X-On Electronics has gained recognition as a prominent supplier of IXTJ6N150 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXTJ6N150 MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IXTJ6N150 IXYS

IXTJ6N150 electronic component of IXYS
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Part No.IXTJ6N150
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET High Voltage Power MOSFET
Datasheet: IXTJ6N150 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 18.4858 ea
Line Total: USD 18.49 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 14.0384
10 : USD 12.3939
30 : USD 11.8724
120 : USD 10.4586

0
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 18.4858
2 : USD 13.4406
4 : USD 12.7049
30 : USD 12.6918

   
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Rds On - Drain-Source Resistance
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We are delighted to provide the IXTJ6N150 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXTJ6N150 and other electronic components in the MOSFETs category and beyond.

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The IXTJ6N150 is a transistor module from IXYS Corporation. It is a high-voltage, insulated-gate bipolar transistor (IGBT) module with a maximum voltage rating of 1500 V and a maximum current rating of 23 A. The module features a non-punch-through (NPT) IGBT and is suitable for various general-purpose applications, including motor control, inverter, and switching circuits.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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