X-On Electronics has gained recognition as a prominent supplier of SIHB33N60EF-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIHB33N60EF-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIHB33N60EF-GE3 Vishay

SIHB33N60EF-GE3 electronic component of Vishay
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Part No.SIHB33N60EF-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
Datasheet: SIHB33N60EF-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 7.5785 ea
Line Total: USD 7.58 
Availability - 278
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
278
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 7.5785
10 : USD 5.359
100 : USD 4.278

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Tradename
Configuration
Transistor Type
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
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We are delighted to provide the SIHB33N60EF-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIHB33N60EF-GE3 and other electronic components in the MOSFETs category and beyond.

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SiHB33N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY Fast body diode MOSFET using E series V (V) at T max. 650 technology DS J Reduced t , Q , and I R max. at 25 C ()V = 10 V 0.098 rr rr RRM DS(on) GS Low figure-of-merit (FOM): R x Q on g Q (Max.) (nC) 155 g Low input capacitance (C ) iss Q (nC) 22 gs Reduced switching and conduction losses Q (nC) 43 gd Ultra low gate charge (Q ) g Configuration Single Avalanche energy rated (UIS) Material categorization: for definitions of compliance D please see www.vishay.com/doc 99912 2 D PAK (TO-263) APPLICATIONS Telecommunications - Server and telecom power supplies G Lighting - High-intensity discharge (HID) - Light emitting diodes (LEDs) D G S Consumer and computing S - ATX power supplies N-Channel MOSFET Industrial - Welding - Battery chargers Renewable energy - Solar (PV inverters) Switch mode power suppliers (SMPS) Applications using the following topologies - LLC - Phase shifted bridge (ZVS) - 3-level inverter - AC/DC bridge ORDERING INFORMATION 2 Package D PAK (TO-263) Lead (Pb)-free and Halogen-free SiHB33N60EF-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 600 DS V Gate-Source Voltage V 30 GS T = 25 C 33 C Continuous Drain Current (T = 150 C) V at 10 V I J GS D T = 100 C 21 A C a Pulsed Drain Current (Typical) I 100 DM Linear Derating Factor 2.2 W/C b Single Pulse Avalanche Energy E 691 mJ AS Maximum Power Dissipation P 278 W D Operating Junction and Storage Temperature Range T , T -55 to +150 C J stg Drain-Source Voltage Slope T = 125 C 70 J dV/dt V/ns d Reverse Diode dV/dt 50 c Soldering Recommendations (Peak Temperature) for 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature. b. V = 50 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 7 A. DD J g AS c. 1.6 mm from case. d. I I , dI/dt = 900 A/s, starting T = 25 C. SD D J S17-0295-Rev. C, 27-Feb-17 Document Number: 91593 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SiHB33N60EF www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP.MAX.UNIT Maximum Junction-to-Ambient R -62 thJA C/W Maximum Junction-to-Case (Drain) R -0.45 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 600 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.72 - V/C DS DS J D Gate-Source Threshold Voltage (N) V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-Source Leakage I GSS V = 30 V - - 1 A GS V = 480 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 480 V, V = 0 V, T = 125 C - - 500 DS GS J Drain-Source On-State Resistance R V = 10 V I = 16.5 A - 0.085 0.098 DS(on) GS D a Forward Transconductance g V = 30 V, I = 16.5 A - 12 - S fs DS D Dynamic Input Capacitance C - 3454 - V = 0 V, iss GS Output Capacitance C -V = 100 V, 154- oss DS Reverse Transfer Capacitance C -8f = 1 MHz - rss pF Effective Output Capacitance, Energy C - 121 - o(er) b Related V = 0 V, V = 0 V to 480 V GS DS Effective Output Capacitance, Time C - 437 - c o(tr) Related Total Gate Charge Q - 103 155 g Gate-Source Charge Q -2V = 10 V I = 16.5 A, V = 480 V 2- nC gs GS D DS Gate-Drain Charge Q -43- gd Turn-On Delay Time t -28 56 d(on) Rise Time t -43 86 r V = 480 V, I = 16.5 A DD D ns R = 9.1 , V = 10 V Turn-Off Delay Time t -g GS 161242 d(off) Fall Time t -4896 f f = 1 MHz, open drain 0.2 0.5 1.0 Gate Input Resistance R g Drain-Source Body Diode Characteristics D MOSFET symbol Continuous Source-Drain Diode Current I -- 33 S showing the A G integral reverse Pulsed Diode Forward Current I S - 100 - SM p - n junction diode Diode Forward Voltage V T = 25 C, I = 16.5 A, V = 0 V - 0.9 1.2 V SD J S GS Reverse Recovery Time t - 162 324 ns rr T = 25 C, I = I = 16.5 A, J F S Reverse Recovery Charge Q -1.0 2.0 C rr dI/dt = 100 A/s, V = 400 V R Reverse Recovery Current I -13 - A RRM Notes a. Repetitive rating pulse width limited by maximum junction temperature. b. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V . oss(er) oss DS DS c. C is a fixed capacitance that gives the charging time as C while V is rising from 0 % to 80 % V . oss(tr) oss DS DS S17-0295-Rev. C, 27-Feb-17 Document Number: 91593 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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