SiHD9N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES Low figure-of-merit (FOM) R x Q on g D Low input capacitance (C ) iss DPAK Reduced switching and conduction losses (TO-252) Ultra low gate charge (Q ) g D G Avalanche energy rated (UIS) Material categorization: for definitions of compliance S please see www.vishay.com/doc 99912 G S APPLICATIONS N-Channel MOSFET Server and telecom power supplies Switch mode power supplies (SMPS) PRODUCT SUMMARY Power factor correction power supplies (PFC) V (V) at T max. 650 DS J Lighting R typ. () at 25 C V = 10 V 0.320 DS(on) GS - High-intensity discharge (HID) Q max. (nC) 52 g Q (nC) 6 - Fluorescent ballast lighting gs Q (nC) 13 gd Industrial Configuration Single - Welding - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters) ORDERING INFORMATION Package DPAK (TO-252) Lead (Pb)-free and halogen-free SiHD9N60E-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 600 DS V Gate-source voltage V 30 GS T = 25 C 9 C Continuous drain current (T = 150 C) V at 10 V I J GS D T = 100 C 6 A C a Pulsed drain current I 22 DM Linear derating factor 0.63 W/C b Single pulse avalanche energy E 111 mJ AS Maximum power dissipation P 78 W D Operating junction and storage temperature range T , T -55 to +150 C J stg Drain-source voltage slope T = 125 C 70 J dV/dt V/ns d Reverse diode dV/dt 40 c Soldering recommendations (peak temperature) For 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature. b. V = 140 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 2.8 A. DD J g AS c. 1.6 mm from case. d. I I , dI/dt = 100 A/s, starting T = 25 C. SD D J S17-0286-Rev. A, 27-Feb-17 Document Number: 91967 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHD9N60E www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA C/W Maximum Junction-to-Case (Drain) R -1.6 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 600 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.71 - V/C DS DS J D Gate-source threshold voltage (N) V V = V , I = 250 A 2.5 - 4.5 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-source leakage I GSS V = 30 V - - 1 A GS V = 600 V, V = 0 V - - 1 DS GS Zero gate voltage drain current I A DSS V = 480 V, V = 0 V, T = 125 C - - 10 DS GS J Drain-source on-state resistance R V = 10 V I = 4.5 A - 0.320 0.368 DS(on) GS D Forward Transconductance g V = 30 V, I = 4.5 A - 2.4 - S fs DS D Dynamic Input capacitance C - 778 - iss V = 0 V, GS Output capacitance C -4V = 100 V, 8- oss DS f = 1 MHz Reverse transfer capacitance C -4- rss pF Effective output capacitance, energy C -29 - o(er) a related V = 0 V to 480 V, V = 0 V DS GS Effective output capacitance, time C - 138 - o(tr) b related Total gate charge Q -26 52 g Gate-source charge Q -6V = 10 V I = 4.5 A, V = 480 V- nC gs GS D DS Gate-drain charge Q -13- gd Turn-on delay time t -14 28 d(on) Rise time t -13 26 r V = 480 V, I = 4.5 A, DD D ns V = 10 V, R = 9.1 Turn-off delay time t -3GS g 162 d(off) Fall time t -1224 f Gate input resistance R f = 1 MHz, open drain 0.4 1.2 2.4 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 9 S showing the A integral reverse G Pulsed diode forward current I -- 22 S SM p - n junction diode Diode forward voltage V T = 25 C, I = 4.5 A, V = 0 V - - 1.2 V SD J S GS Reverse recovery time t - 207 414 ns rr T = 25 C, I = I = 4.5 A, J F S Reverse recovery charge Q -2.2 4.4 C rr dI/dt = 100 A/s, V = 25 V R Reverse recovery current I -20 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V . oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss(tr) oss DS DSS S17-0286-Rev. A, 27-Feb-17 Document Number: 91967 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000