X-On Electronics has gained recognition as a prominent supplier of NTE490 MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTE490 MOSFETs are a product manufactured by NTE. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTE490 NTE

NTE490 electronic component of NTE
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See Product Specifications
Part No.NTE490
Manufacturer: NTE
Category: MOSFETs
Description: Transistor: N-MOSFET; 60V; TO92
Datasheet: NTE490 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
4: USD 1.4025 ea
Line Total: USD 5.61 
Availability - 3
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ: 4  Multiples: 1
Pack Size: 1
Availability Price Quantity
3
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 4
Multiples : 1
4 : USD 1.4025
25 : USD 1.275
250 : USD 1.0312
500 : USD 1.015
1000 : USD 0.985
2500 : USD 0.9163
5000 : USD 0.9025
7500 : USD 0.88

   
Manufacturer
Product Category
Mounting
Case
Kind Of Channel
Type Of Transistor
Drain-Source Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE490 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE490 and other electronic components in the MOSFETs category and beyond.

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NTE490 MOSFET NCh, Enhancement Mode High Speed Switch TO92 Type Package Absolute Maximum Ratings: DrainSource Voltage, V .......................................................... 60V DS GateSource Voltage, V ......................................................... 20V GS Drain Current (Note 1), I ........................................................ 500mA D Total Device Dissipation (T = +25 C), P ......................................... 350mW A D Operating Junction Temperature Range, T .................................. 55 to +150 C J Storage Temperature Range, T .......................................... 55 to +150 C stg Note 1. The Power Dissipation of the package may result in a lower continuous drain current. Electrical Characteristics: (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics DrainSource Breakdown Voltage V V = 0, I = 100 A 60 90 V (BR)DSS GS D Gate Reverse Current I V = 15V, V = 0 0.01 10 nA GSS GS DS ON Characteristics (Note 2) Gate Threshold Voltage V V = V , I = 1mA 0.8 2.0 3.0 V GS(Th) DS GS D Static DrainSource ON Resistance r (on) V = 10V, I = 200mA 1.8 5.0 DS GS D Drain Cutoff Current I V = 25V, V = 0 0.5 A D(off) DS GS Forward Transconductance g V = 10V, I = 250mA 200 mmhos fs DS D SmallSignal Characteristics Input Capacitance C V = 10V, V = 0, f = 1MHz 60 pF iss DS GS Switching Characteristics TurnOn Time t I = 200mA 4 10 ns on D TurnOff Time t I = 200mA 4 10 ns off D Note 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. Rev. 1013D G S .135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min D G S .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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