Si6926ADQ New Product Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY V (V) r ( ) I (A) DS DS(on) D 0.030 V = 4.5 V 4.5 GS 0.033 V = 3.0 V 4.2 GS 2020 0.035 V = 2.5 V 3.9 GS 0.043 V = 1.8 V 3.6 GS D D 1 2 TSSOP-8 D D 1 8 1 2 S S 1 2 2 7 G G 1 2 S S 1 3 6 2 G G 1 4 5 2 Top View S S 1 2 N-Channel MOSFET N-Channel MOSFET Ordering Information: Si6926ADQ-T1E3 (Lead Free) ABSOLUTE MAXIMUM RATINGS (T = 25 C UNLESS OTHERWISE NOTED) A Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage V 20 DS VV Gate-Source Voltage V 8 GS T = 25 C 4.5 4.1 A aa Continuous Drain CurrentContinuous Drain Current (T(T = 150 = 150 C)C) II JJ DD T = 70 C 3.6 3.3 A AA Pulsed Drain Current (10 s Pulse Width) I 20 DM a Continuous Source Current (Diode Conduction) I 0.83 0.69 S T = 25 C 1.0 0.83 A aa Maximum Power DissipationMaximum Power Dissipation PP WW DD T = 70 C 0.64 0.53 A Operating Junction and Storage Temperature Range T , T 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t 10 sec 90 125 aa Maximum Junction-to-AmbientMi J ti t A bi t RR thJA Steady State 126 150 C/WC/W Maximum Junction-to-Foot (Drain) Steady State R 65 80 thJF Notes a. Surface Mounted on FR4 Board, t 10 sec. For SPICE model information via the Worldwide Web: Si6926ADQ New Product Vishay Siliconix SPECIFICATIONS (T = 25 C UNLESS OTHERWISE NOTED) J a Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage V V = V , I = 250 A 0.40 1.0 V GS(th) DS GS D V = 0 V, V = 8 V Gate-Body Leakage I 100 nA GSS DS GS V = 20 V, V = 0 V 1 DS GS Zero Gate VZero Gate Voltage Drain Currentoltage Drain Current II AA DSDSSS V = 20 V, V = 0 V, T = 55 C 5 DS GS J b On-State Drain Current I V 5 V, V = 5 V 10 A D(on) DS GS V = 4.5 V, I = 4.5 A 0.024 0.030 GS D 0.026 0.033 V = 3.0 V, I = 4.2 A GS D bb DrainDrain--Source OnSource On--State ResistanceState Resistance rr DSDS((on)on) V = 2.5 V, I = 3.9 A 0.029 0.035 GS D V = 1.8 V, I = 3.6 A 0.035 0.043 GS D b Forward Transconductance g V = 10 V, I = 4.5 A 26 S fs DS D b Diode Forward Voltage V I = 0.83 A, V = 0 V 0.6 1.1 V SD S GS a Dynamic Total Gate Charge Q 7.5 10.5 g Gate-Source Charge Q V = 10 V, V = 4.5 V, I = 4.5 A 1.2 nC gs DS GS D Gate-Drain Charge Q 1.2 gd Gate Resistance R 1.9 g Turn-On Delay Time t 6 12 d(on) Rise Time t 16 25 r VV = 10 V = 10 V,, R R = 10 = 10 DDDD LL I 1 A, V = 10 V, R = 6 Turn-Off Delay Time t D GEN g 46 70 ns d(off) Fall Time t 9 15 f Source-Drain Reverse Recovery Time t I = 0.83 A, di/dt = 100 A/ s 20 40 rr F Notes a. Guaranteed by design, not subject to production testing. b. Pulse test pulse width 300 s, duty cycle 2%. TYPICAL CHARACTERISTICS (25 C UNLESS NOTED) Output Characteristics Transfer Characteristics 20 20 V = 5 thru 2 V GS 16 16 12 1.5 V 12 8 8 T = 125 C C 4 4 25 C 55 C 0 0 0 1234 5 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 V Drain-to-Source Voltage (V) V Gate-to-Source Voltage (V) DS GS Document Number: 72754 www.vishay.com S-40230Rev. A, 16-Feb-04 2 I Drain Current (A) D I Drain Current (A) D