X-On Electronics has gained recognition as a prominent supplier of SI7113DN-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI7113DN-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI7113DN-T1-GE3 Vishay

SI7113DN-T1-GE3 electronic component of Vishay
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See Product Specifications
Part No.SI7113DN-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 100V 13.2A 52W 134mohm @ 10V
Datasheet: SI7113DN-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.728 ea
Line Total: USD 2184 
Availability - 90210
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
90210
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.728
6000 : USD 0.728

1065
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 1.5827
10 : USD 1.4253
30 : USD 1.3288
100 : USD 1.0391
500 : USD 0.9929
1000 : USD 0.9742

2510
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.974
10 : USD 1.624
16 : USD 1.12
43 : USD 1.05
1000 : USD 1.036

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the SI7113DN-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI7113DN-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The Vishay SI7113DN-T1-GE3 is a high-performance MOSFET (Metal Oxide Semiconductor Field Effect Transistor) device. This device is able to withstand a maximum drain-source voltage of 100V and can handle a current of up to 13.2A. It has a power rating of 52W and has an average gate-source resistance of 134mohm when its associated voltage is 10V. This MOSFET can be used in a variety of applications such as DC/DC converters, lighting applications, power management systems, and industrial motor controls.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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