Si7104DN Vishay Siliconix N-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available e V (V) R () Q (Typ.) I (A) DS DS(on) g D TrenchFET Power MOSFETs RoHS 0.0037 at V = 4.5 V 35 GS Low Thermal Resistance PowerPAK Package COMPLIANT 12 23 nC 0.007 at V = 2.5 V 35 GS with Small Size and Low 1.07 mm Profile 100 % R Tested g APPLICATIONS PowerPAK 1212-8 Synchronous Rectification Point-of-Load S 3.30 mm 3.30 mm 1 D S 2 S 3 G 4 D 8 D 7 G D 6 D 5 Bottom View S Ordering Information: Si7104DN-T1-E3 (Lead (Pb)-free) Si7104DN-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit V Drain-Source Voltage 12 DS V V Gate-Source Voltage 12 GS e T = 25 C C 35 e T = 70 C C 35 Continuous Drain Current (T = 150 C) I J D a, b T = 25 C A 26.1 a, b T = 70 C A 20.9 A I Pulsed Drain Current 60 DM e T = 25 C C 35 I Continuous Source-Drain Diode Current S a, b T = 25 C A 3.2 T = 25 C 52 C T = 70 C 33 C P Maximum Power Dissipation W D a, b T = 25 C A 3.8 a, b T = 70 C 2.4 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C c, d 260 Soldering Recommendations (Peak Temperature) Notes: a. Surface Mounted on 1 x 1 FR4 board. b. t = 10 s. c. See Solder Profile (Si7104DN Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a, b R t 10 s 24 33 Maximum Junction-to-Ambient thJA C/W Steady State R 1.9 2.4 Maximum Junction-to-Case (Drain) thJC Notes: a. Surface Mounted on 1 x 1 FR4 board. b. Maximum under Steady State conditions is 81 C/W. SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 12 V DS GS D V Temperature Coefficient V /T 8 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 4.5 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 0.6 1.8 V GS(th) DS GS D I V = 0 V, V = 12 V Gate-Source Leakage 100 nA GSS DS GS V = 12 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 12 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 4.5 V 40 A On-State Drain Current D(on) DS GS V = 4.5 V, I = 26.1 A 0.0031 0.0037 GS D a R Drain-Source On-State Resistance DS(on) V = 2.5 V, I = 19 A 0.0057 0.007 GS D a g V = 15 V, I = 26.1 A 90 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 2800 iss Output Capacitance C V = 6 V, V = 0 V, f = 1 MHz 1050 pF oss DS GS C Reverse Transfer Capacitance 520 rss V = 6 V, V = 10 V, I = 26.1 A 46 70 DS GS D Total Gate Charge Q g 23 35 nC Q Gate-Source Charge V = 6 V, V = 4.5 V, I = 26.1 A 5.3 gs DS GS D Gate-Drain Charge Q 5.1 gd R Gate Resistance f = 1 MHz 0.6 1.2 1.8 g t Turn-On Delay Time 20 30 d(on) t Rise Time V = 6 V, R = 0.6 20 30 r DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 33 50 d(off) t Fall Time 10 15 f ns t Turn-On Delay Time 12 20 d(on) t Rise Time V = 6 V, R = 0.6 11 20 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 36 55 d(off) t Fall Time 10 15 f www.vishay.com Document Number: 73406 2 S-80581-Rev. B, 17-Mar-08