StrongIRFET IRFS7434-7PPbF Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications V 40V D DSS Battery powered circuits Half-bridge and full-bridge topologies R 0.70m DS(on) typ. Synchronous rectifier applications G 1.0m max Resonant mode power supplies I 362A OR-ing and redundant power switches D (Silicon Limited) S DC/DC and AC/DC converters I 240A D (Package Limited) DC/AC Inverters Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free, RoHS Compliant G D S Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity Tube 50 IRFS7434-7PPbF 2 IRFS7434-7PPbF D Pak-7Pin Tape and Reel Left 800 IRFS7434TRL7PP 3.5 400 I = 100A Limited By Package D 350 3.0 300 2.5 250 2.0 200 T = 125C 1.5 J 150 1.0 100 T = 25C J 0.5 50 0.0 0 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 T , Case Temperature (C) C V Gate -to -Source Voltage (V) GS, Fig 2. Maximum Drain Current vs. Case Temperature Fig 1. Typical On-Resistance vs. Gate Voltage 1 www.irf.com 2014 International Rectifier Submit Datasheet Feedback November 19, 2014 R , Drain-to -Source On Resistance (m) DS(on) I , Drain Current (A) D IRFS7434-7PPbF Absolute Maximium Rating Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 362 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 229 D C GS A I T = 25C Continuous Drain Current, V 10V (Wire Bond Limited) 240 D C GS I Pulsed Drain Current 1300* DM P T = 25C Maximum Power Dissipation 245 W D C Linear Derating Factor 1.96 W/C V Gate-to-Source Voltage 20 V GS T Operating Junction and J -55 to + 150 T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Avalanche Characteristics E 384 Single Pulse Avalanche Energy AS (Thermally limited) mJ E Single Pulse Avalanche Energy 880 AS (Thermally limited) I Avalanche Current A AR See Fig 15, 16, 23a, 23b E Repetitive Avalanche Energy mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case R 0.51 C/W JC Junction-to-Ambient R 40 JA Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.03 V/C Reference to 25C, I = 1mA D (BR)DSS J 0.7 1.0 V = 10V, I = 100A GS D R Static Drain-to-Source On-Resistance m DS(on) 1.5 V = 6V, I = 50A GS D V Gate Threshold Voltage 2.2 3.0 3.9 V V = V , I = 250A GS(th) DS GS D 1.0 V =40 V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 150 V =40V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS R Gate Resistance 2.0 G Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 240A by source bonding technology. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating pulse width limited by max. junction temperature. Limited by T , starting T = 25C, L = 0.077mH, R = 50 , I = 100A, V =10V. Jmax J G AS GS I 100A, di/dt 969A/s, V V , T 150C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . oss oss DS DSS R is measured at T approximately 90C. J Limited by T , starting T = 25C, L = 1mH, R = 50 , I = 42A, V =10V. Jmax J G AS GS When mounted on 1 square PCB (FR-4 or G-10 Material). Please refer to AN-994 for more details: