X-On Electronics has gained recognition as a prominent supplier of SI6913DQ-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI6913DQ-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI6913DQ-T1-E3 Vishay

SI6913DQ-T1-E3 electronic component of Vishay
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Part No.SI6913DQ-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET DUAL P-CH 12V (D-S)
Datasheet: SI6913DQ-T1-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.2765 ea
Line Total: USD 1.28 
Availability - 2808
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2533
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 0.9658
10 : USD 0.9314
25 : USD 0.9266
100 : USD 0.8828
250 : USD 0.8741
500 : USD 0.8316
1000 : USD 0.8191

2808
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 1.2765
10 : USD 1.0856
100 : USD 0.9246
3000 : USD 0.7843

   
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We are delighted to provide the SI6913DQ-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI6913DQ-T1-E3 and other electronic components in the MOSFETs category and beyond.

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Si6913DQ Vishay Siliconix Dual P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETs V (V) R ( )I (A) DS DS(on) D Material categorization: For definitions of compliance please see 0.021 at V = - 4.5 V - 5.8 GS www.vishay.com/doc 99912 0.028 at V = - 2.5 V - 12 - 5.0 GS 0.037 at V = - 1.8 V - 4.4 GS APPLICATIONS Load Switch Battery Switch TSSOP-8 S S 1 2 D D 1 8 1 2 S S 1 2 7 2 S S 1 3 6 2 G G 1 2 G G 1 4 5 2 Top View Ordering Information: Si6913DQ-T1-E3 (Lead (Pb)-free) D D 1 2 Si6913DQ-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol 10 s Steady State Unit Drain-Source Voltage V - 12 DS V V Gate-Source Voltage 8 GS T = 25 C - 5.8 - 4.9 A a I Continuous Drain Current (T = 150 C) D J T = 70 C - 4.6 - 3.9 A A I Pulsed Drain Current (10 s Pulse Width) - 30 DM a I - 1 - 0.7 Continuous Source Current (Diode Conduction) S T = 25 C 1.14 0.83 A a P W Maximum Power Dissipation D T = 70 C 0.73 0.53 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 86 110 a R Maximum Junction-to-Ambient thJA Steady State 124 150 C/W R Maximum Junction-to-Foot (Drain) Steady State 52 65 thJF Notes: a. Surface mounted on 1 x 1 FR4 board. Document Number: 72368 For technical questions, contact: pmostechsupport vishay.com www.vishay.com S12-1359-Rev. C, 11-Jun-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si6913DQ Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = V , I = - 400 A Gate Threshold Voltage - 0.4 - 0.9 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Body Leakage 100 nA GSS DS GS V = - 12 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 12 V, V = 0 V, T = 70 C - 25 DS GS J a I V - 5 V, V = - 4.5 V - 20 A On-State Drain Current D(on) DS GS V - 4.5 V, I = - 5.8 A 0.016 0.021 GS D a R V = - 2.5 V, I = - 5 A 0.021 0.028 Drain-Source On-State Resistance DS(on) GS D V = - 1.8 V, I = - 4.4 A 0.029 0.037 GS D a g V = - 5 V, I = - 5.8 A 25 S Forward Transconductance fs DS D a V I = - 1 A, V = 0 V - 0.61 - 1.1 V Diode Forward Voltage SD S GS b Dynamic Q Total Gate Charge 18.5 28 g Gate-Source Charge Q V = - 6 V, V = - 4.5 V, I = - 5.8 A 2.7 nC gs DS GS D Q Gate-Drain Charge 5 gd Gate Resistance R f = 1 MHz 4.6 g t Turn-On Delay Time 45 70 d(on) Rise Time t 80 120 V = - 6 V, R = 6 r DD L I - 1 A, V = - 4.5 V, R = 6 t Turn-Off Delay Time D GEN G 130 200 ns d(off) Fall Time t 80 120 f t I = - 1 A, dI/dt = 100 A/s Source-Drain Reverse Recovery Time 65 100 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 30 30 V = 5 thru 2.5 V GS T = - 55 C 2 V C 25 C 24 24 125 C 18 18 12 12 1.5 V 6 6 0 0 01234 5 0.0 0.5 1.0 1.5 2.0 2.5 V - Drain-to-Source Voltage (V) DS - Gate-to-Source Voltage (V) V GS Output Characteristics Transfer Characteristics Document Number: 72368 For technical questions, contact: pmostechsupport vishay.com www.vishay.com S12-1359-Rev. C, 11-Jun-12 2 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Drain Current (A) D I - Drain Current (A) D

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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