NVMFD5C470N MOSFET Power, Dual N-Channel 40 V, 11.7 m , 36 A Features Small Footprint (5x6 mm) for Compact Design www.onsemi.com Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G NVMFD5C470NWF Wettable Flank Option for Enhanced Optical V R MAX I MAX (BR)DSS DS(ON) D Inspection 40 V 36 A 11.7 m 10 V AECQ101 Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant MAXIMUM RATINGS (T = 25C unless otherwise noted) Dual NChannel J Parameter Symbol Value Unit D1 D2 DraintoSource Voltage V 40 V DSS GatetoSource Voltage V 20 V GS Continuous Drain T = 25C I 36 A C D G1 G2 Current R JC T = 100C 25 (Notes 1, 2, 3) C Steady State S1 S2 Power Dissipation T = 25C P 28 W C D R (Notes 1, 2) JC T = 100C 14 C Continuous Drain T = 25C I 11.7 A A D MARKING Current R JA DIAGRAM T = 100C 8.3 (Notes 1, 2, 3) A Steady D1 D1 State Power Dissipation T = 25C P 3.1 W A D S1 D1 1 R (Notes 1 & 2) JA G1 D1 XXXXXX T = 100C 1.5 A DFN8 5x6 S2 AYWZZ D2 (SO8FL) Pulsed Drain Current T = 25C, t = 10 s I 108 A A p DM G2 D2 CASE 506BT D2 D2 Operating Junction and Storage Temperature T , T 55 to C J stg + 175 XXXXXX = 5C470N (NVMFD5C470N) Source Current (Body Diode) I 23 A S = or 470NWF (NVMFD5C470NWF) A = Assembly Location Single Pulse DraintoSource Avalanche E 49 mJ AS Y = Year Energy (T = 25C, I = 2 A) J L(pk) W = Work Week Lead Temperature for Soldering Purposes T 260 C L ZZ = Lot Traceability (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. See detailed ordering, marking and shipping information on THERMAL RESISTANCE MAXIMUM RATINGS page 5 of this data sheet. Parameter Symbol Value Unit C/W JunctiontoCase Steady State R 5.3 JC JunctiontoAmbient Steady State (Note 2) R 49 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: July, 2019 Rev. 1 NVMFD5C470N/DNVMFD5C470N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 24 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25 C 10 DSS GS J V = 40 V A DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 250 A 2.5 3.5 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 6.0 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 10 A 9.75 11.7 m DS(on) GS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 420 ISS Output Capacitance C V = 0 V, f = 1 MHz, V = 25 V 210 pF OSS GS DS Reverse Transfer Capacitance C 11 RSS Total Gate Charge Q 8.0 G(TOT) Threshold Gate Charge Q 1.6 G(TH) nC GatetoSource Charge Q 2.5 V = 10 V, V = 32 V I = 10 A GS GS DS D GatetoDrain Charge Q 1.5 GD Plateau Voltage V 4.7 V GP SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 8.0 d(ON) Rise Time t 14 r V = 10 V, V = 32 V, GS DS ns I = 10 A, R = 1.0 D G TurnOff Delay Time t 16 d(OFF) Fall Time t 4.5 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.9 1.2 SD J V = 0 V, GS V I = 10 A S T = 125C 0.8 J Reverse Recovery Time t 20 RR Charge Time t 9.0 ns a V = 0 V, dIS/dt = 100 A/ s, GS I = 10 A S Discharge Time t 10 b Reverse Recovery Charge Q 7.5 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2