X-On Electronics has gained recognition as a prominent supplier of SIHF8N50L-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIHF8N50L-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIHF8N50L-E3 Vishay

SIHF8N50L-E3 electronic component of Vishay
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See Product Specifications
Part No.SIHF8N50L-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 500V 8A 40W 1ohm @ 10V TO-220FP
Datasheet: SIHF8N50L-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.375 ea
Line Total: USD 1.38 
Availability - 866
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
866
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 1.375
10 : USD 1.166
100 : USD 0.9636
250 : USD 0.9042
500 : USD 0.8294
1000 : USD 0.7227
2000 : USD 0.715
5000 : USD 0.715
10000 : USD 0.7106

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Height
Length
Width
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SIHF8N50L-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIHF8N50L-E3 and other electronic components in the MOSFETs category and beyond.

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SiHF8N50L www.vishay.com Vishay Siliconix Power MOSFET FEATURES D TO-220 FULLPAK Low figure-of-merit R x Q on g 100 % avalanche tested Available Gate charge improved G t /Q improved rr rr Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 S Note S D G * This datasheet provides information about parts that are N-Channel MOSFET RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. PRODUCT SUMMARY V (V) at T max. 560 DS J R ()V = 10 V 1 DS(on) GS Q max. (nC) 34 g Q (nC) 7.8 gs Q (nC) 10.4 gd Configuration Single ORDERING INFORMATION Package TO-220 FULLPAK Lead (Pb)-free SiHF8N50L-E3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 500 DS V Gate-Source Voltage V 30 GS a Continuous Drain Current V at 10 V T = 25 C I 8 GS C D A b Pulsed Drain Current I 22 DM Linear Derating Factor 0.32 W/C c Single Pulse Avalanche Energy E 180 mJ AS Maximum Power Dissipation T = 25 C P 40 W C D d Peak Diode Recovery dV/dt dV/dt 24 V/ns Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C e Soldering Recommendations (Peak temperature) For 10 s 300 Mounting Torque M3 screw 0.6 Nm Notes a. Drain current limited by maximum junction temperature. b. Repetitive rating pulse width limited by maximum junction temperature. c. V = 50 V, starting T = 25 C, L = 10 mH, R = 25 , I = 6 A. DD J g AS d. I 8 A, dI/dt 460 A/s, V V , T 150 C. SD DD DS J e. 1.6 mm from case. THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -65 thJA C/W Maximum Junction-to-Case (Drain) R -3.1 thJC S16-1602-Rev. C, 15-Aug-16 Document Number: 91387 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHF8N50L www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 500 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.5 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 3.0 - 5.0 V GS(th) DS GS D Gate-Source Leakage I V = 30 V - - 100 nA GSS GS V = 500 V, V = 0 V - - 50 DS GS Zero Gate Voltage Drain Current I A DSS V = 400 V, V = 0 V, T = 125 C - - 250 DS GS J Drain-Source On-State Resistance R V = 10 V I = 4.0 A - 0.85 1 DS(on) GS D Forward Transconductance g V = 50 V, I = 3 A - 2 - S fs DS D Dynamic Input Capacitance C - 873 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 105- pF oss DS f = 1.0 MHz Reverse Transfer Capacitance C -11- rss Total Gate Charge Q -22 34 g Gate-Source Charge Q -7V = 10 V I = 6 A, V = 400 V.8- nC gs GS D DS Gate-Drain Charge Q -10.4- gd Turn-On Delay Time t -17.3 - d(on) Rise Time t -35 - r V = 250 V, I = 6 A DD D ns R = 14 V = 10 V Turn-Off Delay Time t -2G GS 3.6- d(off) Fall Time t -17- f Gate Input Resistance R f = 1 MHz, open drain - 0.7 - g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 8 S showing the A integral reverse G Pulsed Diode Forward Current I p - n junction diode -- 22 SM S Body Diode Voltage V T = 25 C, I = 8 A, V = 0 V - - 1.5 V SD J S GS Body Diode Reverse Recovery Time t -63 - ns rr T = 25 C, I = I , dI/dt = 100 A/s, J F S Body Diode Reverse Recovery Charge Q - 114 - nC rr V = 15 V R Body Diode Reverse Recovery Current I -3.3 - A RRM S16-1602-Rev. C, 15-Aug-16 Document Number: 91387 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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