DMN2050LFDB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I max D V R max (BR)DSS DS(ON) Low Input Capacitance T = +25C A Fast Switching Speed 45m V = 4.5V 4.5A GS Low Input/Output Leakage 20V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 55m V = 2.5V 4.1A GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This MOSFET has been designed to minimize the on-state resistance Case: U-DFN2020-6 Type B (R ) and yet maintain superior switching performance, making it DS(on) Case Material: Molded Plastic, Green Molding Compound. UL ideal for high efficiency power management applications. Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu over Copper leadframe. Solderable Applications per MIL-STD-202, Method 208 Weight: 0.0065 grams (approximate) Battery Charging Power Management Functions DC-DC Converters Portable Power Adaptors D1 D2 S2 G2 D2 D1 D1 G1 G2 D2 G1 S1 S1 S2 Pin1 Bottom View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMN2050LFDB -7 DFN2020-6 Type B 3,000/Tape & Reel DMN2050LFDB -13 DFN2020-6 Type B 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN2050LFDB Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 12 V GSS T = +25C Steady A 3.3 A Continuous Drain Current (Note 5) V = 4.5V I GS D State 2.6 T = +70C A Steady T = +25C 4.5 A Continuous Drain Current (Note 6) V = 4.5V I A GS D State 3.6 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) I 1 A S Pulsed Drain Current (10 s pulse, duty cycle = 1%) I 25 A DM Avalanche Current (Note 7) L = 0.1mH I 9 A AR Repetitive Avalanche Energy (Note 7) L = 0.1mH 4.5 mJ E AR Thermal Characteristics Characteristic Symbol Value Units 0.73 T = +25C A Total Power Dissipation (Note 5) W P D T = +70C 0.46 A Steady state 173 Thermal Resistance, Junction to Ambient (Note 5) R C/W JA t<10s 110 T = +25C 1.42 A Total Power Dissipation (Note 6) P W D T = +70C 0.90 A Steady state 89 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 57 C/W Thermal Resistance, Junction to Case (Note 6) R 18 JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 20 V V = 0V, I = 250 A DSS GS D 1.0 A Zero Gate Voltage Drain Current T = +25C I V = 16V, V = 0V J DSS DS GS Gate-Source Leakage 100 nA I V = 12V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage 0.4 1.0 V V V = V , I = 250 A GS(th) DS GS D 28 45 V = 4.5V, I = 5.0A GS D Static Drain-Source On-Resistance R m DS (ON) 36 55 V = 2.5V, I = 4.2A GS D Forward Transfer Admittance Y 9 S V = 5V, I = 5A fs DS D Diode Forward Voltage V 0.75 1.0 V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) 389 Input Capacitance C pF iss V = 10V, V = 0V, DS GS 72 Output Capacitance C pF oss f = 1.0MHz 63 Reverse Transfer Capacitance C pF rss 2.1 Gate Resistance R V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge (V = 4.5V) Q 5.7 nC GS g 12 nC Total Gate Charge (V = 10V) Q GS g V = 15V, I = 5.8A DS D Gate-Source Charge 0.7 nC Q gs Gate-Drain Charge 1.5 nC Q gd 5 Turn-On Delay Time t ns D(on) 8 Turn-On Rise Time t ns V = 10V, V = 4.5V, r DS GS 25 Turn-Off Delay Time t ns R = 6 , I = 1A D(off) G DS 8 Turn-Off Fall Time t ns f Reverse Recovery Time t 8.5 ns rr I = 5A, di/dt = 100A/s F Reverse Recovery Charge Q 2.1 nC rr Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. I and E rating are based on low frequency and duty cycles to keep T = +25C AR AR J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 6 September 2013 DMN2050LFDB Diodes Incorporated www.diodes.com Document number: DS36473 Rev. 2 - 2