IPB100N12S3-05 IPI100N12S3-05, IPP100N12S3-05 OptiMOS -T Power-Transistor Product Summary V 120 V DS R (SMD version) 4.8 mW DS(on),max I 100 A D Features OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB100N12S3-05 PG-TO263-3-2 3PN1205 IPI100N12S3-05 PG-TO262-3-1 3PN1205 IPP100N12S3-05 PG-TO220-3-1 3PN1205 Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit 1) I T =25C, V =10V 100 A Continuous drain current D C GS T =100C, C 100 2) V =10V GS 2) I T =25C 400 Pulsed drain current D,pulse C 2) E I =50A 1445 mJ Avalanche energy, single pulse AS D Avalanche current, single pulse I - 100 A AS V Gate source voltage - 20 V GS P T =25C Power dissipation 300 W tot C Operating and storage temperature T , T - -55 ... +175 C j stg Rev. 1.0 page 1 2016-06-20 IPB100N12S3-05 IPI100N12S3-05, IPP100N12S3-05 Values Parameter Symbol Conditions Unit min. typ. max. 2) Thermal characteristics R Thermal resistance, junction - case - - - 0.5 K/W thJC Thermal resistance, junction - R - - - 62 thJA ambient, leaded SMD version, device on PCB R minimal footprint - - 62 thJA 2 3) - - 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I = 1mA 120 - - V (BR)DSS GS D V V =V , I =240A Gate threshold voltage 2.0 3.0 4.0 GS(th) DS GS D V =120V, V =0V, DS GS Zero gate voltage drain current I - 0.01 1 A DSS T =25C j V =120V, V =0V, DS GS - 1 100 2) T =125C j I V =20V, V =0V Gate-source leakage current - - 100 nA GSS GS DS R V =10V, I =100A Drain-source on-state resistance - 4.3 5.1 mW DS(on) GS D V =10V, I =100A, GS D - 4.0 4.8 SMD version Rev. 1.0 page 2 2016-06-20