3 *1: Internal body diode Low gate charge Best-in-class reverse recovery charge (Q ) rr Improved MOSFET reverse diode dv/dt and di /dt ruggedness F Lowest FOM R *Q and R *E DS(on) g DS(on) oss Best-in-class RDS(on) in SMD and THD packages Benefits Excellent hard commutation ruggedness Highest reliability for resonant topologies Highest efficiency with outstanding ease-of-use / performance tradeoff Enabling increased power density solutions Potential applications Suiteable for Soft Switching topologies Optimized for phase-shift full-bridge (ZVS), LLC Applications Server, Telecom, EV Charging Product validation Fully qualified according to JEDEC for Industrial Applications Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit VDS Tj,max 650 V R 280 m DS(on),max Q 18 nC g,typ I 31 A D,pulse E 400V 2.0 J oss Body diode diF/dt 1300 A/s Type / Ordering Code Package Marking Related Links IPA60R280CFD7 PG-TO 220 FullPAK 60R280F7 see Appendix A Final Data Sheet 1 Rev. 2.2, 2020-01-30600V CoolMOS CFD7 Power Device IPA60R280CFD7 Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 4 Electrical characteristics . 5 Electrical characteristics diagrams . 7 Test Circuits . 11 Package Outlines . 12 Appendix A 13 Revision History 14 Trademarks . 14 Disclaimer 14 Final Data Sheet 2 Rev. 2.2, 2020-01-30

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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