X-On Electronics has gained recognition as a prominent supplier of IPN60R360P7SATMA1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPN60R360P7SATMA1 MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPN60R360P7SATMA1 Infineon

IPN60R360P7SATMA1 electronic component of Infineon
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See Product Specifications
Part No.IPN60R360P7SATMA1
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET CONSUMER
Datasheet: IPN60R360P7SATMA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.3674 ea
Line Total: USD 1102.2 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.3674
6000 : USD 0.3654
9000 : USD 0.3617
24000 : USD 0.3581

0
Ship by Fri. 29 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 1.0817
10 : USD 0.8862
30 : USD 0.7894
100 : USD 0.6926
500 : USD 0.6349
1000 : USD 0.6052

0
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 3.4176
10 : USD 1.2838
100 : USD 0.9538
500 : USD 0.7881
1000 : USD 0.6918
3000 : USD 0.6907

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
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Maximum Operating Temperature
Pd - Power Dissipation
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Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
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Series
Transistor Type
Brand
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We are delighted to provide the IPN60R360P7SATMA1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPN60R360P7SATMA1 and other electronic components in the MOSFETs category and beyond.

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IPN60R360P7S MOSFET PG-SOT223 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g. very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses make switching applications even more efficient, more compact and much cooler. Features Drain Pin 2, Tab Suitable for hard and soft switching (PFC and LLC) due to an outstanding commutation ruggedness Gate Significant reduction of switching and conduction losses Pin 1 Excellent ESD robustness >2kV (HBM) for all products Better RDS(on)/package products compared to competition enabled by a Source low R *A (below 1Ohm*mm) DS(on) Pin 3 Product validation acc. JEDEC Standard Benefits Ease of use and fast design-in through low ringing tendency and usage across PFC and PWM stages Simplified thermal management due to low switching and conduction losses Increased power density solutions enabled by using products with smaller footprint and higher manufacturing quality due to >2 kV ESD protection Suitable for a wide variety of applications and power ranges Potential applications PFC stages, hard switching PWM stages and resonant switching stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom and UPS. Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit VDS Tj,max 650 V RDS(on),max 360 m Q 13 nC g,typ I 26 A D,pulse E 400V 1.6 J oss Body diode di /dt 900 A/s F Type / Ordering Code Package Marking Related Links IPN60R360P7S PG-SOT223 60S360 see Appendix A Final Data Sheet 1 Rev. 2.1, 2018-04-25600V CoolMOS P7 Power Transistor IPN60R360P7S Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 4 Electrical characteristics . 5 Electrical characteristics diagrams . 7 Test Circuits . 11 Package Outlines . 12 Appendix A 13 Revision History 14 Trademarks . 14 Disclaimer 14 Final Data Sheet 2 Rev. 2.1, 2018-04-25

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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