AUIRF6218S AUTOMOTIVE GRADE AUIRF6218L Features HEXFET Power MOSFET Advanced Planar Technology V -150V DSS Low On-Resistance P-Channel MOSFET R max. 150m DS(on) Dynamic dv/dt Rating 175C Operating Temperature I -27A D Fast Switching Fully Avalanche Rated D D Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * S S D G G Description 2 D Pak TO-262 Specifically designed for Automotive applications, this cellular design of AUIRF6218S AUIRF6218L HEXFET Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the G D S fast switching speed and ruggedized device design that HEXFET power Gate Drain Source MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. Standard Pack Base part number Package Type Orderable Part Number Form Quantity AUIRF6218L TO-262 Tube 50 AUIRF6218L Tube 50 AUIRF6218S 2 AUIRF6218S D -Pak Tape and Reel Left 800 AUIRF6218STRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V -27 D C GS I T = 100C Continuous Drain Current, V 10V -19 D C GS A I Pulsed Drain Current -110 DM P T = 25C Maximum Power Dissipation 250 D C W Linear Derating Factor 1.6 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy (Thermally Limited) 210 mJ AS I Avalanche Current -16 A AR dv/dt Peak Diode Recovery 8.2 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 0.61 R JC C/W Junction-to-Ambient ( PCB Mount, steady state) 40 R JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2017-10-10 AUIRF6218S/L Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage -150 V V = 0V, I = -250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient -0.17 V/C Reference to 25C, I = -1mA V / T (BR)DSS J D R Static Drain-to-Source On-Resistance 120 150 mV = -10V, I = -16A DS(on) GS D V Gate Threshold Voltage -3.0 -5.0 V V = V , I = -250A GS(th) DS GS D g Forward Trans conductance 11 S V = -50V, I = -16A fs DS D -25 V = -120V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS -250 V = -120V,V = 0V,T =150C DS GS J I Gate-to-Source Forward Leakage -100 V = -20V GS GSS nA Gate-to-Source Reverse Leakage 100 V = 20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q Total Gate Charge 71 110 I = -16A g D Q Gate-to-Source Charge 21 nC V = -120V gs DS Q Gate-to-Drain Charge 32 V = -10V gd GS t Turn-On Delay Time 21 V = -75V d(on) DD t Rise Time 70 I = -16A r D ns t Turn-Off Delay Time 35 R = 3.9 d(off) G t Fall Time 30 V = -10V f GS C Input Capacitance 2210 V = 0V iss GS C Output Capacitance 370 V = -25V oss DS = 1.0MHz C Reverse Transfer Capacitance 89 rss pF C Output Capacitance 2220 V = 0V,V = -1.0V, = 1.0MHz oss GS DS C Output Capacitance 170 V = 0V,V = -120V, = 1.0MHz oss GS DS C Effective Output Capacitance 340 V = 0V,V = 0V to -120V oss eff. GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I -27 S (Body Diode) showing the A Pulsed Source Current integral reverse I -110 SM (Body Diode) p-n junction diode. V Diode Forward Voltage -1.6 V T = 25C,I = -16A,V = 0V SD J S GS t Reverse Recovery Time 150 ns T = 25C ,I = -16A, V = -25V rr J F DD Q Reverse Recovery Charge 860 nC di/dt = 100A/s rr Notes: Repetitive rating pulse width limited by max. junction temperature. Starting T = 25C, L = 1.6mH, R = 25 , I = -17A. J G AS I -17A, di/dt 520A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 300s duty cycle 2%. R is measured at T of approximately 90C J When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 2 2017-10-10