Si6913DQ Vishay Siliconix Dual P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETs V (V) R ( )I (A) DS DS(on) D Material categorization: For definitions of compliance please see 0.021 at V = - 4.5 V - 5.8 GS www.vishay.com/doc 99912 0.028 at V = - 2.5 V - 12 - 5.0 GS 0.037 at V = - 1.8 V - 4.4 GS APPLICATIONS Load Switch Battery Switch TSSOP-8 S S 1 2 D D 1 8 1 2 S S 1 2 7 2 S S 1 3 6 2 G G 1 2 G G 1 4 5 2 Top View Ordering Information: Si6913DQ-T1-E3 (Lead (Pb)-free) D D 1 2 Si6913DQ-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol 10 s Steady State Unit Drain-Source Voltage V - 12 DS V V Gate-Source Voltage 8 GS T = 25 C - 5.8 - 4.9 A a I Continuous Drain Current (T = 150 C) D J T = 70 C - 4.6 - 3.9 A A I Pulsed Drain Current (10 s Pulse Width) - 30 DM a I - 1 - 0.7 Continuous Source Current (Diode Conduction) S T = 25 C 1.14 0.83 A a P W Maximum Power Dissipation D T = 70 C 0.73 0.53 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 86 110 a R Maximum Junction-to-Ambient thJA Steady State 124 150 C/W R Maximum Junction-to-Foot (Drain) Steady State 52 65 thJF Notes: a. Surface mounted on 1 x 1 FR4 board. Document Number: 72368 For technical questions, contact: pmostechsupport vishay.com www.vishay.com S12-1359-Rev. C, 11-Jun-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si6913DQ Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = V , I = - 400 A Gate Threshold Voltage - 0.4 - 0.9 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Body Leakage 100 nA GSS DS GS V = - 12 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 12 V, V = 0 V, T = 70 C - 25 DS GS J a I V - 5 V, V = - 4.5 V - 20 A On-State Drain Current D(on) DS GS V - 4.5 V, I = - 5.8 A 0.016 0.021 GS D a R V = - 2.5 V, I = - 5 A 0.021 0.028 Drain-Source On-State Resistance DS(on) GS D V = - 1.8 V, I = - 4.4 A 0.029 0.037 GS D a g V = - 5 V, I = - 5.8 A 25 S Forward Transconductance fs DS D a V I = - 1 A, V = 0 V - 0.61 - 1.1 V Diode Forward Voltage SD S GS b Dynamic Q Total Gate Charge 18.5 28 g Gate-Source Charge Q V = - 6 V, V = - 4.5 V, I = - 5.8 A 2.7 nC gs DS GS D Q Gate-Drain Charge 5 gd Gate Resistance R f = 1 MHz 4.6 g t Turn-On Delay Time 45 70 d(on) Rise Time t 80 120 V = - 6 V, R = 6 r DD L I - 1 A, V = - 4.5 V, R = 6 t Turn-Off Delay Time D GEN G 130 200 ns d(off) Fall Time t 80 120 f t I = - 1 A, dI/dt = 100 A/s Source-Drain Reverse Recovery Time 65 100 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 30 30 V = 5 thru 2.5 V GS T = - 55 C 2 V C 25 C 24 24 125 C 18 18 12 12 1.5 V 6 6 0 0 01234 5 0.0 0.5 1.0 1.5 2.0 2.5 V - Drain-to-Source Voltage (V) DS - Gate-to-Source Voltage (V) V GS Output Characteristics Transfer Characteristics Document Number: 72368 For technical questions, contact: pmostechsupport vishay.com www.vishay.com S12-1359-Rev. C, 11-Jun-12 2 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Drain Current (A) D I - Drain Current (A) D