X-On Electronics has gained recognition as a prominent supplier of SI6954ADQ-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI6954ADQ-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI6954ADQ-T1-E3 Vishay

SI6954ADQ-T1-E3 electronic component of Vishay
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Part No.SI6954ADQ-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 30V Vds 20V Vgs TSSOP-8
Datasheet: SI6954ADQ-T1-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.3654 ea
Line Total: USD 1096.2 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.7383
6000 : USD 0.7348
9000 : USD 0.7311
12000 : USD 0.7275
15000 : USD 0.7237
24000 : USD 0.7201
30000 : USD 0.7163
45000 : USD 0.7125
75000 : USD 0.7086

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.3654

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 2.4255
10 : USD 1.0353
100 : USD 0.7114
500 : USD 0.5407
1000 : USD 0.4326

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.4906
6000 : USD 0.4544
9000 : USD 0.4544
12000 : USD 0.4544

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 2.727
10 : USD 1.0226
100 : USD 0.7657
500 : USD 0.6329
1000 : USD 0.5
3000 : USD 0.4687

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 15
Multiples : 1
15 : USD 0.6681
25 : USD 0.6484
100 : USD 0.6289
250 : USD 0.6162
500 : USD 0.6162
1000 : USD 0.6162

   
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We are delighted to provide the SI6954ADQ-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI6954ADQ-T1-E3 and other electronic components in the MOSFETs category and beyond.

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Si6954ADQ Vishay Siliconix N-Channel 2.5-V (G-S) Battery Switch FEATURES PRODUCT SUMMARY Halogen-free V (V) R ()I (A) DS DS(on) D TrenchFET Power MOSFETs: 2.5 V Rated 0.053 at V = 10 V 3.4 GS 30 RoHS 0.075 at V = 4.5 V 2.9 GS COMPLIANT D D 1 2 TSSOP-8 D D 1 8 1 2 G G 1 2 S S 1 2 7 2 S S 1 3 6 2 G G 1 4 5 2 Top View S S 1 2 N-Channel MOSFET N-Channel MOSFET Ordering Information: Si6954ADQ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 sSteady State Unit Drain-Source Voltage V 30 DS V V Gate-Source Voltage 20 GS T = 25 C 3.4 3.1 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 2.7 2.5 A A I Pulsed Drain Current (10 s Pulse Width) 20 DM a I 0.83 0.69 Continuous Source Current (Diode Conduction) S T = 25 C 1.0 0.83 A a P W Maximum Power Dissipation D T = 70 C 0.96 0.53 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 90 125 a R Maximum Junction-to-Ambient thJA Steady State 126 150 C/W R Maximum Junction-to-Foot (Drain) Steady State 65 80 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. Document Number: 71130 www.vishay.com S-81221-Rev. C, 02-Jun-08 1Si6954ADQ Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ. Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 1V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 30 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 20 A On-State Drain Current D(on) DS GS V = 10 V, I = 3.4 A 0.044 0.053 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 2.9 A 0.062 0.075 GS D a g V = 15 V, I = 3.4 A 10 S Forward Transconductance fs DS D a V I = 0.83 A, V = 0 V 0.8 1.2 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 816 g Q V = 10 V, V = 10 V, I = 3.4 A Gate-Source Charge 1.4 nC gs DS GS D Gate-Drain Charge Q 1.2 gd t Turn-On Delay Time 12 20 d(on) Rise Time t 10 20 V = 10 V, R = 10 r DD L I 1 A, V = 10 V, R = 6 t Turn-Off Delay Time D GEN G 23 45 ns d(off) Fall Time t 815 f t I = 0.83 A, dI/dt = 100 A/s Source-Drain Reverse Recovery Time 25 40 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 20 20 V = 10 thru 5 V GS 16 16 4 V 12 12 8 8 T = 125 C C 4 4 3 V 25 C - 55 C 0 0 01234 0 1234 5 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 71130 2 S-81221-Rev. C, 02-Jun-08 I - Drain Current (A) D I - Drain Current (A) D

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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