NVMFD5C478NL Power MOSFET 40 V, 14.5 m , 29 A, Dual NChannel Features Small Footprint (5 x 6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) www.onsemi.com Low Capacitance to Minimize Driver Losses NVMFD5C478NLWF Wettable Flanks Product AECQ101 Qualified and PPAP Capable V R MAX I MAX (BR)DSS DS(on) D These Devices are PbFree and are RoHS Compliant 14.5 m 10 V MAXIMUM RATINGS (T = 25C unless otherwise noted) J 40 V 29 A 25 m 4.5 V Parameter Symbol Value Unit DraintoSource Voltage V 40 V DSS GatetoSource Voltage V 20 V GS DualChannel D1 D2 Continuous Drain T = 25C I 29 A D C Current R JC T = 100C 20.6 (Notes 1, 2, 3, 4) C Steady State Power Dissipation P W T = 25C 23 C D R (Notes 1, 2, 3) JC G1 G2 T = 100C 12 C Continuous Drain T = 25C I 10.5 A A D Current R S1 S2 JA T = 100C 7.5 (Notes 1 & 3, 4) A Steady State MARKING AND PIN Power Dissipation T = 25C P 3.1 W D A R (Notes 1, 3) CONNECTION DIAGRAM JA T = 100C 1.5 A D1 D1 S1 D1 Pulsed Drain Current T = 25C, t = 10 s I 98 A A p DM 1 G1 D1 XXXXXX Operating Junction and Storage Temperature T , T 55 to C J stg DFN8, 5x6 S2 AYWZZ D2 +175 (S08FL) G2 D2 CASE 506BT Source Current (Body Diode) I 19 A D2 D2 S Single Pulse DraintoSource Avalanche E 48 mJ XXXXXX = 5C478L (NVMFD5C478NL) or AS Energy (I = 1.4 A) 478LWF (NVMFD5C478NLWF) L(pk) A = Assembly Location Lead Temperature for Soldering Purposes T 260 C L Y = Year (1/8 from case for 10 s) W = Work Week Stresses exceeding those listed in the Maximum Ratings table may damage the ZZ = Lot Traceability device. If any of these limits are exceeded, device functionality should not be = PbFree Package assumed, damage may occur and reliability may be affected. (Note: Microdot may be in either location) THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) Parameter Symbol Value Unit ORDERING INFORMATION JunctiontoCase Steady State (Note 3) 6.4 C/W R JC See detailed ordering, marking and shipping information on JunctiontoAmbient Steady State (Note 3) R 48.8 page 5 of this data sheet. JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Psi ( ) is used as required per JESD5112 for packages in which substantially less than 100% of the heat flows to single case surface. 2 3. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 4. Continuous DC current rating. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: June, 2018 Rev. 1 NVMFD5C478NL/DNVMFD5C478NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D Zero Gate Voltage Drain Current I T = 25C 10 A DSS J V = 0 V, GS V = 40 V DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 20 A 1.2 2.2 V GS(TH) GS DS D DraintoSource On Resistance R V = 10 V, I = 7.5 A 12.1 14.5 m DS(on) GS D V = 4.5 V, I = 7.5 A 20 25 GS D Forward Transconductance g V = 15 V, I = 15 A 25 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 420 pF iss V = 0 V, f = 1.0 MHz, GS Output Capacitance C 185 oss V = 25 V DS Reverse Transfer Capacitance C 9 rss Total Gate Charge Q 8.1 nC G(TOT) Threshold Gate Charge Q 1.0 nC G(TH) V = 10 V, V = 32 V, I = 7.5 A GS DS D GatetoSource Charge Q 1.7 GS GatetoDrain Charge Q 1.2 GD Total Gate Charge Q V = 4.5 V, V = 32 V, I = 7.5 A 3.9 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 6 ns d(on) Rise Time t 14 r V = 10 V, V = 32 V, GS DS I = 7.5 A, R = 1 D G TurnOff Delay Time t 18 d(off) Fall Time t 3.5 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, T = 25C 0.84 1.2 V SD GS J I = 7.5 A S T = 125C 0.72 J Reverse Recovery Time t 17 ns RR Charge Time t 7.0 a V = 0 V, dl /dt = 100 A/ s, GS S I = 7.5 A S Discharge Time t 10 b Reverse Recovery Charge Q 6 nC RR 5. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2