SiHA6N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES D Thin-Lead TO-220 FULLPAK Low figure-of-merit (FOM) R x Q on g Low input capacitance (C ) iss Reduced switching and conduction losses G Ultra low gate charge (Q ) g Available Avalanche energy rated (UIS) Material categorization: for definitions of compliance S please see www.vishay.com/doc 99912 S D G N-Channel MOSFET APPLICATIONS Server and telecom power supplies PRODUCT SUMMARY Switch mode power supplies (SMPS) V (V) at T max. 700 DS J Power factor correction power supplies (PFC) R max. ( ) at 25 C V = 10 V 0.6 DS(on) GS Lighting Q max. (nC) 48 g - High-intensity discharge (HID) Q (nC) 6 gs - Fluorescent ballast lighting Q (nC) 11 gd Industrial Configuration Single - Welding - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters) ORDERING INFORMATION Package Thin-Lead TO-220 FULLPAK Lead (Pb)-free SiHA6N65E-E3 Lead (Pb)-free and halogen-free SiHA6N65E-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 650 DS V Gate-source voltage V 30 GS T = 25 C 7 C e Continuous drain current (T = 150 C) V at 10 V I J GS D T = 100 C 5 A C a Pulsed drain current I 18 DM Linear derating factor 0.63 W/C b Single pulse avalanche energy E 56 mJ AS Maximum power dissipation P 31 W D Operating junction and storage temperature range T , T -55 to +150 C J stg Drain-source voltage slope T = 125 C 37 J dV/dt V/ns d Reverse diode dV/dt 27 c Soldering recommendations (peak temperature) For 10 s 300 C Mounting torque M3 screw 0.6 Nm Notes a. Repetitive rating pulse width limited by maximum junction temperature b. V = 50 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 2 A DD J g AS c. 1.6 mm from case d. I I , dI/dt = 100 A/s, starting T = 25 C SD D J e. Limited by maximum junction temperature S17-1308-Rev. C, 21-Aug-17 Document Number: 91844 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHA6N65E www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R 43 65 thJA C/W Maximum junction-to-case (drain) 3.1 4.0 R thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 650 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.73 - V/C DS DS J D Gate-source threshold voltage (N) V V = V , I = 250 A 2 - 4 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-source leakage I GSS V = 30 V - - 1 A GS V = 650 V, V = 0 V - - 1 DS GS Zero gate voltage drain current I A DSS V = 520 V, V = 0 V, T = 125 C - - 10 DS GS J Drain-source on-state resistance R V = 10 V I = 3 A - 0.5 0.6 DS(on) GS D Forward transconductance g V = 30 V, I = 3 A - 2 - S fs DS D Dynamic Input capacitance C 410 820 1640 iss V = 0 V, GS Output capacitance C 20V = 100 V, 4080 oss DS f = 1 MHz Reverse transfer capacitance C 248 rss pF Effective output capacitance, energy C -36 - a o(er) related V = 0 V to 520 V, V = 0 V DS GS Effective output capacitance, time C - 117 - o(tr) b related Total gate charge Q -24 48 g Gate-source charge Q -6V = 10 V I = 3 A, V = 520 V- nC gs GS D DS Gate-drain charge Q -11- gd Turn-on delay time t -14 28 d(on) Rise time t -12 24 r V = 520 V, I = 3 A, DD D ns V = 10 V, R = 9.1 Turn-off delay time t -3GS g 060 d(off) Fall time t -2040 f Gate input resistance R f = 1 MHz, open drain 0.4 1.4 2.7 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 7 S showing the A integral reverse G p - n junction diode Pulsed diode forward current I -- 18 S SM Diode forward voltage V T = 25 C, I = 3 A, V = 0 V - 0.83 1.3 V SD J S GS Reverse recovery time t 118 237 474 ns rr T = 25 C, I = I = 3 A, J F S Reverse recovery charge Q -2.2 - C rr , V dI/dt = 100 A/s = 25 V R Reverse recovery current I -16 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V oss(tr) oss DS DSS S17-1308-Rev. C, 21-Aug-17 Document Number: 91844 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000