X-On Electronics has gained recognition as a prominent supplier of SI6926ADQ-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI6926ADQ-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI6926ADQ-T1-E3 Vishay

SI6926ADQ-T1-E3 electronic component of Vishay
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Part No.SI6926ADQ-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 20V Vds 8V Vgs TSSOP-8
Datasheet: SI6926ADQ-T1-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.0406 ea
Line Total: USD 1.04 
Availability - 35853
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
23280
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.5708
9000 : USD 0.5604

35853
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.0406
10 : USD 0.7557
100 : USD 0.5555
500 : USD 0.4829
1000 : USD 0.4499
3000 : USD 0.4466

   
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We are delighted to provide the SI6926ADQ-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI6926ADQ-T1-E3 and other electronic components in the MOSFETs category and beyond.

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Si6926ADQ New Product Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY V (V) r ( ) I (A) DS DS(on) D 0.030 V = 4.5 V 4.5 GS 0.033 V = 3.0 V 4.2 GS 2020 0.035 V = 2.5 V 3.9 GS 0.043 V = 1.8 V 3.6 GS D D 1 2 TSSOP-8 D D 1 8 1 2 S S 1 2 2 7 G G 1 2 S S 1 3 6 2 G G 1 4 5 2 Top View S S 1 2 N-Channel MOSFET N-Channel MOSFET Ordering Information: Si6926ADQ-T1E3 (Lead Free) ABSOLUTE MAXIMUM RATINGS (T = 25 C UNLESS OTHERWISE NOTED) A Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage V 20 DS VV Gate-Source Voltage V 8 GS T = 25 C 4.5 4.1 A aa Continuous Drain CurrentContinuous Drain Current (T(T = 150 = 150 C)C) II JJ DD T = 70 C 3.6 3.3 A AA Pulsed Drain Current (10 s Pulse Width) I 20 DM a Continuous Source Current (Diode Conduction) I 0.83 0.69 S T = 25 C 1.0 0.83 A aa Maximum Power DissipationMaximum Power Dissipation PP WW DD T = 70 C 0.64 0.53 A Operating Junction and Storage Temperature Range T , T 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t 10 sec 90 125 aa Maximum Junction-to-AmbientMi J ti t A bi t RR thJA Steady State 126 150 C/WC/W Maximum Junction-to-Foot (Drain) Steady State R 65 80 thJF Notes a. Surface Mounted on FR4 Board, t 10 sec. For SPICE model information via the Worldwide Web: Si6926ADQ New Product Vishay Siliconix SPECIFICATIONS (T = 25 C UNLESS OTHERWISE NOTED) J a Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage V V = V , I = 250 A 0.40 1.0 V GS(th) DS GS D V = 0 V, V = 8 V Gate-Body Leakage I 100 nA GSS DS GS V = 20 V, V = 0 V 1 DS GS Zero Gate VZero Gate Voltage Drain Currentoltage Drain Current II AA DSDSSS V = 20 V, V = 0 V, T = 55 C 5 DS GS J b On-State Drain Current I V 5 V, V = 5 V 10 A D(on) DS GS V = 4.5 V, I = 4.5 A 0.024 0.030 GS D 0.026 0.033 V = 3.0 V, I = 4.2 A GS D bb DrainDrain--Source OnSource On--State ResistanceState Resistance rr DSDS((on)on) V = 2.5 V, I = 3.9 A 0.029 0.035 GS D V = 1.8 V, I = 3.6 A 0.035 0.043 GS D b Forward Transconductance g V = 10 V, I = 4.5 A 26 S fs DS D b Diode Forward Voltage V I = 0.83 A, V = 0 V 0.6 1.1 V SD S GS a Dynamic Total Gate Charge Q 7.5 10.5 g Gate-Source Charge Q V = 10 V, V = 4.5 V, I = 4.5 A 1.2 nC gs DS GS D Gate-Drain Charge Q 1.2 gd Gate Resistance R 1.9 g Turn-On Delay Time t 6 12 d(on) Rise Time t 16 25 r VV = 10 V = 10 V,, R R = 10 = 10 DDDD LL I 1 A, V = 10 V, R = 6 Turn-Off Delay Time t D GEN g 46 70 ns d(off) Fall Time t 9 15 f Source-Drain Reverse Recovery Time t I = 0.83 A, di/dt = 100 A/ s 20 40 rr F Notes a. Guaranteed by design, not subject to production testing. b. Pulse test pulse width 300 s, duty cycle 2%. TYPICAL CHARACTERISTICS (25 C UNLESS NOTED) Output Characteristics Transfer Characteristics 20 20 V = 5 thru 2 V GS 16 16 12 1.5 V 12 8 8 T = 125 C C 4 4 25 C 55 C 0 0 0 1234 5 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 V Drain-to-Source Voltage (V) V Gate-to-Source Voltage (V) DS GS Document Number: 72754 www.vishay.com S-40230Rev. A, 16-Feb-04 2 I Drain Current (A) D I Drain Current (A) D

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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