NVMFD5C478N Power MOSFET 40 V, 17.0 m , 27 A, Dual NChannel Features Small Footprint (5 x 6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) www.onsemi.com Low Capacitance to Minimize Driver Losses NVMFD5C478NWF Wettable Flanks Product AECQ101 Qualified and PPAP Capable V R MAX I MAX (BR)DSS DS(on) D These Devices are PbFree and are RoHS Compliant 40 V 27 A 17.0 m 10 V MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit DraintoSource Voltage V 40 V DualChannel DSS D1 D2 GatetoSource Voltage V 20 V GS Continuous Drain T = 25C I 27 A D C Current R JC T = 100C 19 (Notes 1, 2, 3, 4) C Steady G1 G2 State Power Dissipation T = 25C P 23 W C D R (Notes 1, 2, 3) JC T = 100C 12 C S1 S2 Continuous Drain T = 25C I 9.8 A A D Current R JA PIN CONNECTION & T = 100C 6.9 (Notes 1 & 3, 4) A Steady MARKING DIAGRAM State Power Dissipation T = 25C P 3.1 W D D1 D1 A 1 R (Notes 1, 3) JA S1 D1 T = 100C 1.5 1 A G1 XXXXXX D1 Pulsed Drain Current T = 25C, t = 10 s I 90 A A p DM DFN8, 5x6 AYWZZ S2 D2 (S08FL) G2 D2 Operating Junction and Storage Temperature T , T 55 to C J stg CASE 506BT D2 D2 +175 XXXXXX = 5C478N (NVMFD5C478N) or Source Current (Body Diode) I 19 A S 478NWF (NVMFD5C478NWF) Single Pulse DraintoSource Avalanche E 48 mJ AS A = Assembly Location Energy (I = 1.4 A) L(pk) Y = Year ZZ = Lot Traceability Lead Temperature for Soldering Purposes T 260 C L WW = Work Week (1/8 from case for 10 s) = PbFree Package Stresses exceeding those listed in the Maximum Ratings table may damage the (Note: Microdot may be in either location) device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) ORDERING INFORMATION Parameter Symbol Value Unit See detailed ordering, marking and shipping information on JunctiontoCase Steady State (Note 3) R 6.5 C/W JC page 5 of this data sheet. JunctiontoAmbient Steady State (Note 3) R 48.8 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Psi ( ) is used as required per JESD51 12 for packages in which substantially less than 100% of the heat flows to single case surface. 2 3. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 4. Continuous DC current rating. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: December, 2018 Rev. 1 NVMFD5C478N/DNVMFD5C478N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D Zero Gate Voltage Drain Current I T = 25C 10 A DSS J V = 0 V, GS V = 40 V DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 20 A 2.5 3.5 V GS(TH) GS DS D DraintoSource On Resistance R V = 10 V, I = 7.5 A 14 17 m DS(on) GS D Forward Transconductance g V = 3 V, I = 7.5 A 2 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 325 pF iss V = 0 V, f = 1.0 MHz, GS Output Capacitance C 165 oss V = 25 V DS Reverse Transfer Capacitance C 10 rss Total Gate Charge Q 6.3 nC G(TOT) Threshold Gate Charge Q 1.3 nC G(TH) V = 10 V, V = 32 V, I = 7.5 A GS DS D GatetoSource Charge Q 2.0 GS GatetoDrain Charge Q 1.2 GD SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 7 ns d(on) Rise Time t 13 r V = 10 V, V = 32 V, GS DS I = 7.5 A, R = 1 D G TurnOff Delay Time t 14 d(off) Fall Time t 4.5 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, T = 25C 0.84 1.2 V SD GS J I = 7.5 A S T = 125C 0.72 J Reverse Recovery Time t 18 ns RR Charge Time t 7.0 a V = 0 V, dl /dt = 100 A/ s, GS S I = 7.5 A S Discharge Time t 11 b Reverse Recovery Charge Q 6 nC RR 5. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2