SiHF28N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES D TO-220 FULLPAK Fast body diode MOSFET using E series technology Reduced t , Q , and I rr rr RRM Low figure-of-merit (FOM): R x Q on g G Low input capacitance (C ) iss Low switching losses due to reduced Q rr Ultra low gate charge (Q ) g Avalanche energy rated (UIS) S Material categorization: for definitions of compliance S D G please see www.vishay.com/doc 99912 N-Channel MOSFET APPLICATIONS Telecommunications PRODUCT SUMMARY - Server and telecom power supplies V (V) at T max. 650 DS J Lighting R max. ( ) at 25 C V = 10 V 0.123 DS(on) GS - High intensity discharge (HID) Q max. (nC) 120 - Light emitting diodes (LEDs) g Consumer and computing Q (nC) 17 gs - ATX power supplies Q (nC) 33 gd Industrial Configuration Single - Welding - Battery chargers Renewable energy - Solar (PV inverters) Switch mode power suppliers (SMPS) Applications using the following topologies - LLC - Phase shifted bridge (ZVS) - 3-level inverter - AC/DC bridge ORDERING INFORMATION Package TO-220 FULLPAK Lead (Pb)-free and Halogen-free SiHF28N60EF-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 600 DS V Gate-Source Voltage V 30 GS T = 25 C 28 C e Continuous Drain Current (T = 150 C) V at 10 V I J GS D T = 100 C 18 A C a Pulsed Drain Current I 75 DM Linear Derating Factor 0.31 W/C b Single Pulse Avalanche Energy E 691 mJ AS Maximum Power Dissipation P 39 W D Operating Junction and Storage Temperature Range T , T -55 to +150 C J stg Drain-Source Voltage Slope T = 125 C 70 J dV/dt V/ns d Reverse Diode dV/dt 50 c Soldering Recommendations (Peak temperature) For 10 s 300 C Mounting Torque M3 screw 0.6 Nm Notes a. Repetitive rating pulse width limited by maximum junction temperature b. V = 50 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 7 A DD J g AS c. 1.6 mm from case d. I I , dI/dt = 900 A/s, starting T = 25 C SD D J e. Limited by maximum junction temperature S17-0294-Rev. C, 27-Feb-17 Document Number: 91604 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SiHF28N60EF www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP.MAX.UNIT Maximum Junction-to-Ambient R -65 thJA C/W Maximum Junction-to-Case (Drain) R -3.2 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 600 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.76 - V/C DS DS J D Gate-Source Threshold Voltage (N) V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-Source Leakage I GSS V = 30 V - - 1 A GS V = 480 V, V = 0 V - - 1 A DS GS Zero Gate Voltage Drain Current I DSS V = 480 V, V = 0 V, T = 125 C - - 2 mA DS GS J Drain-Source On-State Resistance R V = 10 V I = 14 A - 0.107 0.123 DS(on) GS D Forward Transconductance g V = 30 V, I = 14 A - 9.7 - S fs DS D Dynamic Input Capacitance C V = 0 V, - 2714 - iss GS Output Capacitance C -V = 100 V, 123- oss DS Reverse Transfer Capacitance C -6f = 1 MHz - rss pF Effective output capacitance, energy C -98 - o(er) a related V = 0 V, V = 0 V to 480 V GS DS Effective output capacitance, time C - 356 - o(tr) b related Total Gate Charge Q -80 120 g Gate-Source Charge Q -1V = 10 V I = 14 A, V = 480 V 7- nC gs GS D DS Gate-Drain Charge Q -33- gd Turn-On Delay Time t -24 48 d(on) Rise Time t -40 80 r V = 480 V, I = 14 A DD D ns R = 9.1 , V = 10 V Turn-Off Delay Time t -8g GS 2123 d(off) Fall Time t -3978 f Gate Input Resistance R f = 1 MHz, open drain 0.2 0.5 1.0 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 28 S showing the A G integral reverse Pulsed Diode Forward Current I S -- 70 SM p - n junction diode Diode Forward Voltage V T = 25 C, I = 11 A, V = 0 V - 0.9 1.2 V SD J S GS Reverse Recovery Time t - 142 284 ns rr T = 25 C, I = I = 14 A, J F S Reverse Recovery Charge Q - 0.97 1.94 C rr dI/dt = 100 A/s, V = 400 V R Reverse Recovery Current I - 13.2 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V oss(er) oss DS DS b. C is a fixed capacitance that gives the charging time as C while V is rising from 0 % to 80 % V oss(tr) oss DS DS S17-0294-Rev. C, 27-Feb-17 Document Number: 91604 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000