X-On Electronics has gained recognition as a prominent supplier of SIHA24N65EF-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIHA24N65EF-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIHA24N65EF-E3 Vishay

SIHA24N65EF-E3 electronic component of Vishay
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Part No.SIHA24N65EF-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET N-Ch 700V Vds w/ Fast Body Diode
Datasheet: SIHA24N65EF-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 2.893 ea
Line Total: USD 2893 
Availability - 0
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1000
Multiples : 1
1000 : USD 3.3787
2000 : USD 3.3462
2500 : USD 3.315
3000 : USD 3.2838

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1000
Multiples : 1000
1000 : USD 2.893

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Height
Length
Series
Width
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SIHA24N65EF-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIHA24N65EF-E3 and other electronic components in the MOSFETs category and beyond.

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SiHA24N65EF www.vishay.com Vishay Siliconix E Series Power MOSFET with Fast Body Diode FEATURES D Thin-Lead TO-220 FULLPAK Fast body diode MOSFET using E series technology , Q , and I Reduced t rr rr RRM Low figure-of-merit (FOM) R x Q on g Low input capacitance (C ) iss G Low switching losses due to reduced Q rr Available Ultra low gate charge (Q ) g Avalanche energy rated (UIS) S Material categorization: for definitions of compliance S D please see www.vishay.com/doc 99912 G N-Channel MOSFET APPLICATIONS Telecommunications PRODUCT SUMMARY - Server and telecom power supplies Lighting V (V) at T max. 700 DS J - High-intensity discharge (HID) R max. ( ) at 25 C V = 10 V 0.156 DS(on) GS - Fluorescent ballast lighting Q max. (nC) 122 g Consumer and computing Q (nC) 17 gs - ATX power supplies Q (nC) 36 Industrial gd - Welding Configuration Single - Battery chargers Renewable energy - Solar (PV inverters) Switch mode power supplies (SMPS) Applications using the following topologies - LCC - Phase shifted bridge (ZVS) - 3-level inverter - AC/DC bridge ORDERING INFORMATION Package Thin-Lead TO-220 FULLPAK Lead (Pb)-free SiHA24N65EF-E3 Lead (Pb)-free and halogen-free SiHA24N65EF-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 650 DS V Gate-source voltage V 30 GS T = 25 C 24 C e Continuous drain current (T = 150 C) V at 10 V I J GS D T = 100 C 15 A C a Pulsed drain current I 65 DM Linear derating factor 0.31 W/C b Single pulse avalanche energy E 691 mJ AS Maximum power dissipation P 39 W D Operating junction and storage temperature range T , T -55 to +150 C J stg Drain-source voltage slope T = 125 C 70 J dV/dt V/ns d Reverse diode dV/dt 50 c Soldering recommendations (peak temperature) for 10 s 300 C Mounting torque M3 screw 0.6 Nm Notes a. Repetitive rating pulse width limited by maximum junction temperature b. V = 50 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 7 A DD J g AS c. 1.6 mm from case d. I I , dI/dt = 900 A/s, starting T = 25 C SD D J e. Limited by maximum junction temperature S18-0015-Rev. D, 15-Jan-18 Document Number: 91825 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHA24N65EF www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -65 thJA C/W Maximum junction-to-case (drain) -3.2 R thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 650 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.68 - V/C DS DS J D Gate-source threshold voltage (N) V V = V , I = 250 A 2 - 4 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-source leakage I GSS V = 30 V - - 1 A GS V = 520 V, V = 0 V - - 1 DS GS Zero gate voltage drain current I A DSS V = 520 V, V = 0 V, T = 125 C - - 500 DS GS J Drain-source on-state resistance R V = 10 V I = 12 A - 0.13 0.156 DS(on) GS D Forward transconductance g V = 30 V, I = 12 A - 7.2 - S fs DS D Dynamic Input capacitance C - 2774 - iss V = 0 V, GS Output capacitance C -V = 100 V, 128- oss DS f = 1 MHz Reverse transfer capacitance C -4- rss pF Effective output capacitance, energy C -96 - o(er) a related V = 0 V to 520 V, V = 0 V DS GS Effective output capacitance, time C - 333 - o(tr) b related Total gate charge Q -81 122 g Gate-source charge Q -1V = 10 V I = 12 A, V = 520 V7- nC gs GS D DS Gate-drain charge Q -36- gd Turn-on delay time t -24 48 d(on) Rise time t -34 68 r V = 520 V, I = 12 A, DD D ns V = 10 V, R = 9.1 Turn-off delay time t -8GS g 0120 d(off) Fall time t -4692 f Gate input resistance R f = 1 MHz, open drain 0.2 0.5 1.0 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 24 S showing the A integral reverse G p - n junction diode Pulsed diode forward current I -- 65 S SM Diode forward voltage V T = 25 C, I = 12 A, V = 0 V - 0.9 1.2 V SD J S GS Reverse recovery time t - 151 288 ns rr T = 25 C, I = I = 12 A, J F S Reverse recovery charge Q -0.9 2.1 C rr dI/dt = 100 A/s, V = 400 V R Reverse recovery current I -13 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V oss(tr) oss DS DSS S18-0015-Rev. D, 15-Jan-18 Document Number: 91825 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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