SiHF6N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES D TO-220 FULLPAK Optimal design - Low area specific on-resistance - Low input capacitance (C ) Available iss - Reduced capacitive switching losses G - High body diode ruggedness - Avalanche energy rated (UIS) Optimal efficiency and operation - Low cost S S - Simple gate drive circuitry D G N-Channel MOSFET - Low figure-of-merit (FOM): R x Q on g - Fast switching Material categorization: for definitions of compliance PRODUCT SUMMARY please see www.vishay.com/doc 99912 Note V (V) at T max. 450 DS J * This datasheet provides information about parts that are R max. ( ) at 25 C V = 10 V 1.0 DS(on) GS RoHS-compliant and / or parts that are non-RoHS-compliant. For Q max. (nC) 18 g example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. Q (nC) 3 gs Q (nC) 4 gd APPLICATIONS Configuration Single Consumer electronics - Displays (LCD or plasma TV) Server and telecom power supplies - SMPS Industrial - Welding - Induction heating - Motor drives Battery chargers ORDERING INFORMATION Package TO-220 FULLPAK Lead (Pb)-free SiHF6N40D-E3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 400 DS Gate-Source Voltage 30 V V GS Gate-Source Voltage AC (f > 1 Hz) 30 T = 25 C 6 C e Continuous Drain Current (T = 150 C) V at 10 V I J GS D T = 100 C 4 A C a Pulsed Drain Current I 13 DM Linear Derating Factor 0.24 W/C b Single Pulse Avalanche Energy E 104 mJ AS Maximum Power Dissipation P 30 W D Operating Junction and Storage Temperature Range T , T -55 to +150 C J stg Drain-Source Voltage Slope T = 125 C 24 J dV/dt V/ns d Reverse Diode dV/dt 0.48 c Soldering Recommendations (Peak temperature) For 10 s 300 C Mounting Torque M3 screw 0.6 Nm Notes a. Repetitive rating pulse width limited by maximum junction temperature. b. V = 50 V, starting T = 25 C, L = 2.3 mH, R = 25 , I = 9.5 A. DD J g AS c. 1.6 mm from case. d. I I , starting T = 25 C. SD D J e. Limited by maximum junction temperature. S16-1602-Rev. B, 15-Aug-16 Document Number: 91501 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHF6N40D www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -65 thJA C/W Maximum Junction-to-Case (Drain) R -4.1 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 400 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 250 A - 0.53 - V/C DS DS J D Gate-Source Threshold Voltage (N) V V = V , I = 250 A 3 - 5 V GS(th) DS GS D Gate-Source Leakage I V = 30 V - - 100 nA GSS GS V = 400 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 320 V, V = 0 V, T = 125 C - - 10 DS GS J Drain-Source On-State Resistance R V = 10 V I = 3 A - 0.85 1.0 DS(on) GS D Forward Transconductance g V = 50 V, I = 3 A - 1.7 - S fs DS D Dynamic Input Capacitance C - 311 - iss V = 0 V, GS Output Capacitance C -3V = 100 V, 8- oss DS f = 1 MHz Reverse Transfer Capacitance C -7- rss pF Effective output capacitance, energy C -44 - o(er) a related V = 0 V, GS V = 0 V to 320 V DS Effective output capacitance, time C -54 - o(tr) b related Total Gate Charge Q -9 18 g Gate-Source Charge Q -3V = 10 V I = 3 A, V = 320 V- nC gs GS D DS Gate-Drain Charge Q -4- gd Turn-On Delay Time t -12 24 d(on) Rise Time t -11 22 r V = 400 V, I = 3 A, DD D ns V = 10 V, R = 9.1 GS g Turn-Off Delay Time t -1428 d(off) Fall Time t -816 f Gate Input Resistance R f = 1 MHz, open drain - 1.9 - g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 6 S showing the A G integral reverse Pulsed Diode Forward Current I -- 24 SM S p - n junction diode Diode Forward Voltage V T = 25 C, I = 3 A, V = 0 V - - 1.2 V SD J S GS Reverse Recovery Time t - 236 - ns rr T = 25 C, I = I = 3 A, J F S Reverse Recovery Charge Q -1.1 - C rr , V dI/dt = 100 A/s = 20 V R Reverse Recovery Current I -9 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V . oss(er) oss DS DS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss(tr) oss DS DS S16-1602-Rev. B, 15-Aug-16 Document Number: 91501 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000