DMT3006LDK N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I Max D V R Max DSS DS(ON) Low Input Capacitance T = +25C C 46.2A 6.5m V = 10V Fast Switching Speed GS 30V 10m V = 4.5V 37.0A GS Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free. Green Device (Note 3) This MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, making it DS(ON) ideal for high-efficiency power management applications. Mechanical Data Case: V-DFN3030-8 (Type Q) Applications Case Material: Molded Plastic,Gree Molding Compound. Backlighting UL Flammability Classification Rating 94V-0 Power Management Functions Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters Terminal Connections Indicator: See Diagram Terminals: Finish - NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.0172 grams (Approximate) V-DFN3030-8 (Type Q) D 8 7 6 5 D G G S S S S 1 2 3 4 Top View Bottom View Bottom View Equivalent Circuit Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMT3006LDK-7 3,000/Tape & Reel V-DFN3030-8 (Type Q) Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMT3006LDK Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS TA = +25C 17.1 I A T = +70C D A 13.7 (Note 6) Continuous Drain Current V = 10V GS T = +25C 46.2 C I A D 37.0 T = +70C C Maximum Continuous Body Diode Forward Current (Note 6) 2 A I S Pulsed Drain Current (10S Pulse, Duty Cycle = 1%) 80 A I DM Avalanche Current (Note 7) L = 0.1mH 25 A I AS Avalanche Energy (Note 7) L = 0.1mH 31 mJ E AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 1.1 W D Steady State Thermal Resistance, Junction to Ambient (Note 5) 116 C/W R JA Total Power Dissipation (Note 6) P 2.8 W D Steady State Thermal Resistance, Junction to Ambient (Note 6) 44 R JA C/W Thermal Resistance, Junction to Case 6 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage 30 V BV V = 0V, I = 250A DSS GS D 1 A Zero Gate Voltage Drain Current T = +25C I V = 24V, V = 0V J DSS DS GS V = +20V, V = 0V GS DS Gate-Source Leakage I 100 nA GSS V = -16V, V = 0V GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 1.0 3.0 V V = V , I = 250A GS(TH) DS GS D 5.5 6.5 VGS = 10V, ID = 12A Static Drain-Source On-Resistance RDS(ON) m 7.5 10 V = 4.5V, I = 12A GS D Diode Forward Voltage 1.0 V V V = 0V, I = 2A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance 1,155 C iss V = 15V, V = 0V, DS GS Output Capacitance 456 pF C oss f = 1.0MHz Reverse Transfer Capacitance 72 C rss Gate Resistance R 1.6 V = 0V, V = 0V, f = 1.0MHz g DS GS Total Gate Charge (V = 10V) Q 16.7 GS g Total Gate Charge (V = 4.5V) Q 8.4 GS g nC V = 15V, I = 9A DD D Gate-Source Charge Q 2.2 gs Gate-Drain Charge 3.5 Qgd Turn-On Delay Time 3.5 t D(ON) Turn-On Rise Time 5.5 t V = 15V, V = 10V, R DD GS ns Turn-Off Delay Time 13.5 t Rg = 3, ID = 9A D(OFF) Turn-Off Fall Time 4.6 t F Body Diode Reverse Recovery Time 19.3 ns t RR I = 1.5A, di/dt = 100A/s F Body Diode Reverse Recovery Charge Q 8.6 nC RR Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on 4.75 inches by 4.5 inches FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 7. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 7 DMT3006LDK July 2017 Diodes Incorporated www.diodes.com Document Number: DS38251 Rev. 4 - 2 NEW PRODUCT ADAVDAVNACNECDE DIN IFNOFROMRMATAITOINO N ADVANCE INFORMATION