NTE490 MOSFET NCh, Enhancement Mode High Speed Switch TO92 Type Package Absolute Maximum Ratings: DrainSource Voltage, V .......................................................... 60V DS GateSource Voltage, V ......................................................... 20V GS Drain Current (Note 1), I ........................................................ 500mA D Total Device Dissipation (T = +25 C), P ......................................... 350mW A D Operating Junction Temperature Range, T .................................. 55 to +150 C J Storage Temperature Range, T .......................................... 55 to +150 C stg Note 1. The Power Dissipation of the package may result in a lower continuous drain current. Electrical Characteristics: (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics DrainSource Breakdown Voltage V V = 0, I = 100 A 60 90 V (BR)DSS GS D Gate Reverse Current I V = 15V, V = 0 0.01 10 nA GSS GS DS ON Characteristics (Note 2) Gate Threshold Voltage V V = V , I = 1mA 0.8 2.0 3.0 V GS(Th) DS GS D Static DrainSource ON Resistance r (on) V = 10V, I = 200mA 1.8 5.0 DS GS D Drain Cutoff Current I V = 25V, V = 0 0.5 A D(off) DS GS Forward Transconductance g V = 10V, I = 250mA 200 mmhos fs DS D SmallSignal Characteristics Input Capacitance C V = 10V, V = 0, f = 1MHz 60 pF iss DS GS Switching Characteristics TurnOn Time t I = 200mA 4 10 ns on D TurnOff Time t I = 200mA 4 10 ns off D Note 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. Rev. 1013D G S .135 (3.45) Min .210 (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min D G S .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max