SiHF8N50L www.vishay.com Vishay Siliconix Power MOSFET FEATURES D TO-220 FULLPAK Low figure-of-merit R x Q on g 100 % avalanche tested Available Gate charge improved G t /Q improved rr rr Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 S Note S D G * This datasheet provides information about parts that are N-Channel MOSFET RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details. PRODUCT SUMMARY V (V) at T max. 560 DS J R ()V = 10 V 1 DS(on) GS Q max. (nC) 34 g Q (nC) 7.8 gs Q (nC) 10.4 gd Configuration Single ORDERING INFORMATION Package TO-220 FULLPAK Lead (Pb)-free SiHF8N50L-E3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 500 DS V Gate-Source Voltage V 30 GS a Continuous Drain Current V at 10 V T = 25 C I 8 GS C D A b Pulsed Drain Current I 22 DM Linear Derating Factor 0.32 W/C c Single Pulse Avalanche Energy E 180 mJ AS Maximum Power Dissipation T = 25 C P 40 W C D d Peak Diode Recovery dV/dt dV/dt 24 V/ns Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C e Soldering Recommendations (Peak temperature) For 10 s 300 Mounting Torque M3 screw 0.6 Nm Notes a. Drain current limited by maximum junction temperature. b. Repetitive rating pulse width limited by maximum junction temperature. c. V = 50 V, starting T = 25 C, L = 10 mH, R = 25 , I = 6 A. DD J g AS d. I 8 A, dI/dt 460 A/s, V V , T 150 C. SD DD DS J e. 1.6 mm from case. THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -65 thJA C/W Maximum Junction-to-Case (Drain) R -3.1 thJC S16-1602-Rev. C, 15-Aug-16 Document Number: 91387 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHF8N50L www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 500 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.5 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 3.0 - 5.0 V GS(th) DS GS D Gate-Source Leakage I V = 30 V - - 100 nA GSS GS V = 500 V, V = 0 V - - 50 DS GS Zero Gate Voltage Drain Current I A DSS V = 400 V, V = 0 V, T = 125 C - - 250 DS GS J Drain-Source On-State Resistance R V = 10 V I = 4.0 A - 0.85 1 DS(on) GS D Forward Transconductance g V = 50 V, I = 3 A - 2 - S fs DS D Dynamic Input Capacitance C - 873 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 105- pF oss DS f = 1.0 MHz Reverse Transfer Capacitance C -11- rss Total Gate Charge Q -22 34 g Gate-Source Charge Q -7V = 10 V I = 6 A, V = 400 V.8- nC gs GS D DS Gate-Drain Charge Q -10.4- gd Turn-On Delay Time t -17.3 - d(on) Rise Time t -35 - r V = 250 V, I = 6 A DD D ns R = 14 V = 10 V Turn-Off Delay Time t -2G GS 3.6- d(off) Fall Time t -17- f Gate Input Resistance R f = 1 MHz, open drain - 0.7 - g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 8 S showing the A integral reverse G Pulsed Diode Forward Current I p - n junction diode -- 22 SM S Body Diode Voltage V T = 25 C, I = 8 A, V = 0 V - - 1.5 V SD J S GS Body Diode Reverse Recovery Time t -63 - ns rr T = 25 C, I = I , dI/dt = 100 A/s, J F S Body Diode Reverse Recovery Charge Q - 114 - nC rr V = 15 V R Body Diode Reverse Recovery Current I -3.3 - A RRM S16-1602-Rev. C, 15-Aug-16 Document Number: 91387 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000