X-On Electronics has gained recognition as a prominent supplier of SI7102DN-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI7102DN-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI7102DN-T1-GE3 Vishay

SI7102DN-T1-GE3 electronic component of Vishay
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Part No.SI7102DN-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 12V 35A 52W 3.8mohm @ 4.5V
Datasheet: SI7102DN-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 2.5791
10 : USD 2.3321
100 : USD 1.8741
500 : USD 1.4577
1000 : USD 1.2078
N/A

Obsolete
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.7913
N/A

Obsolete
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.5475
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.2003
30 : USD 1.1589
75 : USD 1.059
150 : USD 1.0177
375 : USD 1.014
750 : USD 1.0116
1500 : USD 1.0091
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 2.2779
10 : USD 1.8922
100 : USD 1.4703
500 : USD 1.2775
1000 : USD 1.0666
3000 : USD 0.9931
6000 : USD 0.957
9000 : USD 0.9196
24000 : USD 0.8834
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
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Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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We are delighted to provide the SI7102DN-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI7102DN-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Si7102DN Vishay Siliconix N-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 e V (V) R () Q (Typ.) I (A) DS DS(on) g D Available 0.0038 at V = 4.5 V 35 GS TrenchFET Power MOSFET 12 41 nC 0.0047 at V = 2.5 V 35 GS Low Thermal Resistance PowerPAK Package with Small Size and Low 1.07 mm Profile 100 % R Tested g PowerPAK 1212-8 APPLICATIONS Secondary Synchronous Rectification S 3.30 mm 3.30 mm Point-of-Load 1 S D 2 Load Switch S 3 G 4 D 8 D 7 D G 6 D 5 Bottom View S Ordering Information: Si7102DN-T1-E3 (Lead (Pb)-free) Si7102DN-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit V Drain-Source Voltage 12 DS V V Gate-Source Voltage 8 GS e T = 25 C 35 C e T = 70 C C 35 Continuous Drain Current (T = 150 C) I J D a, b T = 25 C A 25 a, b T = 70 C A A 17.8 I Pulsed Drain Current 60 DM e T = 25 C 35 C Continuous Source-Drain Diode Current I S a, b T = 25 C A 3.2 T = 25 C 52 C T = 70 C 33 C P Maximum Power Dissipation W D a, b T = 25 C A 3.8 a, b T = 70 C A 2.4 T , T Operating Junction and Storage Temperature Range - 50 to 150 J stg C c, d 260 Soldering Recommendations (Peak Temperature) Notes: a. Surface Mounted on 1 x 1 FR4 board. b. t = 10 s. c. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Package limited. Document Number: 74250 www.vishay.com S-83044-Rev. B, 22-Dec-08 1 Si7102DN Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a, b R t 10 s 24 33 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 1.9 2.4 thJC Notes: a. Surface Mounted on 1 x 1 FR4 board. b. Maximum under Steady State conditions is 81 C/W. SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 12 V DS GS D V Temperature Coefficient V /T 12 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 3.1 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 0.4 1.0 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Source Leakage 100 nA GSS DS GS V = 12 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 12 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 4.5 V 30 A On-State Drain Current D(on) DS GS V = 4.5 V, I = 15 A 0.0031 0.0038 GS D a R Drain-Source On-State Resistance DS(on) V = 2.5 V, I = 10 A 0.0037 0.0047 GS D a g V = 5 V, I = 15 A 110 S Forward Transconductance fs DS D b Dynamic Input Capacitance C 3720 iss C V = 6 V, V = 0 V, f = 1 MHz Output Capacitance 1290 pF oss DS GS Reverse Transfer Capacitance C 840 rss V = 6 V, V = 8 V, I = 10 A 73 110 DS GS D Q Total Gate Charge g 41 62 nC Gate-Source Charge Q V = 6 V, V = 4.5 V, I = 10 A 4.5 gs DS GS D Q Gate-Drain Charge 8.5 gd Gate Resistance R f = 1 MHz 1.4 2.1 g t Turn-On Delay Time 27 41 d(on) t Rise Time V = 6 V, R = 1.2 125 190 r DD L I 5 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 53 80 d(off) t Fall Time 12 18 f ns t Turn-On Delay Time 16 25 d(on) t Rise Time V = 6 V, R = 1.2 55 85 r DD L I 5 A, V = 8 V, R = 1 t Turn-Off Delay Time D GEN g 53 80 d(off) t Fall Time 915 f www.vishay.com Document Number: 74250 2 S-83044-Rev. B, 22-Dec-08

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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