X-On Electronics has gained recognition as a prominent supplier of IXFQ94N30P3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXFQ94N30P3 MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IXFQ94N30P3 IXYS

IXFQ94N30P3 electronic component of IXYS
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Part No.IXFQ94N30P3
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET N-Channel: Power MOSFET w/Fast Diode
Datasheet: IXFQ94N30P3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 13.762 ea
Line Total: USD 13.76 
Availability - 7
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 13.762
2 : USD 11.2
5 : USD 10.584
270 : USD 10.178

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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We are delighted to provide the IXFQ94N30P3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXFQ94N30P3 and other electronic components in the MOSFETs category and beyond.

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IXFQ94N30P3 is a power MOSFET transistor manufactured by IXYS Corporation. It is a N-channel MOSFET designed for applications that require high current conduction and switching, as well as low on-resistance. This device is rated at 94A, 30V, and has a maximum drain-source resistance (RDS(on)) of only 6mO, allowing it to provide high current conduction with minimal power loss.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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