SI7108DN-T1-GE3 Vishay

Si7108DN Vishay Siliconix N-Channel 20-V (D-S) Fast Switching MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available V (V) R ()I (A) Q (Typ.) DS DS(on) D g TrenchFET Gen II Power MOSFET for RoHS 0.0049 at V = 10 V 22 GS COMPLIANT Ultra Low On-Resistance 20 20 0.0061 at V = 4.5 V 19.7 GS New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile 100 % R Tested g APPLICATIONS PowerPAK 1212-8 Synchronous Rectification Point-of-Load Converters Protection Devices S 3.30 mm 3.30 mm 1 S Hot Swap D 2 S 3 G 4 D 8 D 7 D G 6 D 5 Bottom View S Ordering Information: Si7108DN-T1-E3 (Lead (Pb)-free) Si7108DN-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 sSteady State Unit Drain-Source Voltage V 20 DS V V Gate-Source Voltage 16 GS T = 25 C 22 14 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 17.6 11.2 A I Pulsed Drain Current 60 A DM a I 3.2 1.3 Continuous Source Current (Diode Conduction) S I Single Avalanche Current 22 AS L = 0 1 mH Single Avalanche Energy E 24 mJ AS T = 25 C 3.8 1.5 A a P W Maximum Power Dissipation D T = 70 C 2.0 0.8 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C b, c 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 24 33 a R Maximum Junction-to-Ambient thJA Steady State 65 81 C/W R Maximum Junction-to-Case (Drain) Steady State 1.9 2.4 thJC Notes: a. Surface Mounted on 1 x 1 FR4 board. b. See Reliability Manual for profile. The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 73216 www.vishay.com S-80581-Rev. E, 17-Mar-08 1Si7108DN Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 12V GS(th) DS GS D I V = 0 V, V = 16 V Gate-Body Leakage 100 nA GSS DS GS V = 20 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 20 V, V = 0 V, T = 55 C 5 DS GS J a I V 5 V, V = 10 V 40 A On-State Drain Current D(on) DS GS V = 10 V, I = 22 A 0.0041 0.0049 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 19.7 A 0.005 0.0061 GS D a g V = 15 V, I = 22 A 88 S Forward Transconductance fs DS D a V I = 3.2 A, V = 0 V 0.75 1.2 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 20 30 g Q V = 10 V, V = 4.5 V, I = 22 A Gate-Source Charge 6.3 nC gs DS GS D Gate-Drain Charge Q 4.9 gd R Gate Resistance f = 1 MHz 0.7 1.4 2.1 g Turn-On Delay Time t 10 15 d(on) t Rise Time V = 20 V, R = 20 10 15 r DD L I 1 A, V = 10 V, R = 6 Turn-Off Delay Time t 60 130 ns D GEN g d(off) t Fall Time 10 15 f Source-Drain Reverse Recovery Time t 30 60 rr I = 3.2 A, di/dt = 100 A/s F Q Reverse Recovery Charge 20 36 nC rr Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 60 60 V = 10 thru 4 V GS 3 V 50 50 40 40 30 30 T = 125 C 20 20 C 10 10 25 C - 55 C 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V - Gate-to-Source Voltage (V) V - Drain-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 73216 2 S-80581-Rev. E, 17-Mar-08 I - Drain Current (A) D I - Drain Current (A) D