Si7112DN Vishay Siliconix N-Channel 30 V (D-S) Fast Switching MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ( ) Definition I (A) DS DS(on) D TrenchFET Power MOSFET 0.0075 at V = 10 V 17.8 GS 30 New Low Thermal Resistance PowerPAK 0.0082 at V = 4.5 V 17.0 GS Package with Low 1.07 mm Profile 100 % R Tested g Compliant to RoHS Directive 2002/95/EC PowerPAK 1212-8 APPLICATIONS Synchronous Rectification S 3.30 mm 3.30 mm 1 S 2 S 3 G 4 D D 8 D 7 D 6 D 5 G Bottom View S Ordering Information: Si7112DN-T1-E3 (Lead (Pb)-free) N-Channel MOSFET Si7112DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit V Drain-Source Voltage 30 DS V Gate-Source Voltage V 12 GS T = 25 C 17.8 11.3 C a I Continuous Drain Current (T = 150 C) D J T = 70 C 14.2 9.1 C I Pulsed Drain Current 60 A DM a I 3.2 1.3 Continuous Source Current (Diode Conduction) S Single Avalanche Current I 20 AS L = 0.1 mH E Single Avalanche Energy 20 mJ AS T = 25 C 3.8 1.5 C a P W Maximum Power Dissipation D T = 70 C 2.0 0.8 C Operating Junction and Storage Temperature Range T , T - 50 to 150 J stg C b, c 260 Soldering Recommendations (Peak Temperature) Notes: a. Surface mounted on 1 x 1 FR4 board. b. See solder Profile (www.vishay.com/ppg 73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. * Pb containing terminations are not RoHS compliant, exemptions apply. Document Number: 72864 www.vishay.com S11-0855-Rev. G, 02-May-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si7112DN Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 24 33 a R Maximum Junction-to-Ambient thJA Steady State 65 81 C/W R Maximum Junction-to-Foot (Drain) Steady State 1.9 2.4 thJC Note: a. Surface mounted on 1 x 1 FR4 board. MOSFET SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 0.6 1.5 V GS(th) DS GS D I V = 0 V, V = 12 V Gate-Body Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 30 V, V = 0 V, T = 55 C 5 DS GS J a I V 5 V, V = 10 V 40 A On-State Drain Current D(on) DS GS V = 10 V, I = 17.8 A 0.0060 0.0075 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 17 A 0.0065 0.0082 GS D a g V = 15 V, I = 17.8 A 97 S Forward Transconductance fs DS D a V I = 3.2 A, V = 0 V 0.7 1.2 V Diode Forward Voltage SD S GS b Dynamic Input Capacitance C 2610 iss C V = 15 V, V = 0 V, f = 1 MHz Output Capacitance 340 pF oss DS GS Reverse Transfer Capacitance C 145 rss Q Total Gate Charge 18 27 g Gate-Source Charge Q V = 15 V, V = 4.5 V, I = 17.8 A 6.2 nC gs DS GS D Q Gate-Drain Charge 3.1 gd Gate Resistance R f = 1 MHz 0.5 1.2 1.8 g t Turn-On Delay Time 10 15 d(on) t Rise Time V = 15 V, R = 15 10 15 r DD L I 1 A, V = 10 V, R = 6 t Turn-Off Delay Time D GEN g 65 100 ns d(off) t Fall Time 10 15 f t Body Diode Reverse Recovery Time 30 60 rr I = 3.2 A, dI/dt = 100 A/s F Q Body Diode Reverse Recovery Charge 18 nC rr Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 72864 2 S11-0855-Rev. G, 02-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000